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13 Citations (Scopus)

(Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units

Watkins, T., Jiang, L., Xu, C., Chizmeshya, A., Smith, D., Menendez, J. & Kouvetakis, J., Jan 9 2012, In : Applied Physics Letters. 100, 2, 022101.

Research output: Contribution to journalArticle

ellipsometry
tuning
density functional theory
defects
interactions
30 Citations (Scopus)

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journalArticle

Light emission
Photoluminescence
Doping (additives)
Passivation
Photoluminescence spectroscopy
8 Citations (Scopus)
Propane
Butane
Predictive Model
Hydrides
SiGe
13 Citations (Scopus)

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2013, In : ECS Journal of Solid State Science and Technology. 2, 9

Research output: Contribution to journalArticle

Photodiodes
Optoelectronic devices
Diodes
Energy gap
Semiconductor materials
29 Citations (Scopus)

Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications

Beeler, R., Mathews, J., Weng, C., Tolle, J., Roucka, R., Chizmeshya, A., Juday, R., Bagchi, S., Menendez, J. & Kouvetakis, J., Dec 2010, In : Solar Energy Materials and Solar Cells. 94, 12, p. 2362-2370 9 p.

Research output: Contribution to journalArticle

Substrates
Costs
Defects
Metallorganic chemical vapor deposition
Hydrides
1 Citation (Scopus)

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

Photoluminescence
Energy gap
photoluminescence
Conduction bands
Temperature
39 Citations (Scopus)

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Roucka, R., Beeler, R., Mathews, J., Ryu, M. Y., Kee Yeo, Y., Menendez, J. & Kouvetakis, J., May 15 2011, In : Journal of Applied Physics. 109, 10, 103115.

Research output: Contribution to journalArticle

CMOS
detectors
engineers
temperature
augmentation
10 Citations (Scopus)

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journalArticle

Bending (forming)
Optical transitions
optical transition
critical point
Electronegativity
29 Citations (Scopus)
cryogenic temperature
dark current
epitaxy
photometers
optical measurement
58 Citations (Scopus)

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1 - ySny alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journalArticle

crossovers
photoluminescence
shift
coefficients
predictions
68 Citations (Scopus)
crossovers
Photoluminescence
Energy gap
photoluminescence
room temperature
4 Citations (Scopus)
Crystalline materials
Substitution reactions
Atoms
Diamond
Boron
5 Citations (Scopus)

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Ryu, M. Y., Yeo, Y. K., Ahoujja, M., Harris, T., Beeler, R. & Kouvetakis, J., Sep 24 2012, In : Applied Physics Letters. 101, 13, 131110.

Research output: Contribution to journalArticle

conduction
conductivity
electrical properties
Hall effect
temperature
1 Citation (Scopus)
Hydrides
hydrides
Heterojunctions
Lattice mismatch
routes
31 Citations (Scopus)

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journalArticle

Ternary alloys
Optoelectronic devices
Wavelength
Semiconductor materials
Hatches
12 Citations (Scopus)
backscattering
deviation
thin films
diffraction
x rays
6 Citations (Scopus)

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

photoluminescence
temperature
valleys
optoelectronic devices
chips
85 Citations (Scopus)

Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes

Roucka, R., Mathews, J., Beeler, R. T., Tolle, J., Kouvetakis, J. & Menendez, J., Feb 7 2011, In : Applied Physics Letters. 98, 6, 061109.

Research output: Contribution to journalArticle

p-i-n diodes
electroluminescence
closing
optical transition
valleys
19 Citations (Scopus)

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

photodiodes
diodes
fabrication
dark current
ternary alloys
144 Citations (Scopus)

Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon

Mathews, J., Beeler, R. T., Tolle, J., Xu, C., Roucka, R., Kouvetakis, J. & Menendez, J., Nov 29 2010, In : Applied Physics Letters. 97, 22, 221912.

Research output: Contribution to journalArticle

photoluminescence
silicon
wavelengths
fabrication
room temperature
52 Citations (Scopus)

Direct versus indirect optical recombination in Ge films grown on Si substrates

Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J. & Menendez, J., Nov 11 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 20, 205307.

Research output: Contribution to journalArticle

Substrates
Photoluminescence
deviation
photoluminescence
self absorption
5 Citations (Scopus)

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
germanium
photoelectronics
optical transition
microelectronics
ellipsometry
2 Citations (Scopus)

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

Deep level transient spectroscopy
Capacitance measurement
Voltage measurement
Ultrahigh vacuum
Photodiodes
2 Citations (Scopus)

Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1

Research output: Contribution to journalArticle

Electric properties
Substrates
Scattering
Lattice mismatch
Epitaxial films
8 Citations (Scopus)

Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journalArticle

electroluminescence
diodes
conduction bands
Brillouin zones
light emission
37 Citations (Scopus)

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journalArticle

electroluminescence
diodes
dark current
crossovers
trends

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Hydrogen
passivity
Semiconductor materials
Passivation
hydrogen plasma
20 Citations (Scopus)
Lattice constants
lattice parameters
Doping (additives)
antimony
rigidity

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

Hydrides
Doping (additives)
Fabrication
Boron
Chemical activation
17 Citations (Scopus)

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journalArticle

germanium
ionization
electrical resistivity
solubility
thermal energy
40 Citations (Scopus)

Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journalArticle

crossovers
interpolation
photoluminescence
predictions
spectroscopy
3 Citations (Scopus)
Hydrides
Isomers
Fabrication
Thermochemistry
Quantum chemistry
17 Citations (Scopus)

Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journalArticle

light emitting diodes
photonics
silicon
red shift
ternary alloys
25 Citations (Scopus)

Ge1- ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journalArticle

optical properties
microstructure
synthesis
vapor deposition
wafers
26 Citations (Scopus)

GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms

Beeler, R. T., Smith, D., Kouvetakis, J. & Menendez, J., 2012, In : IEEE Journal of Photovoltaics. 2, 4, p. 434-440 7 p., 6244831.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
Diodes
platforms
diodes
72 Citations (Scopus)

High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

Roucka, R., Mathews, J., Weng, C., Beeler, R., Tolle, J., Menendez, J. & Kouvetakis, J., 2011, In : IEEE Journal of Quantum Electronics. 47, 2, p. 213-222 10 p., 5689404.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
Diodes
Dark currents
chemistry

High resolution EELS study of Ge<inf>1-y</inf>Sn<inf>y</inf> and Ge<inf>1-x</inf>-ySi<inf>x</inf>Sn<inf>y</inf> alloys

Jiang, L., Aoki, T., Kouvetakis, J. & Menendez, J., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 520-521 2 p.

Research output: Contribution to journalArticle

Electron energy loss spectroscopy
high resolution
7 Citations (Scopus)

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journalArticle

Carrier concentration
prototypes
Doping (additives)
routes
analogs
1 Citation (Scopus)

Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journalArticle

Inductively coupled plasma
Buffer layers
Hydrogen
Spectroscopy
hydrogen
2 Citations (Scopus)

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, S. L. Y., Poweleit, C. D., Kouvetakis, J. & Menéndez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

optical properties
synthesis
atmospheric windows
low concentrations
lattice parameters
6 Citations (Scopus)

Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journalArticle

cryogenic temperature
Epitaxial growth
epitaxy
Chemical vapor deposition
Molecular beam epitaxy
3 Citations (Scopus)
Sulfur
Doping (additives)
Semiconductor materials
Carrier concentration
Poisons
23 Citations (Scopus)
Photodetectors
Structural properties
Optical properties
Hydrides
Equipment and Supplies
9 Citations (Scopus)

Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si

Kouvetakis, J., Chizmeshya, A., Jiang, L., Watkins, T., Grzybowski, G., Beeler, R. T., Poweleit, C. & Menendez, J., Aug 28 2012, In : Chemistry of Materials. 24, 16, p. 3219-3230 12 p.

Research output: Contribution to journalArticle

Diamond
Crystal lattices
Diamonds
Semiconductor materials
Crystal symmetry
6 Citations (Scopus)
Silicon
tetrahedrons
Structural properties
Optical properties
assembly
5 Citations (Scopus)
Nanostructures
Semiconductor materials
Experiments
Imaging techniques
Diamond
24 Citations (Scopus)

Nanosynthesis routes to new tetrahedral crystalline solids: Silicon-like Si3AlP

Watkins, T., Chizmeshya, A., Jiang, L., Smith, D., Beeler, R. T., Grzybowski, G., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Oct 12 2011, In : Journal of the American Chemical Society. 133, 40, p. 16212-16218 7 p.

Research output: Contribution to journalArticle

Semiconductors
Diamond
Silicon
Gases
Crystalline materials
26 Citations (Scopus)

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 2013, In : Semiconductor Science and Technology. 28, 10, 105001.

Research output: Contribution to journalArticle

Hydrides
hydrides
chemistry
Thermochemistry
Dark currents
78 Citations (Scopus)

Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Kouvetakis, J. & Menendez, J., Aug 13 2012, In : Applied Physics Letters. 101, 7, 072105.

Research output: Contribution to journalArticle

reaction kinetics
ultrahigh vacuum
thick films
stoichiometry
crossovers