TY - JOUR
T1 - 3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions
AU - Heitzinger, Clemens
AU - Ringhofer, Christian
AU - Ahmed, Shaikh
AU - Vasileska, Dragica
N1 - Funding Information:
Acknowledgments The authors acknowledge support by the Austrian Science Fund (Fonds zur Förderung der wissenschaftlichen Forschung, FWF) and through National Science Foundation grant DECS-0218008.
PY - 2007/9
Y1 - 2007/9
N2 - Effective quantum potentials describe the physics of quantum-mechanical electron transport in semiconductors more than the classical Coulomb potential. An effective quantum potential was derived previously for the interaction of an electron with a barrier for use in particle-based Monte Carlo semiconductor device simulators. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy and which is parameter-free. Here we extend the method to electron-electron interactions and show how the effective quantum potential can be evaluated efficiently in the context of many-body problems. The effective quantum potential was used in a three-dimensional Monte-Carlo device simulator for calculating the electron-electron and electron-barrier interactions. Simulation results for an SOI transistor are presented and illustrate how the effective quantum potential changes the characteristics compared to the classical potential.
AB - Effective quantum potentials describe the physics of quantum-mechanical electron transport in semiconductors more than the classical Coulomb potential. An effective quantum potential was derived previously for the interaction of an electron with a barrier for use in particle-based Monte Carlo semiconductor device simulators. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy and which is parameter-free. Here we extend the method to electron-electron interactions and show how the effective quantum potential can be evaluated efficiently in the context of many-body problems. The effective quantum potential was used in a three-dimensional Monte-Carlo device simulator for calculating the electron-electron and electron-barrier interactions. Simulation results for an SOI transistor are presented and illustrate how the effective quantum potential changes the characteristics compared to the classical potential.
KW - Effective quantum potential
KW - Electron-electron interactions
KW - Monte-Carlo simulation
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U2 - 10.1007/s10825-006-0058-x
DO - 10.1007/s10825-006-0058-x
M3 - Article
AN - SCOPUS:34247325467
SN - 1569-8025
VL - 6
SP - 15
EP - 18
JO - Journal of Computational Electronics
JF - Journal of Computational Electronics
IS - 1-3
ER -