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Author

  • John Kouvetakis
3 Scopus citations
23 Scopus citations

Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si

Kouvetakis, J., Chizmeshya, A., Jiang, L., Watkins, T., Grzybowski, G., Beeler, R. T., Poweleit, C. & Menendez, J., Aug 28 2012, In : Chemistry of Materials. 24, 16, p. 3219-3230 12 p.

Research output: Contribution to journalArticle

9 Scopus citations
6 Scopus citations
5 Scopus citations

Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors

Chizmeshya, A., Kouvetakis, J., Grzybowski, G., Beeler, R. & Menendez, J., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 623-634 12 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanosynthesis routes to new tetrahedral crystalline solids: Silicon-like Si3AlP

Watkins, T., Chizmeshya, A., Jiang, L., Smith, D., Beeler, R. T., Grzybowski, G., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Oct 12 2011, In : Journal of the American Chemical Society. 133, 40, p. 16212-16218 7 p.

Research output: Contribution to journalArticle

24 Scopus citations

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 1 2013, In : Semiconductor Science and Technology. 28, 10, 105001.

Research output: Contribution to journalArticle

26 Scopus citations

Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Kouvetakis, J. & Menendez, J., Aug 13 2012, In : Applied Physics Letters. 101, 7, 072105.

Research output: Contribution to journalArticle

80 Scopus citations
11 Scopus citations
42 Scopus citations

Non-radiative recombination in Ge1-ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Gallagher, J. D., Senaratne, C. L., Xu, C., Sims, P., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Jun 28 2015, In : Journal of Applied Physics. 117, 24, 245704.

Research output: Contribution to journalArticle

17 Scopus citations

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J. & Menendez, J., Sep 5 2018, IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., p. 35-36 2 p. 8456690

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Harris, T. R., Yeo, Y. K., Ryu, M. Y., Beeler, R. T. & Kouvetakis, J., Sep 14 2014, In : Journal of Applied Physics. 116, 10, 103502.

Research output: Contribution to journalArticle

15 Scopus citations

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge

Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In : Physical Review Letters. 118, 26, 267402.

Research output: Contribution to journalArticle

5 Scopus citations

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 1 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Optical properties of Ge1x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm

Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Aug 12 2013, In : Applied Physics Letters. 103, 7, 072111.

Research output: Contribution to journalArticle

18 Scopus citations

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journalArticle

7 Scopus citations

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Grzybowski, G., Jiang, L., Mathews, J., Roucka, R., Xu, C., Beeler, R. T., Kouvetakis, J. & Menendez, J., Oct 24 2011, In : Applied Physics Letters. 99, 17, 171910.

Research output: Contribution to journalArticle

30 Scopus citations

Radiation-induced electron and hole traps in Ge1 -x Sn x (x = 0-0.094)

Hogsed, M., Choe, K., Miguel, N., Wang, B. & Kouvetakis, J., Feb 14 2020, In : Journal of Applied Physics. 127, 6, 065708.

Research output: Contribution to journalArticle

Open Access

Rational design of monocrystalline (InP)yGe5-2y/Ge/ Si(100) semiconductors: Synthesis and optical properties

Sims, P. E., Chizmeshya, A., Jiang, L., Beeler, R. T., Poweleit, C. D., Gallagher, J., Smith, D., Menendez, J. & Kouvetakis, J., Aug 21 2013, In : Journal of the American Chemical Society. 135, 33, p. 12388-12399 12 p.

Research output: Contribution to journalArticle

2 Scopus citations

Single-defect hexapole mode GeSn photonic crystal laser: Fabrication and simulation

Bao, S., Qiu, H., Kim, Y., Lin, Y., Ryu, H. Y., Ryu, M. Y., Yeo, Y. K., Kouvetakis, J., Fitzgerald, E., Wang, H., Nam, D. & Tan, C. S., Oct 25 2017, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

Xu, C., Ringwala, D., Wang, D., Liu, L., Poweleit, C. D., Chang, S. L. Y., Zhuang, H. L., Menéndez, J. & Kouvetakis, J., Jan 1 2019, (Accepted/In press) In : Chemistry of Materials.

Research output: Contribution to journalArticle

Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices

Beeler, R. T., Grzybowski, G. J., Roucka, R., Jiang, L., Mathews, J., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., Oct 25 2011, In : Chemistry of Materials. 23, 20, p. 4480-4486 7 p.

Research output: Contribution to journalArticle

14 Scopus citations

Synthesis and optical properties of (GaAs)yGe5-2 y alloys assembled from molecular building blocks

Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In : Applied Physics Letters. 111, 12, 122101.

Research output: Contribution to journalArticle

2 Scopus citations

Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices

Xu, C., Beeler, R. T., Jiang, L., Gallagher, J. D., Favaro, R., Menendez, J. & Kouvetakis, J., Apr 30 2014, In : Thin Solid Films. 557, p. 177-182 6 p.

Research output: Contribution to journalArticle

15 Scopus citations

Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100)

Grzybowski, G., Watkins, T., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., Jun 26 2012, In : Chemistry of Materials. 24, 12, p. 2347-2355 9 p.

Research output: Contribution to journalArticle

9 Scopus citations

Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

Kouvetakis, J., Beeler, R. & Menendez, J., 2012, Information Optoelectronics, Nanofabrication and Testing, IONT 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In : ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.

Research output: Contribution to journalArticle

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Nov 1 2017, In : Applied Surface Science. 421, p. 905-912 8 p.

Research output: Contribution to journalArticle

7 Scopus citations

Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys

Bagchi, S., Poweleit, C. D., Beeler, R. T., Kouvetakis, J. & Menendez, J., Nov 2 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 19, 193201.

Research output: Contribution to journalArticle

7 Scopus citations

Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

Jo, H. J., So, M. G., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Sep 30 2015, In : Thin Solid Films. 591, p. 295-300 6 p.

Research output: Contribution to journalArticle

8 Scopus citations

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Ryu, M. Y., Harris, T. R., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Apr 29 2013, In : Applied Physics Letters. 102, 17, 171908.

Research output: Contribution to journalArticle

51 Scopus citations

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journalArticle

Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Agha, I., Menendez, J. & Kouvetakis, J., 2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc., Vol. 75. p. 163-176 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journalArticle

8 Scopus citations

Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10)

Grzybowski, G., Jiang, L., Beeler, R. T., Watkins, T., Chizmeshya, A., Xu, C., Menendez, J. & Kouvetakis, J., May 8 2012, In : Chemistry of Materials. 24, 9, p. 1619-1628 10 p.

Research output: Contribution to journalArticle

29 Scopus citations