9.1: Negative electron affinity ultra-nano crystalline diamond based thermionic electron emitters for low to moderate temperature operation

Franz A M Koeck; Tianyin Sun; Robert Nemanich

doi:10.1109/IVNC.2010.5563195

9.1: Negative electron affinity ultra-nano crystalline diamond based thermionic electron emitters for low to moderate temperature operation

Franz A M Koeck, Tianyin Sun, Robert Nemanich

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Diamond based electron sources utilize two key materials properties presenting a method of efficient electron emission. Negative electron affinity (NEA) characteristics of diamond surfaces, where the vacuum level is positioned below the conduction band minimum eliminates the surface emission barrier. With suitable dopants, an electronic band configuration can be achieved resulting in a low effective work function. We have prepared nitrogen-doped diamond emitter structures by plasma assisted chemical vapor deposition. These materials exhibit a low effective work function of about 1.3 eV with detectable thermionic electron emission at temperatures lower than 250°C.

Original language	English (US)
Title of host publication	23rd International Vacuum Nanoelectronics Conference, IVNC 2010
Pages	187-188
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2010.5563195
State	Published - Oct 29 2010
Event	23rd International Vacuum Nanoelectronics Conference, IVNC 2010 - Palo Alto, CA, United States Duration: Jul 26 2010 → Jul 30 2010

Publication series

Name	23rd International Vacuum Nanoelectronics Conference, IVNC 2010

Other

Other	23rd International Vacuum Nanoelectronics Conference, IVNC 2010
Country/Territory	United States
City	Palo Alto, CA
Period	7/26/10 → 7/30/10

Keywords

Chemical vapor deposition
Diamond
Thermionic emission

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2010.5563195

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Koeck, F. A. M., Sun, T., & Nemanich, R. (2010). 9.1: Negative electron affinity ultra-nano crystalline diamond based thermionic electron emitters for low to moderate temperature operation. In 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 (pp. 187-188). Article 5563195 (23rd International Vacuum Nanoelectronics Conference, IVNC 2010). https://doi.org/10.1109/IVNC.2010.5563195

9.1: Negative electron affinity ultra-nano crystalline diamond based thermionic electron emitters for low to moderate temperature operation. / Koeck, Franz A M; Sun, Tianyin; Nemanich, Robert.
23rd International Vacuum Nanoelectronics Conference, IVNC 2010. 2010. p. 187-188 5563195 (23rd International Vacuum Nanoelectronics Conference, IVNC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koeck, FAM, Sun, T & Nemanich, R 2010, 9.1: Negative electron affinity ultra-nano crystalline diamond based thermionic electron emitters for low to moderate temperature operation. in 23rd International Vacuum Nanoelectronics Conference, IVNC 2010., 5563195, 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, pp. 187-188, 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, Palo Alto, CA, United States, 7/26/10. https://doi.org/10.1109/IVNC.2010.5563195

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abstract = "Diamond based electron sources utilize two key materials properties presenting a method of efficient electron emission. Negative electron affinity (NEA) characteristics of diamond surfaces, where the vacuum level is positioned below the conduction band minimum eliminates the surface emission barrier. With suitable dopants, an electronic band configuration can be achieved resulting in a low effective work function. We have prepared nitrogen-doped diamond emitter structures by plasma assisted chemical vapor deposition. These materials exhibit a low effective work function of about 1.3 eV with detectable thermionic electron emission at temperatures lower than 250°C.",

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AB - Diamond based electron sources utilize two key materials properties presenting a method of efficient electron emission. Negative electron affinity (NEA) characteristics of diamond surfaces, where the vacuum level is positioned below the conduction band minimum eliminates the surface emission barrier. With suitable dopants, an electronic band configuration can be achieved resulting in a low effective work function. We have prepared nitrogen-doped diamond emitter structures by plasma assisted chemical vapor deposition. These materials exhibit a low effective work function of about 1.3 eV with detectable thermionic electron emission at temperatures lower than 250°C.

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9.1: Negative electron affinity ultra-nano crystalline diamond based thermionic electron emitters for low to moderate temperature operation

Abstract

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Keywords

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