A 1 MHz eGaN FET based 4-switch buck-boost converter for automotive applications

Chenhao Nan, Tong Yao, Raja Ayyanar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

This paper presents the development of a 1 MHz enhancement mode GaN (eGaN) FET based 4-switch buck-boost converter with bootstrap driver for automotive applications. Conventionally, with Si MOSFETs, it is difficult to optimize the efficiency of a 4-switch buck-boost converter since the high side switches need to switch at high frequency or completely conduct the output/input current in either buck or boost operation mode. GaN FET with much lower Figure of Merit provides the possibility to achieve high efficiency of 4-switch buck-boost converter at MHz switching frequency. This paper investigates the challenges of using bootstrap driver in MHz 4-switch buck-boost converter, and presents associated solutions. A 6-45Vin, 10V/7A, 1 MHz eGaN FET based 4-switch buck-boost converter is built and measured high conversion efficiency confirms the superior performance with GaN FET.

Original languageEnglish (US)
Title of host publicationWiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages365-370
Number of pages6
ISBN (Print)9781467378857
DOIs
StatePublished - Dec 30 2015
Event3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States
Duration: Nov 2 2015Nov 4 2015

Other

Other3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
Country/TerritoryUnited States
CityBlacksburg
Period11/2/1511/4/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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