3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects

S. N. Miličić, R. Akis, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journalArticle

Abstract

We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.

Original languageEnglish (US)
Pages (from-to)461-467
Number of pages7
JournalSuperlattices and Microstructures
Volume28
Issue number5-6
DOIs
StatePublished - Nov 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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