A 0.32-THz SiGe Imaging Array with Polarization Diversity

Zhuang Li; Bukun Qi; Xiaohui Zhang; Saeed Zeinolabedinzadeh; Lei Sang; John D. Cressler

doi:10.1109/TTHZ.2017.2787958

A 0.32-THz SiGe Imaging Array with Polarization Diversity

Zhuang Li, Bukun Qi, Xiaohui Zhang, Saeed Zeinolabedinzadeh, Lei Sang, John D. Cressler

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A 0.32-THz 7 × 7 SiGe HBT incoherent detector array with both horizontal and vertical polarization capability is implemented in 0.13-μm SiGe BiCMOS technology. The average responsivity of the detector is 2.7 and 2.49 kV/W from 316 to 324 GHz for the horizontal and vertical polarizations, respectively, with a corresponding noise equivalent power of 23.8 and 25.8 pW/√Hz at an IF of 78.125 kHz. The contrast of metallic objects with features below the diffraction limit is enhanced by utilizing this chip's polarization diversities.

Original language	English (US)
Pages (from-to)	215-223
Number of pages	9
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/TTHZ.2017.2787958
State	Published - Mar 2018
Externally published	Yes

Keywords

Dual polarization
THz imaging
imaging array
incoherent detector
silicon germanium (SiGe)
terahertz (THz)

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

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10.1109/TTHZ.2017.2787958

Cite this

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title = "A 0.32-THz SiGe Imaging Array with Polarization Diversity",

abstract = "A 0.32-THz 7 × 7 SiGe HBT incoherent detector array with both horizontal and vertical polarization capability is implemented in 0.13-μm SiGe BiCMOS technology. The average responsivity of the detector is 2.7 and 2.49 kV/W from 316 to 324 GHz for the horizontal and vertical polarizations, respectively, with a corresponding noise equivalent power of 23.8 and 25.8 pW/√Hz at an IF of 78.125 kHz. The contrast of metallic objects with features below the diffraction limit is enhanced by utilizing this chip's polarization diversities.",

keywords = "Dual polarization, THz imaging, imaging array, incoherent detector, silicon germanium (SiGe), terahertz (THz)",

author = "Zhuang Li and Bukun Qi and Xiaohui Zhang and Saeed Zeinolabedinzadeh and Lei Sang and Cressler, {John D.}",

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AU - Li, Zhuang

AU - Qi, Bukun

AU - Zhang, Xiaohui

AU - Zeinolabedinzadeh, Saeed

AU - Sang, Lei

AU - Cressler, John D.

PY - 2018/3

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AB - A 0.32-THz 7 × 7 SiGe HBT incoherent detector array with both horizontal and vertical polarization capability is implemented in 0.13-μm SiGe BiCMOS technology. The average responsivity of the detector is 2.7 and 2.49 kV/W from 316 to 324 GHz for the horizontal and vertical polarizations, respectively, with a corresponding noise equivalent power of 23.8 and 25.8 pW/√Hz at an IF of 78.125 kHz. The contrast of metallic objects with features below the diffraction limit is enhanced by utilizing this chip's polarization diversities.

KW - Dual polarization

KW - THz imaging

KW - imaging array

KW - incoherent detector

KW - silicon germanium (SiGe)

KW - terahertz (THz)

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A 0.32-THz SiGe Imaging Array with Polarization Diversity

Abstract

Keywords

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