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  • John Kouvetakis
2016

Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Agha, I., Menendez, J. & Kouvetakis, J., 2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc., Vol. 75. p. 163-176 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations
2020

Radiation-induced electron and hole traps in Ge1 -x Sn x (x = 0-0.094)

Hogsed, M., Choe, K., Miguel, N., Wang, B. & Kouvetakis, J., Feb 14 2020, In : Journal of Applied Physics. 127, 6, 065708.

Research output: Contribution to journalArticle

Open Access
2019

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
8 Scopus citations

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

1 Scopus citations

Materials physics of GeSn-based semiconductor lasers

Menendez, J., Wallace, P. M., Xu, C., Senaratne, C. L., Gallagher, J. D. & Kouvetakis, J., 2019, In : Materials Today: Proceedings. 14, p. 38-42 5 p.

Research output: Contribution to journalConference article

2 Scopus citations
2020
2018

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J. & Menendez, J., Sep 5 2018, IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., p. 35-36 2 p. 8456690

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016
21 Scopus citations
2018

Investigation of hydrogen inductively coupled plasma treatment effect for Ge 0.938 Sn 0.062 /Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journalArticle

1 Scopus citations
2016

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

7 Scopus citations

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

20 Scopus citations

Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journalArticle

8 Scopus citations
2018

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

2019

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journalArticle

2016

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journalArticle

7 Scopus citations
2018

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

3 Scopus citations
2019

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

Xu, C., Ringwala, D., Wang, D., Liu, L., Poweleit, C. D., Chang, S. L. Y., Zhuang, H. L., Menéndez, J. & Kouvetakis, J., Jan 1 2019, (Accepted/In press) In : Chemistry of Materials.

Research output: Contribution to journalArticle

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, S. L. Y., Poweleit, C. D., Kouvetakis, J. & Menéndez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

4 Scopus citations