3D modeling of silicon quantum dots

S. N. Miličić, F. Badrieh, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

Original languageEnglish (US)
Pages (from-to)377-382
Number of pages6
JournalSuperlattices and Microstructures
Volume27
Issue number5
DOIs
StatePublished - May 2000

Fingerprint

Silicon
Wave functions
Fermi level
Electron energy levels
Semiconductor quantum dots
quantum dots
Impurities
Semiconductor materials
Electrons
silicon
depletion
energy spectra
energy levels
impurities
electrons
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

3D modeling of silicon quantum dots. / Miličić, S. N.; Badrieh, F.; Vasileska, Dragica; Gunther, A.; Goodnick, Stephen.

In: Superlattices and Microstructures, Vol. 27, No. 5, 05.2000, p. 377-382.

Research output: Contribution to journalArticle

Miličić, S. N. ; Badrieh, F. ; Vasileska, Dragica ; Gunther, A. ; Goodnick, Stephen. / 3D modeling of silicon quantum dots. In: Superlattices and Microstructures. 2000 ; Vol. 27, No. 5. pp. 377-382.
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