Abstract
This paper presents the development of a 1 MHz enhancement mode GaN (eGaN) FET based 4-switch buck-boost converter with bootstrap driver for automotive applications. Conventionally, with Si MOSFETs, it is difficult to optimize the efficiency of a 4-switch buck-boost converter since the high side switches need to switch at high frequency or completely conduct the output/input current in either buck or boost operation mode. GaN FET with much lower Figure of Merit provides the possibility to achieve high efficiency of 4-switch buck-boost converter at MHz switching frequency. This paper investigates the challenges of using bootstrap driver in MHz 4-switch buck-boost converter, and presents associated solutions. A 6-45Vin, 10V/7A, 1 MHz eGaN FET based 4-switch buck-boost converter is built and measured high conversion efficiency confirms the superior performance with GaN FET.
Original language | English (US) |
---|---|
Title of host publication | WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 365-370 |
Number of pages | 6 |
ISBN (Print) | 9781467378857 |
DOIs | |
State | Published - Dec 30 2015 |
Event | 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States Duration: Nov 2 2015 → Nov 4 2015 |
Other
Other | 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 |
---|---|
Country/Territory | United States |
City | Blacksburg |
Period | 11/2/15 → 11/4/15 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials