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  • 2020
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  • Fernando Ponce
2020

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Huang, X., Li, D., Su, P. Y., Fu, H., Chen, H., Yang, C., Zhou, J., Qi, X., Yang, T. H., Montes, J., Deng, X., Fu, K., DenBaars, S. P., Nakamura, S., Ponce, F. A., Ning, C. Z. & Zhao, Y., Oct 2020, In : Nano Energy. 76, 105013.

Research output: Contribution to journalArticle

High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

Fu, H., Montes, J., Deng, X., Qi, X., Goodnick, S. M., Ponce, F. A., Zhao, Y., Fu, K., Alugubelli, S. R., Cheng, C. Y., Huang, X., Chen, H., Yang, T. H., Yang, C. & Zhou, J., Jan 2020, In : IEEE Electron Device Letters. 41, 1, p. 127-130 4 p., 8906086.

Research output: Contribution to journalArticle

Investigation of polycrystalline GaxIn1-xP for potential use as a solar cell absorber with tunable bandgap

Chikhalkar, A., Gangopadhyay, A., Liu, H., Zhang, C., Ponce, F. A., Smith, D. J., Honsberg, C. & King, R. R., Feb 21 2020, In : Journal of Applied Physics. 127, 7, 073102.

Research output: Contribution to journalArticle

2019

Corrections to: Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices (IEEE Journal of Quantum Electronics (2018) 54: 4 (2400507) DOI: 10.1109/JQE.2018.2836667)

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Jun 1 2019, In : IEEE Journal of Quantum Electronics. 55, 3, 8684328.

Research output: Contribution to journalComment/debate

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Alugubelli, S. R., Fu, H., Fu, K., Liu, H., Zhao, Y., McCartney, M. R. & Ponce, F. A., Nov 11 2019, In : Applied Physics Letters. 115, 20, 201602.

Research output: Contribution to journalArticle

Open Access

Development for ultraviolet vertical cavity surface emitting lasers

Liu, Y. S., Saniul Haq, A. F. M., Kao, T. T., Mehta, K., Shen, S. C., Detchprohm, T., Douglas Yoder, P., Xie, H., Ponce, F. & Dupuis, R. D., Jan 1 2019, Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015. Optical Society of America (OSA), (Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dopant profiling in p-i-n GaN structures using secondary electrons

Alugubelli, S. R., Fu, H., Fu, K., Liu, H., Zhao, Y. & Ponce, F. A., Jul 7 2019, In : Journal of Applied Physics. 126, 1, 015704.

Research output: Contribution to journalArticle

Open Access
1 Scopus citations

Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga 0.5 In 0.5 P

Su, P. Y., Liu, H., Kawabata, R. M. S., Weiner, E. C., Jakomin, R., Pires, M. P., King, R., Souza, P. L. & Ponce, F., Feb 7 2019, In : Journal of Applied Physics. 125, 5, 053104.

Research output: Contribution to journalArticle

Open Access

Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis

Vadiee, E., Fischer, A. M., Clinton, E. A., McFavilen, H., Patadia, A., Arena, C., Ponce, F. A., King, R. R., Honsberg, C. B. & Doolittle, W. A., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 10, 101003.

Research output: Contribution to journalArticle

Open Access

Identification of point defects using high-resolution electron energy loss spectroscopy

Wang, S., March, K., Ponce, F. & Rez, P., Mar 18 2019, In : Physical Review B. 99, 11, 115312.

Research output: Contribution to journalArticle

2 Scopus citations

Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing

Fu, H., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Montes, J., Yang, T. H., Yang, C., Zhou, J., Ponce, F. A. & Zhao, Y., May 1 2019, In : Applied Physics Express. 12, 5, 051015.

Research output: Contribution to journalArticle

Open Access
3 Scopus citations

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Liu, H., Fu, H., Fu, K., Alugubelli, S. R., Su, P. Y., Zhao, Y. & Ponce, F., Feb 25 2019, In : Applied Physics Letters. 114, 8, 082102.

Research output: Contribution to journalArticle

Open Access
3 Scopus citations

Novel semiconductors for sustainable solar energy technologies

Ponce, F., Mar 14 2019, In : Journal of Physics: Conference Series. 1173, 1, 012001.

Research output: Contribution to journalConference article

Open Access

Optically pumped vertical-cavity surface-emitting lasers at 375 nm with air-gap/Al 0.05 Ga 0.95 N distributed Bragg reflectors

Park, Y. J., Detchprohm, T., Mehta, K., Wang, J., Jeong, H., Liu, Y. S., Chen, P., Wang, S., Shen, S. C., Yoder, P. D., Ponce, F. & Dupuis, R., Jan 1 2019, Vertical-Cavity Surface-Emitting Lasers XXIII. Choquette, K. D. & Graham, L. A. (eds.). SPIE, 109380A. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10938).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2018

AlGaSb based solar cells grown on GaAs by molecular beam epitaxy

Vadiee, E., Zhang, C., Faleev, N. N., Addamane, S., Wang, S., Ponce, F., Balakrishnan, G. & Honsberg, C., May 25 2018, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Swanson, D. E., Reich, C., Abbas, A., Shimpi, T., Liu, H., Ponce, F., Walls, J. M., Zhang, Y-H., Metzger, W. K., Sampath, W. S. & Holman, Z., May 28 2018, In : Journal of Applied Physics. 123, 20, 203101.

Research output: Contribution to journalArticle

9 Scopus citations

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S. R., Vadiee, E., Ponce, F., Arena, C., Honsberg, C. & Goodnick, S., May 25 2018, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-3 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dislocation baskets in thick InxGa1-xN epilayers

Wang, S., Xie, H., Liu, H., Fischer, A. M., McFavilen, H. & Ponce, F., Sep 14 2018, In : Journal of Applied Physics. 124, 10, 105701.

Research output: Contribution to journalArticle

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Weiner, E. C., Jakomin, R., Micha, D. N., Xie, H., Su, P. Y., Pinto, L. D., Pires, M. P., Ponce, F. & Souza, P. L., May 1 2018, In : Solar Energy Materials and Solar Cells. 178, p. 240-248 9 p.

Research output: Contribution to journalArticle

11 Scopus citations

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Fu, K., Fu, H., Liu, H., Alugubelli, S. R., Yang, T. H., Huang, X., Chen, H., Baranowski, I., Montes, J., Ponce, F. & Zhao, Y., Dec 3 2018, In : Applied Physics Letters. 113, 23, 233502.

Research output: Contribution to journalArticle

12 Scopus citations

Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., May 15 2018, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

8 Scopus citations

Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Fu, H., Zhang, X., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Baranowski, I., Yang, T. H., Xu, K., Ponce, F., Zhang, B. & Zhao, Y., Nov 2018, In : Applied Physics Express. 11, 11, 111003.

Research output: Contribution to journalArticle

6 Scopus citations

Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Jan 1 2018, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

4 Scopus citations
2017

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Li, X., Wang, S., Liu, H., Ponce, F., Detchprohm, T. & Dupuis, R. D., Aug 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600699.

Research output: Contribution to journalArticle

20 Scopus citations

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Clinton, E. A., Vadiee, E., Fabien, C. A. M., Moseley, M. W., Gunning, B. P., Doolittle, W. A., Fischer, A. M., Wei, Y. O., Xie, H. & Ponce, F., Oct 2017, In : Solid-State Electronics. 136, p. 3-11 9 p.

Research output: Contribution to journalArticle

11 Scopus citations

Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

Xie, H., Prioli, R., Torelly, G., Liu, H., Fischer, A. M., Jakomin, R., Mourão, R., Kawabata, R., Pires, M. P., Souza, P. L. & Ponce, F., Apr 12 2017, In : Semiconductor Science and Technology. 32, 5, 055013.

Research output: Contribution to journalArticle

6 Scopus citations

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

Wang, S., Li, X., Fischer, A. M., Detchprohm, T., Dupuis, R. D. & Ponce, F., Oct 1 2017, In : Journal of Crystal Growth. 475, p. 334-340 7 p.

Research output: Contribution to journalArticle

8 Scopus citations

Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

Ji, M. H., Liu, Y. S., Kim, J., Park, Y. J., Detchprohm, T., Dupuis, R. D., Kao, T. T., Shen, S. C., Mehta, K., Douglas Yoder, P., Xie, H., Ponce, F., Sood, A., Dhar, N. & Lewis, J., 2017, CLEO: Science and Innovations, CLEO_SI 2017. OSA - The Optical Society, Vol. Part F41-CLEO_SI 2017.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

Ji, M. H., Liu, Y. S., Kim, J., Park, Y. J., Detchprohm, T., Dupuis, R. D., Kao, T. T., Shen, S. C., Mehta, K., Yoder, P. D., Xie, H., Ponce, F., Sood, A., Dhar, N. & Lewis, J., Oct 25 2017, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum

Mehta, K., Detchprohm, T., Park, Y. J., Liu, Y. S., Moreno, O., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Oct 25 2017, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

Microstructure and polarization properties of III-nitride semiconductors

Ponce, F., Jan 1 2017, Handbook of GaN Semiconductor Materials and Devices. CRC Press, p. 53-86 34 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Origin of high hole concentrations in Mg-doped GaN films

Fischer, A. M., Wang, S., Ponce, F., Gunning, B. P., Fabien, C. A. M. & Doolittle, W. A., Aug 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600668.

Research output: Contribution to journalArticle

8 Scopus citations

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

Caldas, P. G., Silva, E. M., Prioli, R., Huang, J. Y., Juday, R., Fischer, A. M. & Ponce, F., Mar 28 2017, In : Journal of Applied Physics. 121, 12, 125105.

Research output: Contribution to journalArticle

7 Scopus citations

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C. & Goodnick, S., Nov 1 2017, In : IEEE Journal of Photovoltaics. 7, 6, p. 1646-1652 7 p., 8068948.

Research output: Contribution to journalArticle

10 Scopus citations

Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air

Zhao, S., Gao, J., Wang, S., Xie, H., Ponce, F., Goodnick, S. & Chowdhury, S., Dec 1 2017, In : Japanese Journal of Applied Physics. 56, 12, 126502.

Research output: Contribution to journalArticle

1 Scopus citations

Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Detchprohm, T., Liu, Y. S., Mehta, K., Wang, S., Xie, H., Kao, T. T., Shen, S. C., Yoder, P. D., Ponce, F. & Dupuis, R. D., Jan 4 2017, In : Applied Physics Letters. 110, 1, 011105.

Research output: Contribution to journalArticle

17 Scopus citations