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  • John Kouvetakis
2016

Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Agha, I., Menendez, J. & Kouvetakis, J., 2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc., Vol. 75. p. 163-176 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations
2017

Single-defect hexapole mode GeSn photonic crystal laser: Fabrication and simulation

Bao, S., Qiu, H., Kim, Y., Lin, Y., Ryu, H. Y., Ryu, M. Y., Yeo, Y. K., Kouvetakis, J., Fitzgerald, E., Wang, H., Nam, D. & Tan, C. S., Oct 25 2017, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2020

Radiation-induced electron and hole traps in Ge1 -x Sn x (x = 0-0.094)

Hogsed, M., Choe, K., Miguel, N., Wang, B. & Kouvetakis, J., Feb 14 2020, In : Journal of Applied Physics. 127, 6, 065708.

Research output: Contribution to journalArticle

Open Access
2019

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
8 Scopus citations
2017

Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In : ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.

Research output: Contribution to journalArticle

2019

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

1 Scopus citations

Materials physics of GeSn-based semiconductor lasers

Menendez, J., Wallace, P. M., Xu, C., Senaratne, C. L., Gallagher, J. D. & Kouvetakis, J., 2019, In : Materials Today: Proceedings. 14, p. 38-42 5 p.

Research output: Contribution to journalConference article

2 Scopus citations
2017

Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journalArticle

6 Scopus citations
2020
2017

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Nov 1 2017, In : Applied Surface Science. 421, p. 905-912 8 p.

Research output: Contribution to journalArticle

7 Scopus citations

Synthesis and optical properties of (GaAs)yGe5-2 y alloys assembled from molecular building blocks

Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In : Applied Physics Letters. 111, 12, 122101.

Research output: Contribution to journalArticle

2 Scopus citations

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge

Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In : Physical Review Letters. 118, 26, 267402.

Research output: Contribution to journalArticle

5 Scopus citations
2016
21 Scopus citations

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journalArticle

5 Scopus citations
2017
15 Scopus citations
2016

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

7 Scopus citations
2017
2 Scopus citations
2016

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

20 Scopus citations

Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journalArticle

8 Scopus citations
2019

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journalArticle

2016

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journalArticle

7 Scopus citations
2019

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

Xu, C., Ringwala, D., Wang, D., Liu, L., Poweleit, C. D., Chang, S. L. Y., Zhuang, H. L., Menéndez, J. & Kouvetakis, J., Jan 1 2019, (Accepted/In press) In : Chemistry of Materials.

Research output: Contribution to journalArticle

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, S. L. Y., Poweleit, C. D., Kouvetakis, J. & Menéndez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

4 Scopus citations