A behavioral model of a 1.8-V flash A/D converter based on device parameters

Mahbub Hasan; Huan Hsiang P. Shen; David R. Allee; Mike Pennell

doi:10.1109/43.822621

A behavioral model of a 1.8-V flash A/D converter based on device parameters

Mahbub Hasan, Huan Hsiang P. Shen, David R. Allee, Mike Pennell

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A behavioral model of a 1.8-V, 6-bit flash analog-to-digital converter has been developed based on device parameters using the gm/Id methodology. This approach eliminates the need for recharacterization of blocks when device sizes are changed. Furthermore, the performance can be predicted with input only from device and process simulators eliminating the need for a circuit simulator and associated model parameters, signal to noise plus distortion ratio and differential and integral nonlinearity are predicted and verified at lower resolution with a circuit simulator.

Original language	English (US)
Pages (from-to)	69-82
Number of pages	14
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	19
Issue number	1
DOIs	https://doi.org/10.1109/43.822621
State	Published - 2000
Externally published	Yes

Keywords

A/D converter
Behavioral model
Flash
Simulation

ASJC Scopus subject areas

Software
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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10.1109/43.822621

Cite this

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title = "A behavioral model of a 1.8-V flash A/D converter based on device parameters",

abstract = "A behavioral model of a 1.8-V, 6-bit flash analog-to-digital converter has been developed based on device parameters using the gm/Id methodology. This approach eliminates the need for recharacterization of blocks when device sizes are changed. Furthermore, the performance can be predicted with input only from device and process simulators eliminating the need for a circuit simulator and associated model parameters, signal to noise plus distortion ratio and differential and integral nonlinearity are predicted and verified at lower resolution with a circuit simulator.",

keywords = "A/D converter, Behavioral model, Flash, Simulation",

author = "Mahbub Hasan and Shen, {Huan Hsiang P.} and Allee, {David R.} and Mike Pennell",

note = "Funding Information: The authors would like to thank K. Andrews of Analogy, Inc., Beaverton, OR, for the Saber mixed-signal simulation tool. This work was carried out at the Center for Low Power Electronics which is supported by the National Science Foundation, the Department of Commerce of the State of Arizona, and companies in the microelectronics industry, including, Ambit, Analog Devices, Analogy, Burr Brown, Gain Technology, Intel, InterHDL, Microchip, Motorola, Raytheon, Rockwell, Texas Instruments, and Western Design.",

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AU - Allee, David R.

AU - Pennell, Mike

N1 - Funding Information: The authors would like to thank K. Andrews of Analogy, Inc., Beaverton, OR, for the Saber mixed-signal simulation tool. This work was carried out at the Center for Low Power Electronics which is supported by the National Science Foundation, the Department of Commerce of the State of Arizona, and companies in the microelectronics industry, including, Ambit, Analog Devices, Analogy, Burr Brown, Gain Technology, Intel, InterHDL, Microchip, Motorola, Raytheon, Rockwell, Texas Instruments, and Western Design.

PY - 2000

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N2 - A behavioral model of a 1.8-V, 6-bit flash analog-to-digital converter has been developed based on device parameters using the gm/Id methodology. This approach eliminates the need for recharacterization of blocks when device sizes are changed. Furthermore, the performance can be predicted with input only from device and process simulators eliminating the need for a circuit simulator and associated model parameters, signal to noise plus distortion ratio and differential and integral nonlinearity are predicted and verified at lower resolution with a circuit simulator.

AB - A behavioral model of a 1.8-V, 6-bit flash analog-to-digital converter has been developed based on device parameters using the gm/Id methodology. This approach eliminates the need for recharacterization of blocks when device sizes are changed. Furthermore, the performance can be predicted with input only from device and process simulators eliminating the need for a circuit simulator and associated model parameters, signal to noise plus distortion ratio and differential and integral nonlinearity are predicted and verified at lower resolution with a circuit simulator.

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A behavioral model of a 1.8-V flash A/D converter based on device parameters

Abstract

Keywords

ASJC Scopus subject areas

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