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13 Citations (Scopus)

(Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units

Watkins, T., Jiang, L., Xu, C., Chizmeshya, A., Smith, D., Menendez, J. & Kouvetakis, J., Jan 9 2012, In : Applied Physics Letters. 100, 2, 022101.

Research output: Contribution to journalArticle

ellipsometry
tuning
density functional theory
defects
interactions
30 Citations (Scopus)

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journalArticle

Light emission
Photoluminescence
Doping (additives)
Passivation
Photoluminescence spectroscopy
8 Citations (Scopus)
Propane
Butane
Predictive Model
Hydrides
SiGe
13 Citations (Scopus)

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2013, In : ECS Journal of Solid State Science and Technology. 2, 9

Research output: Contribution to journalArticle

Photodiodes
Optoelectronic devices
Diodes
Energy gap
Semiconductor materials
3 Citations (Scopus)

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Xu, C., Gallagher, J. D., Senaratne, C. L., Sims, P. E., Kouvetakis, J. & Menendez, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 3-15 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spectroscopic ellipsometry
Doping (additives)
Secondary ion mass spectrometry
Carrier concentration
Infrared radiation
29 Citations (Scopus)

Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications

Beeler, R., Mathews, J., Weng, C., Tolle, J., Roucka, R., Chizmeshya, A., Juday, R., Bagchi, S., Menendez, J. & Kouvetakis, J., Dec 2010, In : Solar Energy Materials and Solar Cells. 94, 12, p. 2362-2370 9 p.

Research output: Contribution to journalArticle

Substrates
Costs
Defects
Metallorganic chemical vapor deposition
Hydrides
1 Citation (Scopus)

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

Photoluminescence
Energy gap
photoluminescence
Conduction bands
Temperature
39 Citations (Scopus)

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Roucka, R., Beeler, R., Mathews, J., Ryu, M. Y., Kee Yeo, Y., Menendez, J. & Kouvetakis, J., May 15 2011, In : Journal of Applied Physics. 109, 10, 103115.

Research output: Contribution to journalArticle

CMOS
detectors
engineers
temperature
augmentation
10 Citations (Scopus)

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journalArticle

Bending (forming)
Optical transitions
optical transition
critical point
Electronegativity
29 Citations (Scopus)
cryogenic temperature
dark current
epitaxy
photometers
optical measurement
58 Citations (Scopus)

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1 - ySny alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journalArticle

crossovers
photoluminescence
shift
coefficients
predictions
68 Citations (Scopus)
crossovers
Photoluminescence
Energy gap
photoluminescence
room temperature
4 Citations (Scopus)
Crystalline materials
Substitution reactions
Atoms
Diamond
Boron

Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 83-93 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical vapor deposition
Crystalline materials
Aberrations
Molecular beam epitaxy
Diamonds
5 Citations (Scopus)

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Ryu, M. Y., Yeo, Y. K., Ahoujja, M., Harris, T., Beeler, R. & Kouvetakis, J., Sep 24 2012, In : Applied Physics Letters. 101, 13, 131110.

Research output: Contribution to journalArticle

conduction
conductivity
electrical properties
Hall effect
temperature
1 Citation (Scopus)
Hydrides
hydrides
Heterojunctions
Lattice mismatch
routes
31 Citations (Scopus)

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journalArticle

Ternary alloys
Optoelectronic devices
Wavelength
Semiconductor materials
Hatches
12 Citations (Scopus)
backscattering
deviation
thin films
diffraction
x rays
6 Citations (Scopus)

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

photoluminescence
temperature
valleys
optoelectronic devices
chips
85 Citations (Scopus)

Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes

Roucka, R., Mathews, J., Beeler, R. T., Tolle, J., Kouvetakis, J. & Menendez, J., Feb 7 2011, In : Applied Physics Letters. 98, 6, 061109.

Research output: Contribution to journalArticle

p-i-n diodes
electroluminescence
closing
optical transition
valleys
19 Citations (Scopus)

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

photodiodes
diodes
fabrication
dark current
ternary alloys

Direct gap group IV semiconductors for next generation Si-based IR photonics

Kouvetakis, J., Gallagher, J. & Menendez, J., 2014, Materials Research Society Symposium Proceedings. Materials Research Society, Vol. 1666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonics
photonics
Semiconductor materials
Photoluminescence
Energy gap

Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys

Roucka, R., Mathews, J., Menendez, J. & Kouvetakis, J., 2011, IEEE International Conference on Group IV Photonics GFP. p. 214-216 3 p. 6053767

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electroluminescence
Photoluminescence
144 Citations (Scopus)

Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon

Mathews, J., Beeler, R. T., Tolle, J., Xu, C., Roucka, R., Kouvetakis, J. & Menendez, J., Nov 29 2010, In : Applied Physics Letters. 97, 22, 221912.

Research output: Contribution to journalArticle

photoluminescence
silicon
wavelengths
fabrication
room temperature
52 Citations (Scopus)

Direct versus indirect optical recombination in Ge films grown on Si substrates

Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J. & Menendez, J., Nov 11 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 20, 205307.

Research output: Contribution to journalArticle

Substrates
Photoluminescence
deviation
photoluminescence
self absorption
5 Citations (Scopus)

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
germanium
photoelectronics
optical transition
microelectronics
ellipsometry
1 Citation (Scopus)

Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 157-164 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electroluminescence
Photoluminescence
Doping (additives)
Photodiodes
Chemical analysis
2 Citations (Scopus)

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

Deep level transient spectroscopy
Capacitance measurement
Voltage measurement
Ultrahigh vacuum
Photodiodes
2 Citations (Scopus)

Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1

Research output: Contribution to journalArticle

Electric properties
Substrates
Scattering
Lattice mismatch
Epitaxial films
8 Citations (Scopus)

Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journalArticle

electroluminescence
diodes
conduction bands
Brillouin zones
light emission
37 Citations (Scopus)

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journalArticle

electroluminescence
diodes
dark current
crossovers
trends

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Hydrogen
passivity
Semiconductor materials
Passivation
hydrogen plasma

Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications

Gallagher, J. D., Senaratne, C. L., Xu, C., Wallace, P. M., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 147-156 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonics
Light emitting diodes
Electroluminescence
Fabrication
Dark currents

Epitaxy of light emitting SiGeSn materials using novel precursors

Kouvetakis, J. & Menendez, J., 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 143-144 2 p. 6874700

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Optoelectronic devices
20 Citations (Scopus)
Lattice constants
lattice parameters
Doping (additives)
antimony
rigidity

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

Hydrides
Doping (additives)
Fabrication
Boron
Chemical activation
17 Citations (Scopus)

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journalArticle

germanium
ionization
electrical resistivity
solubility
thermal energy
40 Citations (Scopus)

Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journalArticle

crossovers
interpolation
photoluminescence
predictions
spectroscopy
3 Citations (Scopus)
Hydrides
Isomers
Fabrication
Thermochemistry
Quantum chemistry
17 Citations (Scopus)

Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journalArticle

light emitting diodes
photonics
silicon
red shift
ternary alloys
25 Citations (Scopus)

Ge1- ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journalArticle

optical properties
microstructure
synthesis
vapor deposition
wafers
2 Citations (Scopus)

Germanium p-i-n photodiode on silicon for integrated photonic applications

Mathews, J., Roucka, R., Weng, C., Tolle, J., Menendez, J. & Kouvetakis, J., 2010, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7606. 76061L

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium
Photodiode
Silicon
Photodiodes
Photonics
26 Citations (Scopus)

GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms

Beeler, R. T., Smith, D., Kouvetakis, J. & Menendez, J., 2012, In : IEEE Journal of Photovoltaics. 2, 4, p. 434-440 7 p., 6244831.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
Diodes
platforms
diodes
2 Citations (Scopus)

GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 865-874 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bending (forming)
Ultrahigh vacuum
Chemical vapor deposition
Photoluminescence
Energy gap

Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy

Beeler, R., Weng, C., Tolle, J., Roucka, R., Mathews, J., Ahmari, D. A., Menendez, J. & Kouvetakis, J., 2010, ECS Transactions. 6 ed. Vol. 33. p. 941-950 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical properties
Substrates
Cathodoluminescence
Metallorganic chemical vapor deposition
Buffer layers
3 Citations (Scopus)

High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys

Beeler, R. T., Menendez, J., Smith, D. & Kouvetakis, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 591-599 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ternary alloys
Photodiodes
Optoelectronic devices
Lattice mismatch
Epilayers
72 Citations (Scopus)

High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

Roucka, R., Mathews, J., Weng, C., Beeler, R., Tolle, J., Menendez, J. & Kouvetakis, J., 2011, In : IEEE Journal of Quantum Electronics. 47, 2, p. 213-222 10 p., 5689404.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
Diodes
Dark currents
chemistry

High resolution EELS study of Ge<inf>1-y</inf>Sn<inf>y</inf> and Ge<inf>1-x</inf>-ySi<inf>x</inf>Sn<inf>y</inf> alloys

Jiang, L., Aoki, T., Kouvetakis, J. & Menendez, J., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 520-521 2 p.

Research output: Contribution to journalArticle

Electron energy loss spectroscopy
high resolution
7 Citations (Scopus)

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journalArticle

Carrier concentration
prototypes
Doping (additives)
routes
analogs