A 0.32-THz SiGe Imaging Array with Polarization Diversity

Zhuang Li, Bukun Qi, Xiaohui Zhang, Saeed Zeinolabedinzadeh, Lei Sang, John D. Cressler

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A 0.32-THz 7 × 7 SiGe HBT incoherent detector array with both horizontal and vertical polarization capability is implemented in 0.13-μm SiGe BiCMOS technology. The average responsivity of the detector is 2.7 and 2.49 kV/W from 316 to 324 GHz for the horizontal and vertical polarizations, respectively, with a corresponding noise equivalent power of 23.8 and 25.8 pW/√Hz at an IF of 78.125 kHz. The contrast of metallic objects with features below the diffraction limit is enhanced by utilizing this chip's polarization diversities.

Original languageEnglish (US)
Pages (from-to)215-223
Number of pages9
JournalIEEE Transactions on Terahertz Science and Technology
Volume8
Issue number2
DOIs
StatePublished - Mar 2018
Externally publishedYes

Fingerprint

Polarization
Imaging techniques
polarization
Detectors
BiCMOS technology
detectors
Heterojunction bipolar transistors
Diffraction
chips
diffraction

Keywords

  • Dual polarization
  • imaging array
  • incoherent detector
  • silicon germanium (SiGe)
  • terahertz (THz)
  • THz imaging

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

A 0.32-THz SiGe Imaging Array with Polarization Diversity. / Li, Zhuang; Qi, Bukun; Zhang, Xiaohui; Zeinolabedinzadeh, Saeed; Sang, Lei; Cressler, John D.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 8, No. 2, 03.2018, p. 215-223.

Research output: Contribution to journalArticle

Li, Zhuang ; Qi, Bukun ; Zhang, Xiaohui ; Zeinolabedinzadeh, Saeed ; Sang, Lei ; Cressler, John D. / A 0.32-THz SiGe Imaging Array with Polarization Diversity. In: IEEE Transactions on Terahertz Science and Technology. 2018 ; Vol. 8, No. 2. pp. 215-223.
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