TY - GEN
T1 - 5GHz low-phase-noise oscillator based on FBAR with low TCF
AU - Zhang, Hao
AU - Kim, Jongjin
AU - Pang, Wei
AU - Yu, Hongyu
AU - Kim, Eun Sok
PY - 2005
Y1 - 2005
N2 - A 5GHz oscillator with phase noise of -109.5 dBc/Hz at 100kHz offset (more than 10 dBc/Hz better than the best LC oscillator and 4 dBc/Hz better than the best value reported in the literature) has recently been demonstrated with a 5 GHz Al/ZnO/Al/SiO2 FBAR (film bulk acoustic resonator). The 5 GHz FBAR is fabricated through a simple, clean, and CMOS-compatible fabrication process, and is measured to have Q of about 300, Kt2 of 4.3% and TCF (temperature coefficient of frequency) of-8.7ppm/°C between 25 and 100°C.
AB - A 5GHz oscillator with phase noise of -109.5 dBc/Hz at 100kHz offset (more than 10 dBc/Hz better than the best LC oscillator and 4 dBc/Hz better than the best value reported in the literature) has recently been demonstrated with a 5 GHz Al/ZnO/Al/SiO2 FBAR (film bulk acoustic resonator). The 5 GHz FBAR is fabricated through a simple, clean, and CMOS-compatible fabrication process, and is measured to have Q of about 300, Kt2 of 4.3% and TCF (temperature coefficient of frequency) of-8.7ppm/°C between 25 and 100°C.
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M3 - Conference contribution
AN - SCOPUS:27544438281
SN - 0780389948
T3 - Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
SP - 1100
EP - 1101
BT - TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
T2 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Y2 - 5 June 2005 through 9 June 2005
ER -