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  • John Kouvetakis
2020

Radiation-induced electron and hole traps in Ge1 -x Sn x (x = 0-0.094)

Hogsed, M., Choe, K., Miguel, N., Wang, B. & Kouvetakis, J., Feb 14 2020, In : Journal of Applied Physics. 127, 6, 065708.

Research output: Contribution to journalArticle

Open Access
2019

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

1 Scopus citations

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
6 Scopus citations

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Materials physics of GeSn-based semiconductor lasers

Menendez, J., Wallace, P. M., Xu, C., Senaratne, C. L., Gallagher, J. D. & Kouvetakis, J., Jan 1 2019, In : Materials Today: Proceedings. 14, p. 38-42 5 p.

Research output: Contribution to journalConference article

1 Scopus citations

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, S. L. Y., Poweleit, C. D., Kouvetakis, J. & Menéndez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

3 Scopus citations

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

Xu, C., Ringwala, D., Wang, D., Liu, L., Poweleit, C. D., Chang, S. L. Y., Zhuang, H. L., Menéndez, J. & Kouvetakis, J., Jan 1 2019, (Accepted/In press) In : Chemistry of Materials.

Research output: Contribution to journalArticle

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journalArticle

2018

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

3 Scopus citations

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journalArticle

1 Scopus citations

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J. & Menendez, J., Sep 5 2018, IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., p. 35-36 2 p. 8456690

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017
13 Scopus citations

Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journalArticle

6 Scopus citations

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge

Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In : Physical Review Letters. 118, 26, 267402.

Research output: Contribution to journalArticle

5 Scopus citations

Single-defect hexapole mode GeSn photonic crystal laser: Fabrication and simulation

Bao, S., Qiu, H., Kim, Y., Lin, Y., Ryu, H. Y., Ryu, M. Y., Yeo, Y. K., Kouvetakis, J., Fitzgerald, E., Wang, H., Nam, D. & Tan, C. S., Oct 25 2017, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Synthesis and optical properties of (GaAs)yGe5-2 y alloys assembled from molecular building blocks

Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In : Applied Physics Letters. 111, 12, 122101.

Research output: Contribution to journalArticle

2 Scopus citations

Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In : ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.

Research output: Contribution to journalArticle

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Nov 1 2017, In : Applied Surface Science. 421, p. 905-912 8 p.

Research output: Contribution to journalArticle

7 Scopus citations
2016

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

6 Scopus citations

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

19 Scopus citations
20 Scopus citations

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 1 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journalArticle

7 Scopus citations

Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Agha, I., Menendez, J. & Kouvetakis, J., 2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc., Vol. 75. p. 163-176 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journalArticle

8 Scopus citations
2015

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Xu, C., Gallagher, J. D., Senaratne, C. L., Sims, P. E., Kouvetakis, J. & Menendez, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 3-15 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journalArticle

10 Scopus citations

Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

Sims, P., Aoki, T., Favaro, R., Wallace, P., White, A., Xu, C., Menendez, J. & Kouvetakis, J., Apr 28 2015, In : Chemistry of Materials. 27, 8, p. 3030-3039 10 p.

Research output: Contribution to journalArticle

4 Scopus citations

Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 83-93 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J. & Kouvetakis, J., Jan 1 2015, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. Jagadish, C., Wang, Y. L., O'Dwyer, C., Hite, J. K., Ren, F., Jang, S., He, J. H., Douglas, E., Lynch, R. P. & Anderson, T. J. (eds.). 14 ed. Electrochemical Society Inc., p. 157-164 8 p. (ECS Transactions; vol. 69, no. 14).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Electroluminescence from Ge1-ySny diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journalArticle

8 Scopus citations

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journalArticle

39 Scopus citations

Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications

Gallagher, J. D., Senaratne, C. L., Xu, C., Wallace, P. M., Menendez, J. & Kouvetakis, J., Jan 1 2015, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. Jagadish, C., Wang, Y. L., O'Dwyer, C., Hite, J. K., Ren, F., Jang, S., He, J. H., Douglas, E., Lynch, R. P. & Anderson, T. J. (eds.). 14 ed. Electrochemical Society Inc., p. 147-156 10 p. (ECS Transactions; vol. 69, no. 14).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journalArticle

17 Scopus citations

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journalArticle

7 Scopus citations
11 Scopus citations

Non-radiative recombination in Ge1-ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Gallagher, J. D., Senaratne, C. L., Xu, C., Sims, P., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Jun 28 2015, In : Journal of Applied Physics. 117, 24, 245704.

Research output: Contribution to journalArticle

17 Scopus citations

Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

Jo, H. J., So, M. G., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Sep 30 2015, In : Thin Solid Films. 591, p. 295-300 6 p.

Research output: Contribution to journalArticle

8 Scopus citations
2014

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journalArticle

30 Scopus citations

Atomic scale studies of structure and bonding in A1PSi3 alloys grown lattice-matched on Si(001)

Aoki, T., Jiang, L., Chizmeshya, A., Menendez, J., Kouvetakis, J. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 524-525 2 p.

Research output: Contribution to journalConference article

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journalArticle

59 Scopus citations
71 Scopus citations

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journalArticle

31 Scopus citations

Direct gap group IV semiconductors for next generation Si-based IR photonics

Kouvetakis, J., Gallagher, J. & Menendez, J., 2014, Materials Research Society Symposium Proceedings. Materials Research Society, Vol. 1666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1, p. S123-S128

Research output: Contribution to journalArticle

2 Scopus citations

Epitaxy of light emitting SiGeSn materials using novel precursors

Kouvetakis, J. & Menendez, J., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 143-144 2 p. 6874700. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journalArticle

17 Scopus citations

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journalArticle

25 Scopus citations