3D simulations of ultra-small MOSFETs

The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics

W. J. Gross, Dragica Vasileska, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed a three-dimensional particle based simulator with a coupled molecular dynamics routine that avoids the "double-counting" of the long-range portion of the Coulomb force. As opposed to drift-diffusion based simulators, the Monte Carlo simulator can accurately model high field transport in semiconductor devices, while enabling the real-space treatment of the interactions, including multi-ion and particle contributions, through the coupled molecular dynamics scheme. The inclusion of the electron-electron and electron-ion interactions was shown to play an important role in device simulations. The drain current for MOSFET devices was significantly decreased when the Coulomb forces were added. Using this simulator, random dopant ions in the channel have shown to create fluctuations in the drain current of deep sub-micron MOSFETS as well as fluctuations in the device threshold voltage.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages469-472
Number of pages4
StatePublished - 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
CountryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Fingerprint

Coulomb interactions
Simulators
Impurities
Drain current
Molecular dynamics
Electrons
Ions
MOSFET devices
Semiconductor devices
Threshold voltage
Doping (additives)

Keywords

  • Discrete impurity effects
  • High-field transport
  • Threshold voltage fluctuations
  • Ultra-small MOSFETs

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gross, W. J., Vasileska, D., & Ferry, D. K. (2000). 3D simulations of ultra-small MOSFETs: The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics. In M. Laudon, & B. Romanowicz (Eds.), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 (pp. 469-472)

3D simulations of ultra-small MOSFETs : The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics. / Gross, W. J.; Vasileska, Dragica; Ferry, D. K.

2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. ed. / M. Laudon; B. Romanowicz. 2000. p. 469-472.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gross, WJ, Vasileska, D & Ferry, DK 2000, 3D simulations of ultra-small MOSFETs: The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics. in M Laudon & B Romanowicz (eds), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. pp. 469-472, 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000, San Diego, CA, United States, 3/27/00.
Gross WJ, Vasileska D, Ferry DK. 3D simulations of ultra-small MOSFETs: The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics. In Laudon M, Romanowicz B, editors, 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. 2000. p. 469-472
Gross, W. J. ; Vasileska, Dragica ; Ferry, D. K. / 3D simulations of ultra-small MOSFETs : The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics. 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. editor / M. Laudon ; B. Romanowicz. 2000. pp. 469-472
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