5GHz low-phase-noise oscillator based on FBAR with low TCF

Hao Zhang, Jongjin Kim, Wei Pang, Hongyu Yu, Eun Sok Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations

Abstract

A 5GHz oscillator with phase noise of -109.5 dBc/Hz at 100kHz offset (more than 10 dBc/Hz better than the best LC oscillator and 4 dBc/Hz better than the best value reported in the literature) has recently been demonstrated with a 5 GHz Al/ZnO/Al/SiO2 FBAR (film bulk acoustic resonator). The 5 GHz FBAR is fabricated through a simple, clean, and CMOS-compatible fabrication process, and is measured to have Q of about 300, Kt2 of 4.3% and TCF (temperature coefficient of frequency) of-8.7ppm/°C between 25 and 100°C.

Original languageEnglish (US)
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages1100-1101
Number of pages2
StatePublished - Nov 9 2005
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: Jun 5 2005Jun 9 2005

Publication series

NameDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume1

Other

Other13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
CountryKorea, Republic of
CitySeoul
Period6/5/056/9/05

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Zhang, H., Kim, J., Pang, W., Yu, H., & Kim, E. S. (2005). 5GHz low-phase-noise oscillator based on FBAR with low TCF. In TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers (pp. 1100-1101). [2E4.161] (Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05; Vol. 1).