Abstract
We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 273-276 |
| Number of pages | 4 |
| Journal | VLSI Design |
| Volume | 6 |
| Issue number | 1-4 |
| State | Published - 1998 |
| Externally published | Yes |
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Keywords
- Device simulation
- Monte Carlo
- Multiprocessor
- Parallel computing
- Transport
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture
Cite this
3D parallel Monte Carlo simulation of GaAs MESFETs. / Pennathur, S.; Sandalci, Can K.; Koç, Çetin K.; Goodnick, Stephen.
In: VLSI Design, Vol. 6, No. 1-4, 1998, p. 273-276.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 3D parallel Monte Carlo simulation of GaAs MESFETs
AU - Pennathur, S.
AU - Sandalci, Can K.
AU - Koç, Çetin K.
AU - Goodnick, Stephen
PY - 1998
Y1 - 1998
N2 - We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.
AB - We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.
KW - Device simulation
KW - Monte Carlo
KW - Multiprocessor
KW - Parallel computing
KW - Transport
UR - http://www.scopus.com/inward/record.url?scp=0031624883&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031624883&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031624883
VL - 6
SP - 273
EP - 276
JO - VLSI Design
JF - VLSI Design
SN - 1065-514X
IS - 1-4
ER -