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  • Fernando Ponce
2017

Microstructure and polarization properties of III-nitride semiconductors

Ponce, F., Jan 1 2017, Handbook of GaN Semiconductor Materials and Devices. CRC Press, p. 53-86 34 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

2012

Compositional instability in InAlN/GaN lattice-matched epitaxy

Wei, Q. Y., Li, T., Huang, Y., Huang, J. Y., Chen, Z. T., Egawa, T. & Ponce, F., Feb 27 2012, In : Applied Physics Letters. 100, 9, 092101.

Research output: Contribution to journalArticle

25 Scopus citations
2019

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Alugubelli, S. R., Fu, H., Fu, K., Liu, H., Zhao, Y., McCartney, M. R. & Ponce, F. A., Nov 11 2019, In : Applied Physics Letters. 115, 20, 201602.

Research output: Contribution to journalArticle

Open Access
2011

Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

Wang, B., Bliss, D., Suscavage, M., Swider, S., Lancto, R., Lynch, C., Weyburne, D., Li, T. & Ponce, F., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 1030-1033 4 p.

Research output: Contribution to journalArticle

19 Scopus citations
2020

Investigation of polycrystalline GaxIn1-xP for potential use as a solar cell absorber with tunable bandgap

Chikhalkar, A., Gangopadhyay, A., Liu, H., Zhang, C., Ponce, F. A., Smith, D. J., Honsberg, C. & King, R. R., Feb 21 2020, In : Journal of Applied Physics. 127, 7, 073102.

Research output: Contribution to journalArticle

2011

Microstructure and polarization fields in nitride semiconductors

Ponce, F., 2011, In : Journal of Physics: Conference Series. 326, 1, 012001.

Research output: Contribution to journalConference article

4 Scopus citations
2019

Novel semiconductors for sustainable solar energy technologies

Ponce, F., Mar 14 2019, In : Journal of Physics: Conference Series. 1173, 1, 012001.

Research output: Contribution to journalConference article

Open Access
2018

Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Fu, H., Zhang, X., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Baranowski, I., Yang, T. H., Xu, K., Ponce, F., Zhang, B. & Zhao, Y., Nov 2018, In : Applied Physics Express. 11, 11, 111003.

Research output: Contribution to journalArticle

6 Scopus citations
2011
9 Scopus citations
2019

Corrections to: Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices (IEEE Journal of Quantum Electronics (2018) 54: 4 (2400507) DOI: 10.1109/JQE.2018.2836667)

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Jun 1 2019, In : IEEE Journal of Quantum Electronics. 55, 3, 8684328.

Research output: Contribution to journalComment/debate

Development for ultraviolet vertical cavity surface emitting lasers

Liu, Y. S., Saniul Haq, A. F. M., Kao, T. T., Mehta, K., Shen, S. C., Detchprohm, T., Douglas Yoder, P., Xie, H., Ponce, F. & Dupuis, R. D., Jan 1 2019, Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015. Optical Society of America (OSA), (Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

Ryou, J. H., Kim, J., Choi, S., Kim, H. J., Lochner, Z., Ji, M. H., Satter, M. M., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Asadirad, M., Liu, J. P., Kim, J. S., Fischere, A. M., Juday, R., Ponce, F., Kwon, M. K., Yuan, D., Guo, R. & Das, S., 2014, ECS Transactions. 4 ed. Electrochemical Society Inc., Vol. 61. p. 109-116 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Li, X. H., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A. & Ponce, F., Jan 1 2014, Novel In-Plane Semiconductor Lasers XIII. SPIE, 90020H. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 9002).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Fabien, C. A. M., Moseley, M., Gunning, B., Doolittle, W. A., Fischer, A. M., Wei, Y. O. & Ponce, F., Mar 1 2014, In : IEEE Journal of Photovoltaics. 4, 2, p. 601-606 6 p., 6683005.

Research output: Contribution to journalArticle

20 Scopus citations

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F. & Haigh, S. J., May 30 2014, In : Nanotechnology. 25, 21, 215705.

Research output: Contribution to journalArticle

7 Scopus citations
2012

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Choi, S., Ji, M. H., Kim, J., Jin Kim, H., Satter, M. M., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Fischer, A. M. & Ponce, F., Oct 15 2012, In : Applied Physics Letters. 101, 16, 161110.

Research output: Contribution to journalArticle

74 Scopus citations
2013

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Li, T., Wei, Q. Y., Fischer, A. M., Huang, J. Y., Huang, Y. U., Ponce, F., Liu, J. P., Lochner, Z., Ryou, J. H. & Dupuis, R. D., Jan 28 2013, In : Applied Physics Letters. 102, 4, 041115.

Research output: Contribution to journalArticle

19 Scopus citations

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Fischer, A. M., Wei, Y. O., Ponce, F., Moseley, M., Gunning, B. & Doolittle, W. A., Sep 23 2013, In : Applied Physics Letters. 103, 13, 131101.

Research output: Contribution to journalArticle

24 Scopus citations
2016

Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Liu, Y. S., Haq, A. F. M. S., Kao, T. T., Mehta, K., Shen, S. C., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Xie, H. & Ponce, F., Jun 1 2016, In : Journal of Crystal Growth. 443, p. 81-84 4 p.

Research output: Contribution to journalArticle

13 Scopus citations

Onset of deep UV surface stimulated emission from AlGaN multiple quantum wells

Li, X., Xie, H., Ponce, F., Ryou, J. H., Detchprohm, T. & Dupuis, R., Dec 16 2016, 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 7788056

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates

Torelly, G., Jakomin, R., Pires, M. P., Dornelas, L. P., Prioli, R., Caldas, P. G., Xie, H., Ponce, F. & Souza, P. L., Oct 13 2015, SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Institute of Electrical and Electronics Engineers Inc., 7298133

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Growth of single-phase wurtzite BAlN with 7.2%-B contents

Li, X., Wang, S., Liu, H., Ponce, F., Detchprohm, T. & Dupuis, R., Dec 16 2016, 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 7789116. (2016 Conference on Lasers and Electro-Optics, CLEO 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

Low-temperature growth of InGaN films over the entire composition range by MBE

Fabien, C. A. M., Gunning, B. P., Alan Doolittle, W., Fischer, A. M., Wei, Y. O., Xie, H. & Ponce, F., Jun 20 2015, In : Journal of Crystal Growth. 425, p. 115-118 4 p.

Research output: Contribution to journalArticle

21 Scopus citations
2018

Dislocation baskets in thick InxGa1-xN epilayers

Wang, S., Xie, H., Liu, H., Fischer, A. M., McFavilen, H. & Ponce, F., Sep 14 2018, In : Journal of Applied Physics. 124, 10, 105701.

Research output: Contribution to journalArticle

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Weiner, E. C., Jakomin, R., Micha, D. N., Xie, H., Su, P. Y., Pinto, L. D., Pires, M. P., Ponce, F. & Souza, P. L., May 1 2018, In : Solar Energy Materials and Solar Cells. 178, p. 240-248 9 p.

Research output: Contribution to journalArticle

11 Scopus citations

Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Jan 1 2018, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

3 Scopus citations
2019

Identification of point defects using high-resolution electron energy loss spectroscopy

Wang, S., March, K., Ponce, F. & Rez, P., Mar 18 2019, In : Physical Review B. 99, 11, 115312.

Research output: Contribution to journalArticle

2 Scopus citations
2015

Optically pumped low-threshold UV lasers

Li, X. H., Detchprohm, T., Liu, Y. S., Dupuis, R. D., Kao, T. T., Haq, S., Shen, S. C., Mehta, K., Yoder, P. D., Wang, S., Wei, Y. O., Xie, H., Fischer, A. M., Ponce, F., Wernicke, T., Reich, C., Martens, M. & Kneissl, M., Sep 9 2015, 2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., p. 119-120 2 p. 7248226

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017

Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Detchprohm, T., Liu, Y. S., Mehta, K., Wang, S., Xie, H., Kao, T. T., Shen, S. C., Yoder, P. D., Ponce, F. & Dupuis, R. D., Jan 4 2017, In : Applied Physics Letters. 110, 1, 011105.

Research output: Contribution to journalArticle

17 Scopus citations

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C. & Goodnick, S., Nov 1 2017, In : IEEE Journal of Photovoltaics. 7, 6, p. 1646-1652 7 p., 8068948.

Research output: Contribution to journalArticle

10 Scopus citations

Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

Xie, H., Prioli, R., Torelly, G., Liu, H., Fischer, A. M., Jakomin, R., Mourão, R., Kawabata, R., Pires, M. P., Souza, P. L. & Ponce, F., Apr 12 2017, In : Semiconductor Science and Technology. 32, 5, 055013.

Research output: Contribution to journalArticle

6 Scopus citations

Origin of high hole concentrations in Mg-doped GaN films

Fischer, A. M., Wang, S., Ponce, F., Gunning, B. P., Fabien, C. A. M. & Doolittle, W. A., Aug 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600668.

Research output: Contribution to journalArticle

8 Scopus citations
2016

Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition

Liu, Y. S., Wang, S., Xie, H., Kao, T. T., Mehta, K., Jia, X. J., Shen, S. C., Yoder, P. D., Ponce, F., Detchprohm, T. & Dupuis, R. D., Aug 22 2016, In : Applied Physics Letters. 109, 8, 081103.

Research output: Contribution to journalArticle

12 Scopus citations
2019

Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis

Vadiee, E., Fischer, A. M., Clinton, E. A., McFavilen, H., Patadia, A., Arena, C., Ponce, F. A., King, R. R., Honsberg, C. B. & Doolittle, W. A., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 10, 101003.

Research output: Contribution to journalArticle

Open Access
2014

InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Jakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. & Souza, P. L., Sep 7 2014, In : Journal of Applied Physics. 116, 9, 093511.

Research output: Contribution to journalArticle

12 Scopus citations
2015

Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

Li, X. H., Wang, S., Xie, H., Wei, Y. O., Kao, T. T., Satter, M. M., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Fischer, A. M. & Ponce, F., May 1 2015, In : Physica Status Solidi (B) Basic Research. 252, 5, p. 1089-1095 7 p.

Research output: Contribution to journalArticle

30 Scopus citations
2013

The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M. & Ponce, F., Oct 14 2013, In : Journal of Crystal Growth. 384, p. 55-60 6 p.

Research output: Contribution to journalArticle

2 Scopus citations
2015

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Li, X. H., Kao, T. T., Satter, M. M., Wei, Y. O., Wang, S., Xie, H., Shen, S. C., Yoder, P. D., Fischer, A. M., Ponce, F., Detchprohm, T. & Dupuis, R. D., Jan 26 2015, In : Applied Physics Letters. 106, 4, 041115.

Research output: Contribution to journalArticle

36 Scopus citations

III-nitride deep UV laser on sapphire substrate

Li, X. H., Detchprohm, T., Dupuis, R. D., Kao, T. T., Shen, S. C., Satter, M. M., Yoder, P. D., Wang, S., Wei, Y. O., Xie, H., Fischer, A., Ponce, F., Wernicke, T., Reich, C., Martens, M. & Kneissl, M., Nov 9 2015, 2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc., p. 236-237 2 p. 7323746

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Kim, J., Ji, M. H., Detchprohm, T., Dupuis, R. D., Fischer, A. M., Ponce, F. & Ryou, J. H., Sep 28 2015, In : Journal of Applied Physics. 118, 12, 125303.

Research output: Contribution to journalArticle

6 Scopus citations

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Li, X., Xie, H., Ponce, F., Ryou, J. H., Detchprohm, T. & Dupuis, R. D., Dec 14 2015, In : Applied Physics Letters. 107, 24, 241109.

Research output: Contribution to journalArticle

14 Scopus citations
2014

Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates

Liu, Y. S., Lochner, Z., Kao, T. T., Satter, M. M., Li, X. H., Ryou, J. H., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A. & Ponce, F., Feb 1 2014, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 2, p. 258-260 3 p.

Research output: Contribution to journalArticle

10 Scopus citations
2018

AlGaSb based solar cells grown on GaAs by molecular beam epitaxy

Vadiee, E., Zhang, C., Faleev, N. N., Addamane, S., Wang, S., Ponce, F., Balakrishnan, G. & Honsberg, C., May 25 2018, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

A hybrid concentrating solar thermal/ photovoltaic system using a high temperature III-nitride photovoltaic device

Goodnick, S., Ponce, F., Doolittle, W. A., Honsberg, C., Vasileska, D., Choudhry, S., Arena, C. & Gleckman, P., Nov 25 2014, Optics for Solar Energy, OSE 2014. Optical Society of America (OSA)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Liu, H., Fu, H., Fu, K., Alugubelli, S. R., Su, P. Y., Zhao, Y. & Ponce, F., Feb 25 2019, In : Applied Physics Letters. 114, 8, 082102.

Research output: Contribution to journalArticle

Open Access
3 Scopus citations
2012

Free carrier accumulation at cubic AlGaN/GaN heterojunctions

Wei, Q. Y., Li, T., Huang, J. Y., Ponce, F., Tschumak, E., Zado, A. & As, D. J., Apr 2 2012, In : Applied Physics Letters. 100, 14, 142108.

Research output: Contribution to journalArticle

10 Scopus citations

Early stages of mechanical deformation in indium phosphide with the zinc blende structure

Almeida, C. M., Prioli, R., Wei, Q. Y. & Ponce, F., Sep 15 2012, In : Journal of Applied Physics. 112, 6, 063514.

Research output: Contribution to journalArticle

6 Scopus citations
2013

The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

Huang, J. Y., Ponce, F., Caldas, P. G., Prioli, R. & Almeida, C. M., Nov 28 2013, In : Journal of Applied Physics. 114, 20, 203503.

Research output: Contribution to journalArticle

5 Scopus citations
2011

Plastic hardening in cubic semiconductors by nanoscratching

Caldas, P. G., Prioli, R., Almeida, C. M., Huang, J. Y. & Ponce, F., Jan 1 2011, In : Journal of Applied Physics. 109, 1, 013502.

Research output: Contribution to journalArticle

5 Scopus citations

Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy

Oshima, R., Huang, J. Y., Miyashita, N., Matsubara, K., Okada, Y. & Ponce, F., Nov 7 2011, In : Applied Physics Letters. 99, 19, 191907.

Research output: Contribution to journalArticle

13 Scopus citations