@article{813e85b0b89442b2b0401af4e461922e,
title = "3D parallel Monte Carlo simulation of GaAs MESFETs",
abstract = "We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.",
keywords = "Device simulation, Monte Carlo, Multiprocessor, Parallel computing, Transport",
author = "S. Pennathur and Sandalci, {Can K.} and Ko{\c c}, {{\c C}etin K.} and Goodnick, {S. M.}",
note = "Funding Information: Pennathur S. Sandalci Can K. Ko{\c c} {\c C}etin K. Goodnick S. M. Department of Electrical and Computer Engineering Oregon State University Corvallis, OR 97331 USA oregonstate.edu 1998 6 1-4 273 276 1998 Copyright {\textcopyright} 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. This is an open access article distributed under the Creative Commons Attribution License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained. Device Simulation Monte Carlo Multiprocessor Transport Parallel Computing. http://dx.doi.org/10.13039/501100001809 National Natural Science Foundation of China ECS-9312240 ",
year = "1998",
doi = "10.1155/1998/64531",
language = "English (US)",
volume = "6",
pages = "273--276",
journal = "VLSI Design",
issn = "1065-514X",
publisher = "Hindawi Publishing Corporation",
number = "1-4",
}