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2010

Detailed balance calculations of multiple exciton generation and Tandem Hybrid solar cells

Lee, J. & Honsberg, C., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 2932-2937 6 p. 5615913

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Excitons
Solar cells
Energy gap
Quantum yield
Sun
7 Citations (Scopus)

Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

Ban, K. Y., Kuciauskas, D., Bremnerand, S. P. & Honsberg, C., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 3306-3309 4 p. 5617048

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Valence bands
Photoluminescence
Chemical analysis
Semiconductor quantum dots
Surface active agents
3 Citations (Scopus)

Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance

Ghosh, K., Tracy, C. J., Dauksher, B., Herasimenka, S., Honsberg, C. & Bowden, S., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 2680-2683 4 p. 5617086

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Inversion layers
Amorphous silicon
Heterojunctions
Crystalline materials
Silicon

Effect of small continuous loads on inverter and system efficiency

Chhabra, B., Kamada, R., Opila, R. L. & Honsberg, C., Jul 1 2010, In : Journal of Renewable and Sustainable Energy. 2, 4, 043105.

Research output: Contribution to journalArticle

Electric wiring
Costs
Availability
Controllers

Effect of small continuous loads on system efficiency

Chhabra, B., Kamada, R., Opila, R. L. & Honsberg, C., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 2327-2331 5 p. 5614448

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Costs
Energy utilization
12 Citations (Scopus)

Explanation of the device operation principle of amorphous silicon/crystalline silicon heterojunction solar cell and role of the inversion of crystalline silicon surface

Ghosh, K., Tracy, C. J., Herasimenka, S., Honsberg, C. & Bowden, S., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 1383-1386 4 p. 5614387

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amorphous silicon
Heterojunctions
Solar cells
Crystalline materials
Silicon
44 Citations (Scopus)

High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation

Chhabra, B., Bowden, S., Opila, R. L. & Honsberg, C., 2010, In : Applied Physics Letters. 96, 6, 063502.

Research output: Contribution to journalArticle

carrier lifetime
minority carriers
passivity
methyl alcohol
silicon
17 Citations (Scopus)

Identification of candidate material systems for quantum dot solar cells including the effect of strain

Dahal, S. N., Bremner, S. P. & Honsberg, C., Jun 2010, In : Progress in Photovoltaics: Research and Applications. 18, 4, p. 233-239 7 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Solar cells
solar cells
quantum dots
Valence bands
7 Citations (Scopus)

Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces

Bremner, S. P., Ghosh, K., Nataraj, L., Cloutier, S. G. & Honsberg, C., Oct 29 2010, In : Thin Solid Films. 519, 1, p. 64-68 5 p.

Research output: Contribution to journalArticle

Structural properties
Optical properties
optical properties
X ray diffraction
high resolution
5 Citations (Scopus)

Realization OF InGaN solar cells on (111) silicon substrate

Jampana, B., Xu, T., Melton, A., Jamil, M., Opila, R., Honsberg, C. & Ferguson, I., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 457-460 4 p. 5616748

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Solar cells
Silicon
Sapphire
Substrates
Epitaxial layers
4 Citations (Scopus)

Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well

Ban, K. Y., Dahal, S. N., Honsberg, C., Nataraj, L., Bremner, S. P. & Cloutier, S. G., 2010, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28, 3

Research output: Contribution to journalArticle

Semiconductor quantum wells
Photoluminescence
Capacitance
capacitance
Doping (additives)
34 Citations (Scopus)

Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

Ban, K. Y., Bremner, S. P., Liu, G., Dahal, S. N., Dippo, P. C., Norman, A. G. & Honsberg, C., 2010, In : Applied Physics Letters. 96, 18, 183101.

Research output: Contribution to journalArticle

buffers
quantum dots
surfactants
atomic force microscopy
photoluminescence
12 Citations (Scopus)

Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system

Pancholi, A., Bremner, S. P., Boyle, J., Stoleru, V. G. & Honsberg, C., Jun 2010, In : Solar Energy Materials and Solar Cells. 94, 6, p. 1025-1030 6 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Heterojunctions
Photoluminescence
Solar cells
Temperature