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2012
43 Citations (Scopus)

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Francesco Pecora, E., Zhang, W., Yu. Nikiforov, A., Zhou, L., Smith, D., Yin, J., Paiella, R., Dal Negro, L. & Moustakas, T. D., Feb 6 2012, In : Applied Physics Letters. 100, 6, 061111.

Research output: Contribution to journalArticle

quantum wells
optical pumping
room temperature
solid state lasers
nanoclusters
9 Citations (Scopus)

Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100)

Grzybowski, G., Watkins, T., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., Jun 26 2012, In : Chemistry of Materials. 24, 12, p. 2347-2355 9 p.

Research output: Contribution to journalArticle

Semiconductor materials
Atomic beams
Strain relaxation
Quantum chemistry
Diamond

The effects of device dimension, substrate temperature, and gate metallization on the reliability of AlGaN/GaN high electron mobility transistors

Ren, F., Pearton, S. J., Liu, L., Kang, T. S., Douglas, E. A., Chang, C. Y., Lo, C. F., Cullen, D. A., Zhou, L. & Smith, D., 2012, Materials Research Society Symposium Proceedings. Vol. 1396. p. 115-126 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Metallizing
high electron mobility transistors
Substrates
Degradation
11 Citations (Scopus)

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Johnson, M. R., Cullen, D. A., Liu, L., Sheng Kang, T., Ren, F., Chang, C. Y., Pearton, S. J., Jang, S., Johnson, W. J. & Smith, D., Nov 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 6, 062204.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Metals
Transmission electron microscopy
transmission electron microscopy
2011
2 Citations (Scopus)

Conduction electron scattering and spin-flipping at sputtered Al/Cu Interfaces

Sharma, A., Theodoropoulou, N., Loloee, R., Pratt, W. P., Bass, J., Zhang, J. M., Crimp, M. A., Cullen, D. A., Smith, D., Liu, K., Wang, S. & Xia, K., Mar 1 2011, In : Journal of Applied Physics. 109, 5, 053903.

Research output: Contribution to journalArticle

electron spin
conduction electrons
electron scattering
spin exchange
Permalloys (trademark)
1 Citation (Scopus)
Hydrides
hydrides
Heterojunctions
Lattice mismatch
routes
30 Citations (Scopus)

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Liu, L., Kang, T. S., Cullen, D. A., Zhou, L., Kim, J., Chang, C. Y., Douglas, E. A., Jang, S., Smith, D., Pearton, S. J., Johnson, W. J. & Ren, F., 2011, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29, 3, 032204.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
cycles
Piezoelectricity
Electric breakdown

Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

Liu, L., Kang, T. S., Cullen, D. A., Zhou, L., Kim, J., Chang, C. Y., Douglas, E. A., Jang, S., Smith, D., Pearton, S. J., Johnson, W. J. & Ren, F., 2011, ECS Transactions. 6 ed. Vol. 41. p. 41-49 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Piezoelectricity
Electric breakdown
Semiconductor materials
Transmission electron microscopy
35 Citations (Scopus)

Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Chang, C. Y., Douglas, E. A., Kim, J., Lu, L., Lo, C. F., Chu, B. H., Cheney, D. J., Gila, B. P., Ren, F., Via, G. D., Cullen, D. A., Zhou, L., Smith, D., Jang, S. & Pearton, S. J., Mar 2011, In : IEEE Transactions on Device and Materials Reliability. 11, 1, p. 187-193 7 p., 5678846.

Research output: Contribution to journalArticle

High electron mobility transistors
Electric fields
Degradation
Linear algebra
Bias voltage

Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress

Chang, C. Y., Douglas, E. A., Kim, J., Liu, L., Lo, C. F., Chu, B. H., Cheney, D. J., Gila, B. P., Ren, F., Via, G. D., Cullen, D. A., Zhou, L., Smith, D., Jang, S. & Pearton, S. J., 2011, ECS Transactions. 6 ed. Vol. 41. p. 89-100 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Electric fields
Degradation
Transmission electron microscopy
Imaging techniques
44 Citations (Scopus)

Endotaxial silicide nanowires: A review

Bennett, P., He, Z., Smith, D. & Ross, F. M., Oct 3 2011, In : Thin Solid Films. 519, 24, p. 8434-8440 7 p.

Research output: Contribution to journalArticle

Nanowires
nanowires
Lattice mismatch
Silicon
Rare earths
54 Citations (Scopus)

Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)

Posadas, A., Berg, M., Seo, H., De Lozanne, A., Demkov, A. A., Smith, D., Kirk, A. P., Zhernokletov, D. & Wallace, R. M., Jan 31 2011, In : Applied Physics Letters. 98, 5, 053104.

Research output: Contribution to journalArticle

ground state
oxides
silicon
molecular beam epitaxy
buffers
19 Citations (Scopus)

Epitaxial lateral overgrowth of non-polar GaN(1 1 0 0) on Si(1 1 2) patterned substrates by MOCVD

Izyumskaya, N., Liu, S. J., Avrutin, V., Ni, X. F., Wu, M., Özgr, Ü., Metzner, S., Bertram, F., Christen, J., Zhou, L., Smith, D. & Morkoç, H., Jan 1 2011, In : Journal of Crystal Growth. 314, 1, p. 129-135 7 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Substrates
habits
Stacking faults
4 Citations (Scopus)

Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation

Posadas, A., Dargis, R., Choi, M. R., Slepko, A., Demkov, A. A., Kim, J. J. & Smith, D., 2011, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29, 3, 03C131.

Research output: Contribution to journalArticle

Passivation
passivity
surface energy
Interfacial energy
Contact angle
32 Citations (Scopus)

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications

Fan, J., Ouyang, L., Liu, X., Ding, D., Furdyna, J. K., Smith, D. & Zhang, Y-H., May 15 2011, In : Journal of Crystal Growth. 323, 1, p. 127-131 5 p.

Research output: Contribution to journalArticle

optoelectronic devices
Optoelectronic devices
Epilayers
Materials properties
Substrates
11 Citations (Scopus)

Hard x-ray photoemission study of near-Heusler FexSi 1-x alloys

Gray, A. X., Karel, J., Minár, J., Bordel, C., Ebert, H., Braun, J., Ueda, S., Yamashita, Y., Ouyang, L., Smith, D., Kobayashi, K., Hellman, F. & Fadley, C. S., May 9 2011, In : Physical Review B - Condensed Matter and Materials Physics. 83, 19, 195112.

Research output: Contribution to journalArticle

Photoemission
Photoelectron spectroscopy
x ray spectroscopy
photoelectric emission
photoelectron spectroscopy
23 Citations (Scopus)

High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

Chabak, K. D., Walker, D. E., Johnson, M. R., Crespo, A., Dabiran, A. M., Smith, D., Wowchak, A. M., Tetlak, S. K., Kossler, M., Gillespie, J. K., Fitch, R. C. & Trejo, M., Dec 2011, In : IEEE Electron Device Letters. 32, 12, p. 1677-1679 3 p., 6032708.

Research output: Contribution to journalArticle

Gates (transistor)
Aluminum Oxide
Transconductance
High electron mobility transistors
Sapphire
8 Citations (Scopus)

Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition

Scott, R. C., Leedy, K. D., Bayraktaroglu, B., Look, D. C., Smith, D., Ding, D., Lu, X. & Zhang, Y-H., Apr 2011, In : Journal of Electronic Materials. 40, 4, p. 419-428 10 p.

Research output: Contribution to journalArticle

Pulsed laser deposition
pulsed laser deposition
Materials properties
Annealing
annealing
4 Citations (Scopus)

Insitu observations of endotaxial growth of CoSi2 nanowires on Si(110) using ultrahigh vacuum transmission electron microscopy

Bennett, P., Smith, D., He, Z., Reuter, M. C., Ellis, A. W. & Ross, F. M., Jul 29 2011, In : Nanotechnology. 22, 30, 305606.

Research output: Contribution to journalArticle

Ultrahigh vacuum
Nanowires
Transmission electron microscopy
Growth kinetics
Aspect ratio

Investigation of the main correlations between structural and physical propertiess of InAs quantum dots, embedded between strain-relief GaAsSb layers

Faleev, N., Ban, K. Y., Bremner, S., Smith, D. & Honsberg, C., 2011, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 474-479 6 p. 6185996

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum dots
Atoms
Crystals
Epitaxial layers
Dislocations (crystals)
13 Citations (Scopus)

Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Zhou, L., Smith, D., McCartney, M., Xu, T. & Moustakas, T. D., Sep 5 2011, In : Applied Physics Letters. 99, 10, 101905.

Research output: Contribution to journalArticle

wurtzite
holography
quantum dots
electric fields
profiles
8 Citations (Scopus)

Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

Zhao, W. F., Jacobs, R. N., Jaime-Vasquez, M., Bubulac, L. O. & Smith, D., Aug 2011, In : Journal of Electronic Materials. 40, 8, p. 1733-1737 5 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Epilayers
Stacking faults
14 Citations (Scopus)

Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (1 0 0) substrates

Ouyang, L., Fan, J., Wang, S., Lu, X., Zhang, Y. H., Liu, X., Furdyna, J. K. & Smith, D., Sep 1 2011, In : Journal of Crystal Growth. 330, 1, p. 30-34 5 p.

Research output: Contribution to journalArticle

Epilayers
Dislocations (crystals)
Burgers vector
Edge dislocations
Electrons
24 Citations (Scopus)

Nanosynthesis routes to new tetrahedral crystalline solids: Silicon-like Si3AlP

Watkins, T., Chizmeshya, A., Jiang, L., Smith, D., Beeler, R. T., Grzybowski, G., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Oct 12 2011, In : Journal of the American Chemical Society. 133, 40, p. 16212-16218 7 p.

Research output: Contribution to journalArticle

Semiconductors
Diamond
Silicon
Gases
Crystalline materials
17 Citations (Scopus)

Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

Yang, H., Yang, S. H., Qi, D. C., Rusydi, A., Kawai, H., Saeys, M., Leo, T., Smith, D. & Parkin, S. S. P., Apr 19 2011, In : Physical Review Letters. 106, 16, 167201.

Research output: Contribution to journalArticle

dichroism
tunnels
magnetization
electrodes
tunnel junctions
40 Citations (Scopus)

Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography

Li, L., Smith, D., Dailey, E., Madras, P., Drucker, J. & McCartney, M., Feb 9 2011, In : Nano Letters. 11, 2, p. 493-497 5 p.

Research output: Contribution to journalArticle

Electron holography
holography
Nanowires
nanowires
electrons
7 Citations (Scopus)

Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates

Izyumskaya, N., Liu, S. J., Okur, S., Wu, M., Avrutin, V., Özgür, Ü., Metzner, S., Bertram, F., Christen, J., Zhou, L., Smith, D. & Morkoç, H., 2011, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7939. 79391W

Research output: Chapter in Book/Report/Conference proceedingConference contribution

MOCVD
Ammonia
Metallorganic chemical vapor deposition
Facet
Optical Properties
1 Citation (Scopus)

Shape transition and migration of TiSi2 nanostructures embedded in a Si matrix

Sunda-Meya, A., Smith, D. & Nemanich, R., Nov 1 2011, In : Journal of Applied Physics. 110, 9, 094304.

Research output: Contribution to journalArticle

matrices
surface energy
surface layers
solid state
thermodynamics
14 Citations (Scopus)

Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0)

Posadas, A., Berg, M., Seo, H., Smith, D., Kirk, A. P., Zhernokletov, D., Wallace, R. M., De Lozanne, A. & Demkov, A. A., Jul 2011, In : Microelectronic Engineering. 88, 7, p. 1444-1447 4 p.

Research output: Contribution to journalArticle

Ferromagnetism
Buffer layers
ferromagnetism
Silicon
Molecular beam epitaxy
24 Citations (Scopus)

Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition

Steenbergen, E. H., Huang, Y., Ryou, J. H., Ouyang, L., Li, J. J., Smith, D., Dupuis, R. D. & Zhang, Y. H., Aug 15 2011, In : Applied Physics Letters. 99, 7, 071111.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
superlattices
spectral sensitivity
periodic variations
crystallinity

Structural characterization of III-nitride materials and devices

Smith, D., Zhou, L. & Moustakas, T. D., 2011, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7945. 79451E

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nitrides
Semiconductor quantum wells
Semiconductor quantum dots
nitrides
Electron microscopes
57 Citations (Scopus)

Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Liu, X., Smith, D., Fan, J., Zhang, Y. H., Cao, H., Chen, Y. P., Leiner, J., Kirby, B. J., Dobrowolska, M. & Furdyna, J. K., Oct 24 2011, In : Applied Physics Letters. 99, 17, 171903.

Research output: Contribution to journalArticle

molecular beam epitaxy
insulators
transmission electron microscopy
symmetry
thin films
1 Citation (Scopus)

Study of uniformity of high performance AlInN HEMT with ultra-thin barrier

Gao, X., Gorka, D., Saunier, P., Ketterson, A., Zhou, L., Smith, D. & Guo, S., Jul 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 7-8, p. 2081-2085 5 p.

Research output: Contribution to journalArticle

high electron mobility transistors
depletion
14 Citations (Scopus)

Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices

Beeler, R. T., Grzybowski, G. J., Roucka, R., Jiang, L., Mathews, J., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., Oct 25 2011, In : Chemistry of Materials. 23, 20, p. 4480-4486 7 p.

Research output: Contribution to journalArticle

Materials properties
Photoluminescence
Chemical vapor deposition
Dark currents
Photodetectors

Three-step deposition method for improvement of the dielectric properties of BST thin films

Liu, H., Avrutin, V., Zhu, C., Leach, J. H., Rowe, E., Zhou, L., Smith, D., Özgür, Ü. & Morkoç, H., 2011, Materials Research Society Symposium Proceedings. Vol. 1397. p. 38-43 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dielectric properties
dielectric properties
interlayers
Thin films
thin films
2 Citations (Scopus)

Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates

Liu, X., Smith, D., Fan, J., Zhang, Y-H., Cao, H., Chen, Y. P., Kirby, B. J., Sun, N., Ruggiero, S. T., Leiner, J., Pimpinella, R. E., Hagmann, J., Tivakornsasithorn, K., Dobrowolska, M. & Furdyna, J. K., 2011, AIP Conference Proceedings. Vol. 1416. p. 105-108 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

molecular beam epitaxy
insulators
high energy electrons
electron diffraction
Raman spectroscopy
2010
11 Citations (Scopus)

Applications of TEM imaging, analysis and electron holography to III-nitride HEMT devices

Smith, D., Cullen, D. A., Zhou, L. & McCartney, M., Sep 2010, In : Microelectronics Reliability. 50, 9-11, p. 1514-1519 6 p.

Research output: Contribution to journalArticle

Electron holography
High electron mobility transistors
high electron mobility transistors
Nitrides
holography
12 Citations (Scopus)

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

Leach, J. H., Ni, X., Li, X., Wu, M., Özgür, U., Morko̧, H., Zhou, L., Cullen, D. A., Smith, D., Cheng, H., Kurdak, Ç., Meyer, J. R. & Vurgaftman, I., Apr 15 2010, In : Journal of Applied Physics. 107, 8, 083706.

Research output: Contribution to journalArticle

conduction
spacers
barrier layers
spectrum analysis
temperature gradients
89 Citations (Scopus)

Chemical vapor deposition synthesis of N-, P-, and Si-doped single-walled carbon nanotubes

Campos-Delgado, J., Maciel, I. O., Cullen, D. A., Smith, D., Jorio, A., Pimenta, M. A., Terrones, H. & Terrones, M., Mar 23 2010, In : ACS Nano. 4, 3, p. 1696-1702 7 p.

Research output: Contribution to journalArticle

Single-walled carbon nanotubes (SWCN)
Nanotubes
Chemical vapor deposition
nanotubes
carbon nanotubes
25 Citations (Scopus)

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

Zeng, L., Cao, J. X., Helgren, E., Karel, J., Arenholz, E., Ouyang, L., Smith, D., Wu, R. Q. & Hellman, F., Oct 14 2010, In : Physical Review B - Condensed Matter and Materials Physics. 82, 16, 165202.

Research output: Contribution to journalArticle

Magnetism
Electronic structure
Semiconductor materials
electronic structure
moments
14 Citations (Scopus)

Effects of vortex chirality and shape anisotropy on magnetization reversal of Co nanorings (invited)

he, K., Smith, D. & McCartney, M., May 1 2010, In : Journal of Applied Physics. 107, 9, p. 203 1 p.

Research output: Contribution to journalArticle

chirality
vortices
magnetization
anisotropy
slots

Experimental observation of sequential tunneling transport in GaN/AlGaN coupled quantum wells grown on a free-standing GaN substrate

Sudradjat, F., Driscoll, K., Liao, Y., Bhattacharyya, A., Thomidis, C., Zhou, L., Smith, D., Moustakas, T. D. & Paiella, R., 2010, Materials Research Society Symposium Proceedings. Vol. 1202. p. 99-104 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wells
quantum wells
Substrates
electric potential
Current voltage characteristics
11 Citations (Scopus)

Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

Chandrasekaran, R., Moustakas, T. D., Ozcan, A. S., Ludwig, K. F., Zhou, L. & Smith, D., Aug 15 2010, In : Journal of Applied Physics. 108, 4, 043501.

Research output: Contribution to journalArticle

sapphire
molecular beam epitaxy
kinetics
nitrides
buffers
2 Citations (Scopus)

Intersubband device applications of nitride quantum structures

Paiella, R., Driscoll, K., Li, Y., Liao, Y., Bhattacharyya, A., Thomidis, C., Zhou, L., Smith, D., Bellotti, E. & Moustakas, T. D., 2010, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7608. 76080N

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nitrides
Semiconductor quantum wells
nitrides
Quantum Well
Optical Switching
2 Citations (Scopus)

Intersubband transitions in GaN-based quantum wells: A new materials platform for infrared device applications

Paiella, R., Driscoll, K., Li, Y., Liao, Y., Bhattacharyya, A., Thomidis, C., Zhou, L., Smith, D. & Moustakas, T. D., 2010, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7808. 780807

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Infrared devices
Quantum Well
Semiconductor quantum wells
Infrared
platforms
1 Citation (Scopus)

Introduction: The Otto Scherzer special issue on aberration-corrected electron microscopy

Smith, D. & Dahmen, U., Aug 2010, In : Microscopy and Microanalysis. 16, 4, p. 365 1 p.

Research output: Contribution to journalArticle

Aberrations
Electron microscopy
aberration
electron microscopy
1 Citation (Scopus)

Microstructural characterization of CdTe surface passivation layers

Zhao, W. F., Cook, J., Parodos, T., Tobin, S. & Smith, D., Jul 2010, In : Journal of Electronic Materials. 39, 7, p. 924-929 6 p.

Research output: Contribution to journalArticle

Passivation
Molecular beam epitaxy
passivity
Epitaxial growth
Heterojunctions
4 Citations (Scopus)

Microstructure and field mapping of AlInN-based heterostructures and devices

Zhou, L., Cullen, D. A., McCartney, M., Leach, J. H., Fan, Q., Morkoç, H. & Smith, D., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2436-2439 4 p.

Research output: Contribution to journalArticle

microstructure
inclusions
holography
spacers
electron gas
13 Citations (Scopus)

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Zhou, L., McCartney, M., Smith, D., Mouti, A., Feltin, E., Carlin, J. F. & Grandjean, N., Oct 18 2010, In : Applied Physics Letters. 97, 16, 161902.

Research output: Contribution to journalArticle

apexes
quantum wells
defects
screws
vapor phase epitaxy
3 Citations (Scopus)

Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

Driscoll, K., Liao, Y., Bhattacharyya, A., Moustakas, T. D., Paiella, R., Zhou, L. & Smith, D., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2394-2397 4 p.

Research output: Contribution to journalArticle

quantum wells
transmission loss
infrared radiation
optical switching
fiber optics