Abstract

This article describes 40V N-channel MESFETs fabricated at a commercial 32nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. The 32nm technology node is the most advanced technology node to date for MESFET fabrication and builds upon previous work completed at other process nodes. High voltage MESFETs were measured with current drives of 110mA/mm. The devices are suitable for RF development and have peak cut-off frequency, fT, of 30.5GHz and maximum oscillation frequency, f max, of 34.5GHz.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781467361460
DOIs
StatePublished - Nov 7 2013
Event35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013 - San Jose, CA, United States
Duration: Sep 22 2013Sep 25 2013

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Other

Other35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013
CountryUnited States
CitySan Jose, CA
Period9/22/139/25/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lepkowski, W., Wilk, S. J., Kam, J., & Thornton, T. (2013). 40V MESFETs fabricated on 32nm SOI CMOS. In Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013 [6658399] (Proceedings of the Custom Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC.2013.6658399