Abstract
We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 461-467 |
| Number of pages | 7 |
| Journal | Superlattices and Microstructures |
| Volume | 28 |
| Issue number | 5-6 |
| DOIs | |
| State | Published - Nov 2000 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Miličić, S. N., Akis, R., Vasileska, D., Gunther, A., & Goodnick, S. (2000). 3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects. Superlattices and Microstructures, 28(5-6), 461-467. https://doi.org/10.1006/spmi.2000.0949