3D parallel Monte Carlo simulation of GaAs MESFETs

S. Pennathur; Can K. Sandalci; Çetin K. Koç; S. M. Goodnick

doi:10.1155/1998/64531

3D parallel Monte Carlo simulation of GaAs MESFETs

S. Pennathur, Can K. Sandalci, Çetin K. Koç, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.

Original language	English (US)
Pages (from-to)	273-276
Number of pages	4
Journal	VLSI Design
Volume	6
Issue number	1-4
DOIs	https://doi.org/10.1155/1998/64531
State	Published - 1998
Externally published	Yes

Keywords

Device simulation
Monte Carlo
Multiprocessor
Parallel computing
Transport

ASJC Scopus subject areas

Hardware and Architecture
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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10.1155/1998/64531

Cite this

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title = "3D parallel Monte Carlo simulation of GaAs MESFETs",

abstract = "We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.",

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T1 - 3D parallel Monte Carlo simulation of GaAs MESFETs

AU - Pennathur, S.

AU - Sandalci, Can K.

AU - Koç, Çetin K.

AU - Goodnick, S. M.

PY - 1998

Y1 - 1998

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AB - We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.

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KW - Monte Carlo

KW - Multiprocessor

KW - Parallel computing

KW - Transport

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ER -

3D parallel Monte Carlo simulation of GaAs MESFETs

Abstract

Keywords

ASJC Scopus subject areas

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