3D simulation of GaAs/AlGaAs quantum dot point contact structures

Dragica Vasileska, M. N. Wybourne, Stephen Goodnick, A. D. Gunther

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We present simulation results for the activation barrier φ0 and the number of electrons N in a quantum dot structure that are obtained from the self-consistent solution of the 3D Schrödinger-Poisson problem. We observe an approximately linear rise in the electrostatic barrier φ0 as a function of the gate bias once pinchoff occurs. There is an associated linear decrease in the number of the electrons in the dot region. Calculated values of φ0 and N are in an agreement with those utilized in the energy balance analysis for similar structure investigated experimentally in connection with negative conductance behaviour. The simulation results also suggest that, if the dot area is too small, all particles may be depleted from the dot before the input and output barrier forms, thus preventing the bistable operation.

Original languageEnglish (US)
Pages (from-to)A37-A40
JournalSemiconductor Science and Technology
Volume13
Issue number8 SUPPL. A
DOIs
StatePublished - Jan 1 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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