TY - GEN
T1 - A 24-μW 11-bit 1-MS/s SAR ADC with a bidirectional single-side switching technique
AU - Chen, Long
AU - Sanyal, Arindam
AU - Ma, Ji
AU - Sun, Nan
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/31
Y1 - 2014/10/31
N2 - This paper presents a low-power SAR ADC with a bidirectional single-side (BSS) switching technique. It reduces the DAC reference power and the total number of unit capacitors by 86% and 75% respectively, compared to the conventional SAR switching technique. It also minimizes the DAC switch driving power as it has only 1 single-side switching event every comparison cycle. Unlike the existing monotonic switching technique that also has only 1 switching event, the comparator input common-mode voltage for the proposed technique does not converge to ground but to Vcm, and thus, obviates the need for a specially designed comparator. To further reduce power, a segmented common-centroid capacitor layout is developed to ensure good matching accuracy. An 11-bit prototype ADC fabricated in 0.18-μm 1P6M CMOS technology achieves an ENOB of 10.3 bits and an SFDR of 77 dB. Operating at 1 MS/s, it consumes only 24 μW from a 1V power supply, leading to a FOM of 19.9 fJ/conv-step.
AB - This paper presents a low-power SAR ADC with a bidirectional single-side (BSS) switching technique. It reduces the DAC reference power and the total number of unit capacitors by 86% and 75% respectively, compared to the conventional SAR switching technique. It also minimizes the DAC switch driving power as it has only 1 single-side switching event every comparison cycle. Unlike the existing monotonic switching technique that also has only 1 switching event, the comparator input common-mode voltage for the proposed technique does not converge to ground but to Vcm, and thus, obviates the need for a specially designed comparator. To further reduce power, a segmented common-centroid capacitor layout is developed to ensure good matching accuracy. An 11-bit prototype ADC fabricated in 0.18-μm 1P6M CMOS technology achieves an ENOB of 10.3 bits and an SFDR of 77 dB. Operating at 1 MS/s, it consumes only 24 μW from a 1V power supply, leading to a FOM of 19.9 fJ/conv-step.
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U2 - 10.1109/ESSCIRC.2014.6942061
DO - 10.1109/ESSCIRC.2014.6942061
M3 - Conference contribution
AN - SCOPUS:84909945956
T3 - European Solid-State Circuits Conference
SP - 219
EP - 222
BT - ESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference
A2 - Andreani, Pietro
A2 - Bevilacqua, Andrea
A2 - Meneghesso, Gaudenzio
PB - IEEE Computer Society
T2 - 40th European Solid-State Circuit Conference, ESSCIRC 2014
Y2 - 22 September 2014 through 26 September 2014
ER -