Abstract

We have developed a 2D diffusion-reaction simulator suitable for modeling CdTe solar cells that contain active defects. It utilizes a self-consistent numerical scheme in which the device is mapped onto a finite element mesh. To demonstrate its versatility, we apply the simulator to the problems of defect migration during the annealing process and the extraction of current-voltage characteristics and quantum efficiencies. Our simulator also includes grain boundaries which are known to play an important role in CdTe devices as they strongly affect the migration of defects such as chlorine (Cl).

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2127-2131
Number of pages5
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • CdTe
  • chlorine
  • grain boundaries
  • impurity diffusion
  • numerical simulation
  • photovoltaic cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Akis, R., Brinkman, D., Guo, D., Vasileska, D., & Ringhofer, C. (2016). A 2D diffusion-reaction CdTe solar cell simulator that includes active defects and grain boundaries. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2127-2131). [7750009] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750009