Find Scholarly Works

Search concepts
Selected Filters
2014
4 Citations (Scopus)

Characterization of a-plane GaN templates grown by HVPE and high efficiency deep UV emitting AlGaN/AlN MQWs grown by MBE on such templates

Moldawer, A., Bhattacharyya, A., Zhou, L., Smith, D. & Moustakas, T. D., 2014, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 3-4, p. 585-589 5 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
hydrides
molecular beam epitaxy
templates
quantum wells

Characterization of N-polar GaN/AlGaN/GaN heterostructures using electron holography

Boley, A., Storm, D. F., McCartney, M. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 258-259 2 p.

Research output: Contribution to journalArticle

Electron holography
holography
Heterojunctions
electrons
19 Citations (Scopus)

Determination of polarization-fields across polytype interfaces in InAs nanopillars

Li, L., Gan, Z., McCartney, M., Liang, H., Yu, H., Yin, W. J., Yan, Y., Gao, Y., Wang, J. & Smith, D., Feb 19 2014, In : Advanced Materials. 26, 7, p. 1052-1057 6 p.

Research output: Contribution to journalArticle

Polarization
Electric properties
Ions
indium arsenide
7 Citations (Scopus)

Discontinuous reactions in melt-spun Cu-10 at. %Co alloys and their effect on magnetic anisotropy

Suguihiro, N. M., Xing, Y. T., Haeussler, D., Jaeger, W., Smith, D., Baggio-Saitovitch, E. & Solórzano, I. G., 2014, In : Journal of Materials Science. 49, 18, p. 6167-6179 13 p.

Research output: Contribution to journalArticle

Magnetic anisotropy
Precipitates
Coarsening
Annealing
Grain boundaries
15 Citations (Scopus)

Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

Hwang, Y. H., Li, S., Hsieh, Y. L., Ren, F., Pearton, S. J., Patrick, E., Law, M. E. & Smith, D., 2014, In : Applied Physics Letters. 104, 8, 82106.

Research output: Contribution to journalArticle

proton irradiation
high electron mobility transistors
electrical faults
protons
defects
8 Citations (Scopus)

Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Li, S., Hwang, Y. H., Hsieh, Y. L., Lei, L., Ren, F., Pearton, S. J., Patrick, E., Law, M. E., Velez Cuervo, C. & Smith, D., 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 2, 021203.

Research output: Contribution to journalArticle

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
Electric breakdown
22 Citations (Scopus)

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

Toporkov, M., Avrutin, V., Okur, S., Izyumskaya, N., Demchenko, D., Volk, J., Smith, D., Morkoc¸, H. & Özgür, 2014, In : Journal of Crystal Growth. 402, p. 60-64 5 p.

Research output: Contribution to journalArticle

quaternary alloys
Optical band gaps
wurtzite
Energy gap
augmentation
1 Citation (Scopus)

Epitaxial growth: Phenomenological model of defect creation

Faleev, N. N., Smith, D. & Honsberg, C., Oct 15 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 724-728 5 p. 6925022

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Defects
Deterioration
Physical properties
Crystalline materials
14 Citations (Scopus)

Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization

Kormondy, K. J., Posadas, A. B., Slepko, A., Dhamdhere, A., Smith, D., Mitchell, K. N., Willett-Gies, T. I., Zollner, S., Marshall, L. G., Zhou, J. & Demkov, A. A., Jun 28 2014, In : Journal of Applied Physics. 115, 24, 243708.

Research output: Contribution to journalArticle

epitaxy
ellipsometry
valence
carbon monoxide
high energy electrons
18 Citations (Scopus)

Fabrication of nanograined silicon by high-pressure torsion

Ikoma, Y., Hayano, K., Edalati, K., Saito, K., Guo, Q., Horita, Z., Aoki, T. & Smith, D., 2014, In : Journal of Materials Science. 49, 19, p. 6565-6569 5 p.

Research output: Contribution to journalArticle

Silicon
Torsional stress
Fabrication
Diamond
Diamonds
25 Citations (Scopus)

Ge1- ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journalArticle

optical properties
microstructure
synthesis
vapor deposition
wafers
2 Citations (Scopus)

High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design

Vijaya, G. K., Freundlich, A., Tang, D. & Smith, D., Oct 15 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 2900-2902 3 p. 6925538

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nitrogen plasma
Plasma sources
Molecular beam epitaxy
Nitrides
Semiconductor quantum wells

Improving the spatial resolution of atomic-scale EDS mapping for chemical imaging and quantification of metallic alloy structures

Lu, P., Romero, E., Zhou, L., Kramer, M. J. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 130-131 2 p.

Research output: Contribution to journalArticle

Energy dispersive spectroscopy
spatial resolution
Imaging techniques

InGaAs/GaAs MQWs: Correlation of crystal and physical properties

Karow, M. M., Faleev, N. N., Ning, C-Z., Smith, D. & Honsberg, C., Oct 15 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 660-665 6 p. 6925008

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Physical properties
Growth temperature
Crystals
Photoluminescence spectroscopy
Molecular beam epitaxy

In situ biasing of tapered Si-Ge nw heterojunctions using off-axis electron holography

Gan, Z., Perea, D., He, Y., Colby, R., Gu, M., Jinkyoung, Y., Wang, C., Picraux, S. T., Smith, D. & McCartney, M., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 256-257 2 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
magnetic domains
holography
spinel
ferrites
magnetic force microscopy
Solar cells
solar cells
composite materials
Composite materials
Substrates
8 Citations (Scopus)

Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices

Zhou, L., Johnson, M. R., Smith, D., Meyer, D. J., Storm, D. F., Scott Katzer, D. & Downey, B. P., Jan 1 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 1, 011201.

Research output: Contribution to journalArticle

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
electric contacts
Contact resistance
15 Citations (Scopus)

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Webster, P. T., Riordan, N. A., Gogineni, C., Liu, S., Lu, J., Zhao, X. H., Smith, D., Zhang, Y-H. & Johnson, S., 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 2, 02C120.

Research output: Contribution to journalArticle

Bismuth
Superlattices
Molecular beam epitaxy
Surface-Active Agents
bismuth
5 Citations (Scopus)
Nanostructures
Semiconductor materials
Experiments
Imaging techniques
Diamond
4 Citations (Scopus)

Optimization of In2Se3/Si(111) heteroepitaxy to enable Bi2Se3/In2Se3 bilayer growth

Rathi, S. J., Smith, D. & Drucker, J., Sep 3 2014, In : Crystal Growth and Design. 14, 9, p. 4617-4623 7 p.

Research output: Contribution to journalArticle

Epitaxial growth
optimization
Epilayers
Molecular beam epitaxy
Transmission electron microscopy
Superlattices
superlattices
interfacial tension

Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition

Kim, Y., Faleev, N., Tang, D., Smith, D., Kuciauskas, D., Dippo, P. C. & Honsberg, C., Oct 15 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 1056-1058 3 p. 6925095

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum dots
Structural properties
Optical properties
Chemical analysis
Photoluminescence

Study of magnetic domain structure in Co(Fe)/Pd multilayers using off-axis electron holography

Zhang, D., Shaw, J. M., Smith, D. & McCartney, M., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 284-285 2 p.

Research output: Contribution to journalArticle

Electron holography
Magnetic domains
magnetic domains
holography
Multilayers
8 Citations (Scopus)

Using structural disorder to enhance the magnetism and spin-polarization in FexSi1-x thin films for spintronics

Karel, J., Zhang, Y. N., Bordel, C., Stone, K. H., Chen, T., Jenkins, C. A., Smith, D., Hu, J., Wu, R. Q., Heald, S. M., Kortright, J. B. & Hellman, F., Jun 1 2014, In : Materials Research Express. 1, 2, 026102.

Research output: Contribution to journalArticle

Magnetoelectronics
Spin polarization
Magnetism
Magnetization
Crystalline materials
2013
5 Citations (Scopus)

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Li, H., Liu, S., Cellek, O. O., Ding, D., Shen, X. M., Steenbergen, E. H., Fan, J., Lin, Z., He, Z. Y., Zhang, Q., Webster, P. T., Johnson, S., Ouyang, L., Smith, D. & Zhang, Y-H., 2013, In : Journal of Crystal Growth. 378, p. 145-149 5 p.

Research output: Contribution to journalArticle

Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Calibration
11 Citations (Scopus)

Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles

Li, L., Gan, Z., McCartney, M., Liang, H., Yu, H., Gao, Y., Wang, J. & Smith, D., Nov 15 2013, In : Scientific Reports. 3, 3229.

Research output: Contribution to journalArticle

dipoles
configurations
crystal defects
aberration
inversions
3 Citations (Scopus)

Atomic-scale characterization of (mostly zincblende) compound semiconductor heterostructures

Smith, D., Aoki, T., Furdyna, J. K., Liu, X., McCartney, M. & Zhang, Y-H., 2013, In : Journal of Physics: Conference Series. 471, 1, 012005.

Research output: Contribution to journalArticle

zincblende
defects
aberration
electron microscopy
interfacial tension
6 Citations (Scopus)

Atomic-scale characterization of ii-vi compound semiconductors

Smith, D., Nov 2013, In : Journal of Electronic Materials. 42, 11, p. 3168-3174 7 p.

Research output: Contribution to journalArticle

Semiconductor materials
Photonic devices
zincblende
Photodetectors
optoelectronic devices
13 Citations (Scopus)

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2013, In : ECS Journal of Solid State Science and Technology. 2, 9

Research output: Contribution to journalArticle

Photodiodes
Optoelectronic devices
Diodes
Energy gap
Semiconductor materials
7 Citations (Scopus)

Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates

Chai, J., Noriega, O. C., Dedigama, A., Kim, J. J., Savage, A. A., Doyle, K., Smith, C., Chau, N., Pena, J., Dinan, J. H., Smith, D. & Myers, T. H., Nov 2013, In : Journal of Electronic Materials. 42, 11, p. 3090-3096 7 p.

Research output: Contribution to journalArticle

Epitaxial layers
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
Diffraction
33 Citations (Scopus)

Development of AlGaN-based graded-index-separate-confinement- heterostructure deep UV emitters by molecular beam epitaxy

Sun, H., Woodward, J., Yin, J., Moldawer, A., Pecora, E. F., Nikiforov, A. Y., Dal Negro, L., Paiella, R., Ludwig, K., Smith, D. & Moustakas, T. D., 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C117.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Electron beam pumping
Heterojunctions
emitters
molecular beam epitaxy
24 Citations (Scopus)

Electroluminescence and transmission electron microscopy characterization of reverse-biased AlGaN/GaN devices

Cullen, D. A., Smith, D., Passaseo, A., Tasco, V., Stocco, A., Meneghini, M., Meneghesso, G. & Zanoni, E., 2013, In : IEEE Transactions on Device and Materials Reliability. 13, 1, p. 126-135 10 p., 6317160.

Research output: Contribution to journalArticle

Electroluminescence
Transmission electron microscopy
Defects
Leakage currents
Electric potential
38 Citations (Scopus)

Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates

McDaniel, M. D., Posadas, A., Ngo, T. Q., Dhamdhere, A., Smith, D., Demkov, A. A. & Ekerdt, J. G., Jan 2013, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 31, 1, 01A136.

Research output: Contribution to journalArticle

Atomic layer deposition
Strontium
atomic layer epitaxy
strontium
Substrates
2 Citations (Scopus)

Epitaxial Zintl aluminide SrAl4 grown on a LaAlO3 substrate

Schlipf, L., Slepko, A., Posadas, A. B., Seinige, H., Dhamdhere, A., Tsoi, M., Smith, D. & Demkov, A. A., Jul 17 2013, In : Physical Review B - Condensed Matter and Materials Physics. 88, 4, 045314.

Research output: Contribution to journalArticle

Reflection high energy electron diffraction
Substrates
Photoelectron spectroscopy
Epitaxial growth
Molecular beam epitaxy
7 Citations (Scopus)

Exploring aberration-corrected electron microscopy for compound semiconductors

Smith, D., Aoki, T., Mardinly, J., Zhou, L. & McCartney, M., Jun 2013, In : Journal of Electron Microscopy. 62, SUPPL.1

Research output: Contribution to journalArticle

Semiconductors
Aberrations
Electron microscopy
aberration
electron microscopy
4 Citations (Scopus)

GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy

Fan, J., Ouyang, L., Liu, X., Furdyna, J. K., Smith, D. & Zhang, Y-H., May 15 2013, In : Journal of Crystal Growth. 371, p. 122-125 4 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Thermal evaporation
Defect density
17 Citations (Scopus)

Guided VLS growth of epitaxial lateral Si nanowires

Rathi, S. J., Smith, D. & Drucker, J., Aug 14 2013, In : Nano Letters. 13, 8, p. 3878-3883 6 p.

Research output: Contribution to journalArticle

Nanowires
nanowires
Substrates
Liquids
liquid-solid interfaces
24 Citations (Scopus)

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

Bremner, S. P., Ban, K. Y., Faleev, N. N., Honsberg, C. & Smith, D., Sep 14 2013, In : Journal of Applied Physics. 114, 10, 103511.

Research output: Contribution to journalArticle

stress relaxation
quantum dots
barrier layers
molecular beam epitaxy
wafers
8 Citations (Scopus)

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Liu, S., Li, H., Cellek, O. O., Ding, D., Shen, X. M., Lin, Z. Y., Steenbergen, E. H., Fan, J., He, Z. Y., Lu, J., Johnson, S., Smith, D. & Zhang, Y-H., Feb 18 2013, In : Applied Physics Letters. 102, 7, 071903.

Research output: Contribution to journalArticle

superlattices
molecular beam epitaxy
optical properties
photoluminescence
temperature
2 Citations (Scopus)

InAs/InAs1_xSbx superlattices on GaSb substrates: A promising material system for mid- and long-wavelength infrared detectors

Steenbergen, E. H., Cellek, O. O., Li, H., Liu, S., Shen, X., Smith, D. & Zhang, Y-H., Nov 5 2013, The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications. SPIE, p. 59-83 25 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Nanotechnology
Infrared detectors
Superlattices
Wavelength
Substrates
6 Citations (Scopus)

Magnetic properties of GaAs/Fe core/shell nanowires

Pimpinella, R. E., Zhang, D., McCartney, M., Smith, D., Krycka, K. L., Kirby, B. J., Odowd, B. J., Sonderhouse, L., Leiner, J., Liu, X., Dobrowolska, M. & Furdyna, J. K., May 7 2013, In : Journal of Applied Physics. 113, 17, 17B520.

Research output: Contribution to journalArticle

ferromagnetic resonance
holography
neutron scattering
nanowires
molecular beam epitaxy
16 Citations (Scopus)

Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

Gan, Z., Perea, D. E., Yoo, J., Tom Picraux, S., Smith, D. & McCartney, M., Oct 7 2013, In : Applied Physics Letters. 103, 15, 153108.

Research output: Contribution to journalArticle

p-n junctions
holography
nanowires
electrostatics
profiles
1 Citation (Scopus)

MBE growth of thin hexagonal films Bi2 Te3, Bi2 Se3, and their alloys on cubic GaAs (001) substrates

Liu, X., Chen, Y. P., Smith, D., Zhang, Y. H., Liu, C., Hasan, M. Z., Dobrowolska, M., Furdyna, J. K., Fan, J., Cao, H., Wu, T. L. & Pimpinella, R. E., Jan 1 2013, Springer Series in Materials Science. Springer Verlag, p. 263-279 17 p. (Springer Series in Materials Science; vol. 186).

Research output: Chapter in Book/Report/Conference proceedingChapter

Molecular beam epitaxy
Thin films
Substrates
Reflection high energy electron diffraction
Epitaxial films
18 Citations (Scopus)

Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells

Zhou, L., Dimakis, E., Hathwar, R., Aoki, T., Smith, D., Moustakas, T. D., Goodnick, S. & McCartney, M., Sep 25 2013, In : Physical Review B - Condensed Matter and Materials Physics. 88, 12, 125310.

Research output: Contribution to journalArticle

barrier layers
Semiconductor quantum wells
Monolayers
quantum wells
Polarization
2 Citations (Scopus)

Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors

Fan, J., Liu, X., Ouyang, L., Pimpinella, R. E., Dobrowolska, M., Furdyna, J. K., Smith, D. & Zhang, Y-H., 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C109.

Research output: Contribution to journalArticle

Distributed Bragg reflectors
Molecular beams
Bragg reflectors
Epitaxial growth
molecular beams
6 Citations (Scopus)
Silicon
tetrahedrons
Structural properties
Optical properties
assembly
21 Citations (Scopus)

Oxygen vacancy-mediated room-temperature ferromagnetism in insulating cobalt-substituted SrTiO3 epitaxially integrated with silicon

Posadas, A. B., Mitra, C., Lin, C., Dhamdhere, A., Smith, D., Tsoi, M. & Demkov, A. A., Apr 29 2013, In : Physical Review B - Condensed Matter and Materials Physics. 87, 14, 144422.

Research output: Contribution to journalArticle

Ferromagnetism
Silicon
Oxygen vacancies
Cobalt
ferromagnetism
2 Citations (Scopus)

Rational design of monocrystalline (InP)yGe5-2y/Ge/ Si(100) semiconductors: Synthesis and optical properties

Sims, P. E., Chizmeshya, A., Jiang, L., Beeler, R. T., Poweleit, C. D., Gallagher, J., Smith, D., Menendez, J. & Kouvetakis, J., Aug 21 2013, In : Journal of the American Chemical Society. 135, 33, p. 12388-12399 12 p.

Research output: Contribution to journalArticle

Semiconductors
Diamond
Raman Spectrum Analysis
Molecular Structure
Optical properties
24 Citations (Scopus)

Reliability studies of AlGaN/GaN high electron mobility transistors

Cheney, D. J., Douglas, E. A., Liu, L., Lo, C. F., Xi, Y. Y., Gila, B. P., Ren, F., Horton, D., Law, M. E., Smith, D. & Pearton, S. J., Jul 2013, In : Semiconductor Science and Technology. 28, 7, 074019.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Electric fields
Degradation
Electric currents