3D modeling of silicon quantum dots

S. N. Miličić, F. Badrieh, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

Original languageEnglish (US)
Pages (from-to)377-382
Number of pages6
JournalSuperlattices and Microstructures
Volume27
Issue number5
DOIs
Publication statusPublished - May 2000

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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