3D parallel Monte Carlo simulation of GaAs MESFETs

S. Pennathur, Can K. Sandalci, Çetin K. Koç, S. M. Goodnick

Research output: Contribution to journalArticle

Abstract

We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.

Original languageEnglish (US)
Pages (from-to)273-276
Number of pages4
JournalVLSI Design
Volume6
Issue number1-4
DOIs
StatePublished - Jan 1 1998
Externally publishedYes

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Keywords

  • Device simulation
  • Monte Carlo
  • Multiprocessor
  • Parallel computing
  • Transport

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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