Abstract
We have developed a 2D diffusion-reaction simulator suitable for modeling CdTe solar cells that contain active defects. It utilizes a self-consistent numerical scheme in which the device is mapped onto a finite element mesh. To demonstrate its versatility, we apply the simulator to the problems of defect migration during the annealing process and the extraction of current-voltage characteristics and quantum efficiencies. Our simulator also includes grain boundaries which are known to play an important role in CdTe devices as they strongly affect the migration of defects such as chlorine (Cl).
Original language | English (US) |
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Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 2127-2131 |
Number of pages | 5 |
Volume | 2016-November |
ISBN (Electronic) | 9781509027248 |
DOIs | |
State | Published - Nov 18 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
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Country/Territory | United States |
City | Portland |
Period | 6/5/16 → 6/10/16 |
Keywords
- CdTe
- chlorine
- grain boundaries
- impurity diffusion
- numerical simulation
- photovoltaic cells
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering