3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

Fing Rong Zhou; David K. Ferry

doi:10.1109/99.388952

3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

Fing Rong Zhou, David K. Ferry

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	30-37
Number of pages	8
Journal	IEEE Computational Science and Engineering
Volume	2
Issue number	2
DOIs	https://doi.org/10.1109/99.388952
State	Published - 1995

ASJC Scopus subject areas

Engineering(all)

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10.1109/99.388952

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title = "3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance",

author = "Zhou, {Fing Rong} and Ferry, {David K.}",

note = "Funding Information: This work IS supported by the US Office of Naval Research.",

year = "1995",

doi = "10.1109/99.388952",

language = "English (US)",

volume = "2",

pages = "30--37",

journal = "Computing in Science and Engineering",

issn = "1521-9615",

publisher = "IEEE Computer Society",

number = "2",

}

TY - JOUR

T1 - 3D Simulation of Deep-Submicron Devices

T2 - How Impurity Atoms Affect Conductance

AU - Zhou, Fing Rong

AU - Ferry, David K.

N1 - Funding Information: This work IS supported by the US Office of Naval Research.

PY - 1995

Y1 - 1995

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U2 - 10.1109/99.388952

DO - 10.1109/99.388952

M3 - Article

AN - SCOPUS:0029326694

SN - 1521-9615

VL - 2

SP - 30

EP - 37

JO - Computing in Science and Engineering

JF - Computing in Science and Engineering

IS - 2

ER -

3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

ASJC Scopus subject areas

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