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Author

  • John Kouvetakis
2010

Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications

Beeler, R., Mathews, J., Weng, C., Tolle, J., Roucka, R., Chizmeshya, A., Juday, R., Bagchi, S., Menendez, J. & Kouvetakis, J., Dec 1 2010, In : Solar Energy Materials and Solar Cells. 94, 12, p. 2362-2370 9 p.

Research output: Contribution to journalArticle

30 Scopus citations

Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon

Mathews, J., Beeler, R. T., Tolle, J., Xu, C., Roucka, R., Kouvetakis, J. & Menendez, J., Nov 29 2010, In : Applied Physics Letters. 97, 22, 221912.

Research output: Contribution to journalArticle

146 Scopus citations

Germanium p-i-n photodiode on silicon for integrated photonic applications

Mathews, J., Roucka, R., Weng, C., Tolle, J., Menendez, J. & Kouvetakis, J., May 6 2010, Silicon Photonics V. 76061L. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 7606).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy

Beeler, R., Weng, C., Tolle, J., Roucka, R., Mathews, J., Ahmari, D. A., Menendez, J. & Kouvetakis, J., Dec 1 2010, SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. p. 941-950 10 p. (ECS Transactions; vol. 33, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon

Mathews, J., Roucka, R., Weng, C., Beeler, R., Tolle, J., Menendez, J. & Kouvetakis, J., Dec 1 2010, SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. p. 765-773 9 p. (ECS Transactions; vol. 33, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Practical materials chemistry approaches for tuning optical and structural properties of group IV semiconductors and prototype photonic devices

Kouvetakis, J., Mathews, J., Roucka, R., Chizmeshya, A., Tolle, J. & Menendez, J., Oct 27 2010, In : IEEE Photonics Journal. 2, 6, p. 924-941 18 p., 5585646.

Research output: Contribution to journalArticle

23 Scopus citations

Practical routes to (SiH3)3P: Applications in group IV semiconductor activation and in group III-V molecular synthesis

Tice, J. B., Chizmeshya, A., Tolle, J., D'Costa, V. R., Menendez, J. & Kouvetakis, J., May 11 2010, In : Dalton Transactions. 39, 19, p. 4551-4558 8 p.

Research output: Contribution to journalArticle

14 Scopus citations

Practical strategies for tuning optical, structural and thermal properties in group IV ternary semiconductors

Chizmeshya, A. & Kouvetakis, J., Dec 1 2010, SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. p. 717-728 12 p. (ECS Transactions; vol. 33, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Si-Ge-based oxynitrides: From molecules to solids

Weng, C., Kouvetakis, J. & Chizmeshya, A., Jul 13 2010, In : Chemistry of Materials. 22, 13, p. 3884-3899 16 p.

Research output: Contribution to journalArticle

6 Scopus citations

Si-Ge-Sn technologies: From molecules to materials to prototype devices

Kouvetakis, J., Tolle, J., Mathews, J., Roucka, R. & Menendez, J., Dec 1 2010, SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. p. 615-628 14 p. (ECS Transactions; vol. 33, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms

Xie, J., Chizmeshya, A., Tolle, J., Dcosta, V. R., Menendez, J. & Kouvetakis, J., Jun 22 2010, In : Chemistry of Materials. 22, 12, p. 3779-3789 11 p.

Research output: Contribution to journalArticle

41 Scopus citations

Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations

Tice, J. B., D'Costa, V. R., Grzybowski, G., Chizmeshya, A., Tolle, J., Menendez, J. & Kouvetakis, J., Sep 28 2010, In : Chemistry of Materials. 22, 18, p. 5296-5305 10 p.

Research output: Contribution to journalArticle

1 Scopus citations

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

D'Costa, V. R., Fang, Y. Y., Tolle, J., Kouvetakis, J. & Menendez, J., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2531-2537 7 p.

Research output: Contribution to journalArticle

57 Scopus citations

Thermal expansivity of Ge1-y sny alloys

Roucka, R., Fang, Y. Y., Kouvetakis, J., Chizmeshya, A. & Menendez, J., Jun 29 2010, In : Physical Review B - Condensed Matter and Materials Physics. 81, 24, 245214.

Research output: Contribution to journalArticle

17 Scopus citations
2011
8 Scopus citations

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Roucka, R., Beeler, R., Mathews, J., Ryu, M. Y., Kee Yeo, Y., Menendez, J. & Kouvetakis, J., May 15 2011, In : Journal of Applied Physics. 109, 10, 103115.

Research output: Contribution to journalArticle

39 Scopus citations
1 Scopus citations

Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes

Roucka, R., Mathews, J., Beeler, R. T., Tolle, J., Kouvetakis, J. & Menendez, J., Feb 7 2011, In : Applied Physics Letters. 98, 6, 061109.

Research output: Contribution to journalArticle

87 Scopus citations

Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys

Roucka, R., Mathews, J., Menendez, J. & Kouvetakis, J., Nov 22 2011, 8th IEEE International Conference on Group IV Photonics, GFP 2011. p. 214-216 3 p. 6053767. (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Direct versus indirect optical recombination in Ge films grown on Si substrates

Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J. & Menendez, J., Nov 11 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 20, 205307.

Research output: Contribution to journalArticle

52 Scopus citations

High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

Roucka, R., Mathews, J., Weng, C., Beeler, R., Tolle, J., Menendez, J. & Kouvetakis, J., Jan 26 2011, In : IEEE Journal of Quantum Electronics. 47, 2, p. 213-222 10 p., 5689404.

Research output: Contribution to journalArticle

74 Scopus citations

Nanosynthesis routes to new tetrahedral crystalline solids: Silicon-like Si3AlP

Watkins, T., Chizmeshya, A., Jiang, L., Smith, D., Beeler, R. T., Grzybowski, G., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Oct 12 2011, In : Journal of the American Chemical Society. 133, 40, p. 16212-16218 7 p.

Research output: Contribution to journalArticle

24 Scopus citations
40 Scopus citations

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Grzybowski, G., Jiang, L., Mathews, J., Roucka, R., Xu, C., Beeler, R. T., Kouvetakis, J. & Menendez, J., Oct 24 2011, In : Applied Physics Letters. 99, 17, 171910.

Research output: Contribution to journalArticle

30 Scopus citations

Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices

Beeler, R. T., Grzybowski, G. J., Roucka, R., Jiang, L., Mathews, J., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., Oct 25 2011, In : Chemistry of Materials. 23, 20, p. 4480-4486 7 p.

Research output: Contribution to journalArticle

14 Scopus citations

Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys

Bagchi, S., Poweleit, C. D., Beeler, R. T., Kouvetakis, J. & Menendez, J., Nov 2 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 19, 193201.

Research output: Contribution to journalArticle

7 Scopus citations
2012

(Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units

Watkins, T., Jiang, L., Xu, C., Chizmeshya, A., Smith, D., Menendez, J. & Kouvetakis, J., Jan 9 2012, In : Applied Physics Letters. 100, 2, 022101.

Research output: Contribution to journalArticle

13 Scopus citations
29 Scopus citations

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Ryu, M. Y., Yeo, Y. K., Ahoujja, M., Harris, T., Beeler, R. & Kouvetakis, J., Sep 24 2012, In : Applied Physics Letters. 101, 13, 131110.

Research output: Contribution to journalArticle

6 Scopus citations

GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms

Beeler, R. T., Smith, D., Kouvetakis, J. & Menendez, J., Jul 27 2012, In : IEEE Journal of Photovoltaics. 2, 4, p. 434-440 7 p., 6244831.

Research output: Contribution to journalArticle

26 Scopus citations

GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 865-874 10 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys

Beeler, R. T., Menendez, J., Smith, D. & Kouvetakis, J., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 591-599 9 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations
23 Scopus citations

Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si

Kouvetakis, J., Chizmeshya, A., Jiang, L., Watkins, T., Grzybowski, G., Beeler, R. T., Poweleit, C. & Menendez, J., Aug 28 2012, In : Chemistry of Materials. 24, 16, p. 3219-3230 12 p.

Research output: Contribution to journalArticle

9 Scopus citations

Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors

Chizmeshya, A., Kouvetakis, J., Grzybowski, G., Beeler, R. & Menendez, J., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 623-634 12 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Kouvetakis, J. & Menendez, J., Aug 13 2012, In : Applied Physics Letters. 101, 7, 072105.

Research output: Contribution to journalArticle

78 Scopus citations

Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100)

Grzybowski, G., Watkins, T., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., Jun 26 2012, In : Chemistry of Materials. 24, 12, p. 2347-2355 9 p.

Research output: Contribution to journalArticle

9 Scopus citations

Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

Kouvetakis, J., Beeler, R. & Menendez, J., 2012, Information Optoelectronics, Nanofabrication and Testing, IONT 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10)

Grzybowski, G., Jiang, L., Beeler, R. T., Watkins, T., Chizmeshya, A., Xu, C., Menendez, J. & Kouvetakis, J., May 8 2012, In : Chemistry of Materials. 24, 9, p. 1619-1628 10 p.

Research output: Contribution to journalArticle

28 Scopus citations
2013

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., Nov 15 2013, In : ECS Journal of Solid State Science and Technology. 2, 9, p. Q172-Q177

Research output: Contribution to journalArticle

14 Scopus citations

Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journalArticle

41 Scopus citations
3 Scopus citations
6 Scopus citations

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 1 2013, In : Semiconductor Science and Technology. 28, 10, 105001.

Research output: Contribution to journalArticle

26 Scopus citations

Optical properties of Ge1x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm

Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Aug 12 2013, In : Applied Physics Letters. 103, 7, 072111.

Research output: Contribution to journalArticle

18 Scopus citations

Rational design of monocrystalline (InP)yGe5-2y/Ge/ Si(100) semiconductors: Synthesis and optical properties

Sims, P. E., Chizmeshya, A., Jiang, L., Beeler, R. T., Poweleit, C. D., Gallagher, J., Smith, D., Menendez, J. & Kouvetakis, J., Aug 21 2013, In : Journal of the American Chemical Society. 135, 33, p. 12388-12399 12 p.

Research output: Contribution to journalArticle

2 Scopus citations

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Ryu, M. Y., Harris, T. R., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Apr 29 2013, In : Applied Physics Letters. 102, 17, 171908.

Research output: Contribution to journalArticle

51 Scopus citations
2014

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journalArticle

30 Scopus citations

Atomic scale studies of structure and bonding in A1PSi3 alloys grown lattice-matched on Si(001)

Aoki, T., Jiang, L., Chizmeshya, A., Menendez, J., Kouvetakis, J. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 524-525 2 p.

Research output: Contribution to journalConference article