TY - GEN
T1 - 3D Monte Carlo simulation of FinFET using FMM algorithm
AU - Khan, Hasanur Rahman
AU - Vasileska, Dragica
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The use of FMM algorithms for 3D Monte Carlo simulation of FinFET was analyzed. FinFET devices have been simulated with S/D doping of 10 19/cm 3 and fin doping of 10 16/cm 3. The relative position of the gate with respect to S/D, called fin extension, plays a significant role in controlling the device performance. It is important to note that the amount of velocity overshoot that one observes in this device structure depends upon the choice of the fin dimensions and the contact material used.
AB - The use of FMM algorithms for 3D Monte Carlo simulation of FinFET was analyzed. FinFET devices have been simulated with S/D doping of 10 19/cm 3 and fin doping of 10 16/cm 3. The relative position of the gate with respect to S/D, called fin extension, plays a significant role in controlling the device performance. It is important to note that the amount of velocity overshoot that one observes in this device structure depends upon the choice of the fin dimensions and the contact material used.
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M3 - Conference contribution
AN - SCOPUS:21844457431
SN - 0780386493
SN - 9780780386495
T3 - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
SP - 192
EP - 193
BT - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
T2 - 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
Y2 - 24 October 2004 through 27 October 2004
ER -