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2013
14 Citations (Scopus)

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy

Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Magonov, S., Smith, D. & Honsberg, C., 2013, In : Journal of Crystal Growth. 365, p. 35-43 9 p.

Research output: Contribution to journalArticle

Epitaxial layers
Epitaxial growth
Molecular beam epitaxy
Atomic force microscopy
molecular beam epitaxy
9 Citations (Scopus)

Structure and morphology of polar and semi-polar pyramidal surfaces coating wurtzite ZnO micro-wires

Tang, D., Allard, L. F., Boley, A., Smith, D. & Liu, J., May 2013, In : Journal of Materials Science. 48, 10, p. 3857-3862 6 p.

Research output: Contribution to journalArticle

Wire
Coatings
Electron microscopy
Nanostructures
Evaporation
8 Citations (Scopus)

Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy

Shen, X. M., Li, H., Liu, S., Smith, D. & Zhang, Y-H., 2013, In : Journal of Crystal Growth. 381, p. 1-5 5 p.

Research output: Contribution to journalArticle

Superlattices
Growth temperature
Electron microscopy
superlattices
electron microscopy
6 Citations (Scopus)

TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

Kim, J. J., Jacobs, R. N., Almeida, L. A., Jaime-Vasquez, M., Nozaki, C. & Smith, D., Nov 2013, In : Journal of Electronic Materials. 42, 11, p. 3142-3147 6 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Transmission electron microscopy
transmission electron microscopy
Microanalysis
16 Citations (Scopus)

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Storm, D. F., Deen, D. A., Katzer, D. S., Meyer, D. J., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R. & Smith, D., 2013, In : Journal of Crystal Growth. 380, p. 14-17 4 p.

Research output: Contribution to journalArticle

Hall mobility
Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Plasmas
2012
13 Citations (Scopus)

(Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units

Watkins, T., Jiang, L., Xu, C., Chizmeshya, A., Smith, D., Menendez, J. & Kouvetakis, J., Jan 9 2012, In : Applied Physics Letters. 100, 2, 022101.

Research output: Contribution to journalArticle

ellipsometry
tuning
density functional theory
defects
interactions

193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors

Wang, X., Lo, C. F., Liu, L., Cuervo, C. V., Fan, R., Pearton, S. J., Gila, B., Johnson, M. R., Zhou, L., Smith, D., Kim, J., Laboutin, O., Cao, Y. & Johnson, J. W., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 5, 051209.

Research output: Contribution to journalArticle

Excimer lasers
High electron mobility transistors
high electron mobility transistors
excimer lasers
Aluminum Oxide
8 Citations (Scopus)

Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure

Zhu, C., Kaur, M., Tang, F., Liu, X., Smith, D. & Nemanich, R., Oct 15 2012, In : Journal of Applied Physics. 112, 8, 084105.

Research output: Contribution to journalArticle

hafnium oxides
vanadium oxides
interlayers
alignment
silicon
9 Citations (Scopus)
Zinc Oxide
Atomic layer deposition
atomic layer epitaxy
Valence bands
Zinc oxide
3 Citations (Scopus)

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

Li, J. J., Liu, X., Liu, S., Wang, S., Smith, D., Ding, D., Johnson, S., Furdyna, J. K. & Zhang, Y-H., Mar 19 2012, In : Applied Physics Letters. 100, 12, 121908.

Research output: Contribution to journalArticle

superlattices
molecular beam epitaxy
photoluminescence
optoelectronic devices
envelopes
21 Citations (Scopus)

Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates

Liu, X., Smith, D., Cao, H., Chen, Y. P., Fan, J., Zhang, Y-H., Pimpinella, R. E., Dobrowolska, M. & Furdyna, J. K., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 2, 02B103.

Research output: Contribution to journalArticle

Molecular beam epitaxy
insulators
Reflection high energy electron diffraction
Epitaxial films
Substrates

Characterization of Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb

Tang, D., Smith, D., Pimpinella, R. E., Li, X., Dobrowolska, M. & Furdyna, J. K., 2012, In : Microscopy and Microanalysis. 18, S2, p. 1438-1439 2 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
quantum dots

Characterization of Zinc Telluride Grown on Silicon by MBE

Kim, J. J., Smith, D., Chen, Y. & Brill, G. N., 2012, In : Microscopy and Microanalysis. 18, S2, p. 1848-1849 2 p.

Research output: Contribution to journalArticle

zinc tellurides
Molecular beam epitaxy
Zinc
Silicon
silicon

Charge Redistribution at ‘Polytype’ Heterojunctions in InAs(Sb) Nanopillars

Li, L., Gan, Z., Liang, H., Yu, H., Smith, D. & McCarthy, M. R., 2012, In : Microscopy and Microanalysis. 18, p. 1812-1813 2 p.

Research output: Contribution to journalArticle

Heterojunctions
heterojunctions
2 Citations (Scopus)

Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Zhou, L., Storm, D. F., Katzer, D. S., Meyer, D. J. & Smith, D., Oct 15 2012, In : Journal of Crystal Growth. 357, 1, p. 25-29 5 p.

Research output: Contribution to journalArticle

Heterojunctions
microstructure
Microstructure
Substrates
Defects
29 Citations (Scopus)
cryogenic temperature
dark current
epitaxy
photometers
optical measurement
9 Citations (Scopus)

Controlled growth behavior of chemical vapor deposited Ni nanostructures

Chan, K. T., Kan, J. J., Doran, C., Ouyang, L., Smith, D. & Fullerton, E. E., Jun 11 2012, In : Philosophical Magazine. 92, 17, p. 2173-2186 14 p.

Research output: Contribution to journalArticle

nanowires
vapors
products
metal halides
isolation
201 Citations (Scopus)

Covalently bonded three-dimensional carbon nanotube solids via boron induced nanojunctions

Hashim, D. P., Narayanan, N. T., Romo-Herrera, J. M., Cullen, D. A., Hahm, M. G., Lezzi, P., Suttle, J. R., Kelkhoff, D., Muñoz-Sandoval, E., Ganguli, S., Roy, A. K., Smith, D., Vajtai, R., Sumpter, B. G., Meunier, V., Terrones, H., Terrones, M. & Ajayan, P. M., 2012, In : Scientific Reports. 2, srep00363.

Research output: Contribution to journalArticle

Nanotubes
Carbon Nanotubes
Boron
Porosity
Seawater

Cross-Sectional Characterization of Defects in GaN MQW LEDs

Boley, A., Tsong, I. S. T. & Smith, D., 2012, In : Microscopy and Microanalysis. 18, S2, p. 1816-1817 2 p.

Research output: Contribution to journalArticle

Light emitting diodes
light emitting diodes
Defects
defects
19 Citations (Scopus)

Development of MBE II-VI epilayers on GaAs(211)B

Jacobs, R. N., Nozaki, C., Almeida, L. A., Jaime-Vasquez, M., Lennon, C., Markunas, J. K., Benson, D., Smith, P., Zhao, W. F., Smith, D., Billman, C., Arias, J. & Pellegrino, J., Oct 2012, In : Journal of Electronic Materials. 41, 10, p. 2707-2713 7 p.

Research output: Contribution to journalArticle

Epilayers
Molecular beam epitaxy
Buffer layers
Substrates
buffers
5 Citations (Scopus)

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Izyumskaya, N., Liu, S. J., Avrutin, V., Okur, S., Zhang, F., Özgür, Ü., Metzner, S., Karbaum, C., Bertram, F., Christen, J., Smith, D. & Morkoç, H., 2012, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8262. 826224

Research output: Chapter in Book/Report/Conference proceedingConference contribution

MOCVD
Metallorganic chemical vapor deposition
Growth Conditions
wings
Optical Properties

Evidence of deep ultraviolet amplified spontaneous emission in electron beam pumped AlGaN multiple-quantum-well-based structures

Nikiforov, A. Y., Zhang, W., Woodward, J., Yin, J., Paiella, R., Ludwig, K. F., Moustakas, T. D., Zhou, L. & Smith, D., 2012, 2012 Lester Eastman Conference on High Performance Devices, LEC 2012. 6410975

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cathodoluminescence
Spontaneous emission
Semiconductor quantum wells
Electron beams
Gallium

Four stages of defect creation in epitaxial structures: High resolution x-ray diffraction and transmission electron microscopy characterization

Faleev, N. N., Honsberg, C. & Smith, D., 2012, Conference Proceedings from the International Symposium for Testing and Failure Analysis. ASM International, p. 337-346 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystal defects
Diffraction
Transmission electron microscopy
Epitaxial growth
X rays
26 Citations (Scopus)

GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms

Beeler, R. T., Smith, D., Kouvetakis, J. & Menendez, J., 2012, In : IEEE Journal of Photovoltaics. 2, 4, p. 434-440 7 p., 6244831.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
Diodes
platforms
diodes
2 Citations (Scopus)

GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 865-874 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bending (forming)
Ultrahigh vacuum
Chemical vapor deposition
Photoluminescence
Energy gap

Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications

Liu, X., Furdyna, J. K., Fan, J., Ouyang, L., Smith, D., Ding, D. & Zhang, Y-H., 2012, 2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 6271134

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High resolution electron microscopy
Molecular beam epitaxy
Optoelectronic devices
Heterojunctions
Structural properties
21 Citations (Scopus)

Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001)

McDaniel, M. D., Posadas, A., Ngo, T. Q., Dhamdhere, A., Smith, D., Demkov, A. A. & Ekerdt, J. G., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 4, 04E111.

Research output: Contribution to journalArticle

Atomic layer deposition
Silicon
Strontium
atomic layer epitaxy
Crystallization
3 Citations (Scopus)

High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys

Beeler, R. T., Menendez, J., Smith, D. & Kouvetakis, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 591-599 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ternary alloys
Photodiodes
Optoelectronic devices
Lattice mismatch
Epilayers
14 Citations (Scopus)

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Storm, D. F., Meyer, D. J., Katzer, D. S., Binari, S. C., Paskova, T., Preble, E. A., Evans, K. R., Zhou, L. & Smith, D., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 2, 02B113.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Molecular beam epitaxy
molecular beam epitaxy
Growth temperature
5 Citations (Scopus)

InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications

Cellek, O. O., Li, H., Shen, X. M., Lin, Z., Steenbergen, E. H., Ding, D., Liu, S., Zhang, Q., Kim, H. S., Fan, J., Dinezza, M. J., Dettlaff, W. H. G., Webster, P. T., He, Z., Li, J. J., Johnson, S., Smith, D. & Zhang, Y-H., 2012, Proceedings of SPIE - The International Society for Optical Engineering. SPIE, Vol. 8353. 83533F

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Superlattices
Photoluminescence
Structural Properties
Structural properties
Infrared
5 Citations (Scopus)

Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

Fan, J., Ouyang, L., Liu, X., Ding, D., Furdyna, J. K., Smith, D. & Zhang, Y-H., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 2, 02B122.

Research output: Contribution to journalArticle

ramps
Molecular beam epitaxy
Materials properties
molecular beam epitaxy
Surface reconstruction
25 Citations (Scopus)

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB 2(0001) buffer layers

Blake, A. H., Caselli, D., Durot, C., Mueller, J., Parra, E., Gilgen, J., Boley, A., Smith, D., Tsong, I. S. T., Roberts, J. C., Piner, E., Linthicum, K., Cook, J. W., Koleske, D. D., Crawford, M. H. & Fischer, A. J., Feb 1 2012, In : Journal of Applied Physics. 111, 3, 033107.

Research output: Contribution to journalArticle

light emitting diodes
buffers
quantum wells
accident prevention
transition layers

Introduction: Opportunities, artifacts, and interpretation of aberration-corrected electron microscopy data

Batson, P. & Smith, D., Aug 2012, In : Microscopy and Microanalysis. 18, 4, p. 651 1 p.

Research output: Contribution to journalArticle

Aberrations
Electron microscopy
artifacts
aberration
electron microscopy
6 Citations (Scopus)
Plasma deposition
Atomic layer deposition
Growth temperature
atomic layer epitaxy
Stoichiometry
6 Citations (Scopus)

MBE-grown ZnTe/Si, a low-cost composite substrate

Chen, Y., Simingalam, S., Brill, G., Wijewarnasuriya, P., Dhar, N., Kim, J. J. & Smith, D., Oct 2012, In : Journal of Electronic Materials. 41, 10, p. 2917-2924 8 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
composite materials
Composite materials
Substrates
8 Citations (Scopus)

Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

Zhou, L., Gonschorek, M., Giraud, E., Feltin, E., Carlin, J. F., Grandjean, N., Smith, D. & McCartney, M., Dec 17 2012, In : Applied Physics Letters. 101, 25, 251902.

Research output: Contribution to journalArticle

quantum wells
electric fields
polarization
barrier layers
vapor phase epitaxy
7 Citations (Scopus)

Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates

Zhao, W. F., Brill, G., Chen, Y. & Smith, D., Oct 2012, In : Journal of Electronic Materials. 41, 10, p. 2852-2856 5 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Substrates
Microanalysis
Growth temperature

Microstructure of TiAlNiAu Ohmic Contacts for N-Polar GaN/AlGaN HEMTs

Zhou, L., Johnson, M. R., Storm, D. F., Meyer, D. J., Katzer, D. S. & Smith, D., 2012, In : Microscopy and Microanalysis. 18, S2, p. 1802-1803 2 p.

Research output: Contribution to journalArticle

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
electric contacts
microstructure
21 Citations (Scopus)

Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency

Zhang, W., Nikiforov, A. Y., Thomidis, C., Woodward, J., Sun, H., Kao, C. K., Bhattarai, D., Moldawer, A., Zhou, L., Smith, D. & Moustakas, T. D., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 2, 02B119.

Research output: Contribution to journalArticle

Quantum efficiency
Molecular beam epitaxy
Semiconductor quantum wells
quantum efficiency
Liquid phase epitaxy
23 Citations (Scopus)
Photodetectors
Structural properties
Optical properties
Hydrides
Equipment and Supplies
78 Citations (Scopus)

Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Kouvetakis, J. & Menendez, J., Aug 13 2012, In : Applied Physics Letters. 101, 7, 072105.

Research output: Contribution to journalArticle

reaction kinetics
ultrahigh vacuum
thick films
stoichiometry
crossovers
22 Citations (Scopus)

Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

Li, L., Jin, L., Wang, J., Smith, D., Yin, W. J., Yan, Y., Sang, H., Choy, W. C. H. & McCartney, M., Mar 8 2012, In : Advanced Materials. 24, 10, p. 1328-1332 5 p.

Research output: Contribution to journalArticle

Nanobelts
Charge distribution
Polarization
Nanostructures
Semiconductor materials
11 Citations (Scopus)

Progress and problems for atomic-resolution electron microscopy

Smith, D., Mar 2012, In : Micron. 43, 4, p. 504-508 5 p.

Research output: Contribution to journalArticle

Scanning Transmission Electron Microscopy
Electron Microscopy
Electrons

Quantifying polarization fields and sheet charge in III-nitride HEMT devices using off-axis electron holography

Johnson, M. R., Cullen, D. A., Smith, D., Zhou, L. & McCartney, M., 2012, In : Microscopy and Microanalysis. 18, p. 1832-1833 2 p.

Research output: Contribution to journalArticle

Electron holography
High electron mobility transistors
high electron mobility transistors
Nitrides
holography
3 Citations (Scopus)

Sequential tunneling transport in GaN/AlGaN quantum cascade structures

Sudradjat, F. F., Zhang, W., Driscoll, K., Liao, Y., Bhattacharyya, A., Thomidis, C., Zhou, L., Smith, D., Moustakas, T. D. & Paiella, R., Mar 2012, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 3-4, p. 588-591 4 p.

Research output: Contribution to journalArticle

cascades
low resistance
electric potential
polarity
ground state
22 Citations (Scopus)

Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Steenbergen, E. H., Nunna, K., Ouyang, L., Ullrich, B., Huffaker, D. L., Smith, D. & Zhang, Y-H., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 2, 02B107.

Research output: Contribution to journalArticle

Superlattices
Molecular beam epitaxy
superlattices
Photoluminescence
molecular beam epitaxy
2 Citations (Scopus)

Structural properties of InAs/InAs 1-xSb x type-II superlattices

Ouyang, L., Steenbergen, E. H., Cellek, O. O., Zhang, Y-H. & Smith, D., 2012, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8268. 826830

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Superlattices
Structural Properties
superlattices
Structural properties
Substrate
8 Citations (Scopus)

Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy

Ouyang, L., Steenbergen, E. H., Zhang, Y-H., Nunna, K., Huffaker, D. L. & Smith, D., 2012, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 2, 02B106.

Research output: Contribution to journalArticle

Superlattices
Molecular beam epitaxy
superlattices
Structural properties
molecular beam epitaxy

Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures

Pecora, E. F., Zhang, W., Zhou, L., Smith, D., Yin, J., Paiella, R., Dal Negro, L. & Moustakas, T. D., 2012, 2012 Conference on Lasers and Electro-Optics, CLEO 2012. 6325894

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical gain
Molecular beam epitaxy
Semiconductor quantum wells
Temperature
aluminum gallium nitride

Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures

Pecora, E. F., Zhang, W., Zhou, L., Smith, D., Yin, J., Paiella, R., Negro, L. D. & Moustakas, T. D., 2012, CLEO: Science and Innovations, CLEO_SI 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical gain
Molecular beam epitaxy
Semiconductor quantum wells
Temperature
aluminum gallium nitride