3D modeling of silicon quantum dots

S. N. Miličić; F. Badrieh; Dragica Vasileska; A. Gunther; Stephen Goodnick

doi:10.1006/spmi.2000.0845

3D modeling of silicon quantum dots

S. N. Miličić, F. Badrieh, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

Original language	English (US)
Pages (from-to)	377-382
Number of pages	6
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0845
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0845

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title = "3D modeling of silicon quantum dots",

abstract = "We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.",

author = "Mili{\v c}i{\'c}, {S. N.} and F. Badrieh and Dragica Vasileska and A. Gunther and Stephen Goodnick",

note = "Funding Information: Acknowledgement—This work has been supported in part by the Office of Naval Research under Contract Nos N00014-98-1-0594 and N00014-99-1-0318.; 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

year = "2000",

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doi = "10.1006/spmi.2000.0845",

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T1 - 3D modeling of silicon quantum dots

AU - Miličić, S. N.

AU - Badrieh, F.

AU - Vasileska, Dragica

AU - Gunther, A.

AU - Goodnick, Stephen

N1 - Funding Information: Acknowledgement—This work has been supported in part by the Office of Naval Research under Contract Nos N00014-98-1-0594 and N00014-99-1-0318.

PY - 2000/5

Y1 - 2000/5

N2 - We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

AB - We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

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U2 - 10.1006/spmi.2000.0845

DO - 10.1006/spmi.2000.0845

M3 - Conference article

AN - SCOPUS:0343536441

SN - 0749-6036

VL - 27

SP - 377

EP - 382

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

3D modeling of silicon quantum dots

Abstract

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