3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

Fing Rong Zhou; David K. Ferry

doi:10.1109/99.388952

3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

Fing Rong Zhou, David K. Ferry

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	30-37
Number of pages	8
Journal	IEEE Computational Science and Engineering
Volume	2
Issue number	2
DOIs	https://doi.org/10.1109/99.388952
State	Published - 1995

ASJC Scopus subject areas

General Engineering

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10.1109/99.388952

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title = "3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance",

author = "Zhou, {Fing Rong} and Ferry, {David K.}",

note = "Funding Information: This work IS supported by the US Office of Naval Research.",

year = "1995",

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language = "English (US)",

volume = "2",

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journal = "IEEE Computational Science and Engineering",

issn = "1070-9924",

publisher = "IEEE Computer Society",

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TY - JOUR

T1 - 3D Simulation of Deep-Submicron Devices

T2 - How Impurity Atoms Affect Conductance

AU - Zhou, Fing Rong

AU - Ferry, David K.

N1 - Funding Information: This work IS supported by the US Office of Naval Research.

PY - 1995

Y1 - 1995

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DO - 10.1109/99.388952

M3 - Article

AN - SCOPUS:0029326694

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VL - 2

SP - 30

EP - 37

JO - IEEE Computational Science and Engineering

JF - IEEE Computational Science and Engineering

IS - 2

ER -

3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

ASJC Scopus subject areas

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