3D Monte Carlo simulation of FinFET using FMM algorithm

Hasanur Rahman Khan, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The use of FMM algorithms for 3D Monte Carlo simulation of FinFET was analyzed. FinFET devices have been simulated with S/D doping of 10 19/cm 3 and fin doping of 10 16/cm 3. The relative position of the gate with respect to S/D, called fin extension, plays a significant role in controlling the device performance. It is important to note that the amount of velocity overshoot that one observes in this device structure depends upon the choice of the fin dimensions and the contact material used.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages192-193
Number of pages2
StatePublished - Dec 1 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

ASJC Scopus subject areas

  • Engineering(all)

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