TY - JOUR
T1 - 3D out-of-plane rotational etching with pinned catalysts in metal-assisted chemical etching of silicon
AU - Hildreth, Owen J.
AU - Brown, Devin
AU - Wong, Ching P.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/8/23
Y1 - 2011/8/23
N2 - Pinned structures in conjunction with shaped catalysts are used in metal-assisted chemical etching (MACE) of silicon to induce out-of-plane rotational etching. Sub-micro- and nanostructures are fabricated in silicon, which include scooped-out channels and curved subsurface horns, along with vertically oriented thin metal structures. Five different etching modes induced by catalyst and pinning geometry are identified: 1) fully pinned-no etching, 2) rotation via twist, 3) rotation via delamination, 4) in-plane bending, and 5) swinging. The rotation angle is roughly controlled through catalyst geometry. The force and pressure experienced by the catalyst are calculated from the deformation of the catalyst and range between 0.5-3.5 μN and 0.5-3.9 MPa, respectively. This is a new, simple method to fabricate 3D, heterogeneous sub-micro- and nanostructures in silicon with high feature fidelity on the order of tens of nanometers while providing a method to measure the forces responsible for catalyst motion during MACE.
AB - Pinned structures in conjunction with shaped catalysts are used in metal-assisted chemical etching (MACE) of silicon to induce out-of-plane rotational etching. Sub-micro- and nanostructures are fabricated in silicon, which include scooped-out channels and curved subsurface horns, along with vertically oriented thin metal structures. Five different etching modes induced by catalyst and pinning geometry are identified: 1) fully pinned-no etching, 2) rotation via twist, 3) rotation via delamination, 4) in-plane bending, and 5) swinging. The rotation angle is roughly controlled through catalyst geometry. The force and pressure experienced by the catalyst are calculated from the deformation of the catalyst and range between 0.5-3.5 μN and 0.5-3.9 MPa, respectively. This is a new, simple method to fabricate 3D, heterogeneous sub-micro- and nanostructures in silicon with high feature fidelity on the order of tens of nanometers while providing a method to measure the forces responsible for catalyst motion during MACE.
KW - electron-beam lithography
KW - metal-assisted chemical etching
KW - nanofabrication
KW - silicon
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U2 - 10.1002/adfm.201100279
DO - 10.1002/adfm.201100279
M3 - Article
AN - SCOPUS:80051733389
SN - 1616-301X
VL - 21
SP - 3119
EP - 3128
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 16
ER -