3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects

S. N. Miličić, R. Akis, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journalArticle

Abstract

We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.

Original languageEnglish (US)
Pages (from-to)461-467
Number of pages7
JournalSuperlattices and Microstructures
Volume28
Issue number5-6
DOIs
StatePublished - Nov 2000

Fingerprint

Poisson equation
Silicon
Chaos theory
Electron energy levels
Semiconductor quantum dots
energy levels
quantum dots
spacing
Impurities
impurities
silicon
chaos
indication
energy spectra
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

3D modeling of discrete impurity effects in silicon quantum dots : energy level spacing and scarring effects. / Miličić, S. N.; Akis, R.; Vasileska, Dragica; Gunther, A.; Goodnick, Stephen.

In: Superlattices and Microstructures, Vol. 28, No. 5-6, 11.2000, p. 461-467.

Research output: Contribution to journalArticle

@article{04e3e7262109468386fd1a2e0a97669e,
title = "3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects",
abstract = "We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.",
author = "Miličić, {S. N.} and R. Akis and Dragica Vasileska and A. Gunther and Stephen Goodnick",
year = "2000",
month = "11",
doi = "10.1006/spmi.2000.0949",
language = "English (US)",
volume = "28",
pages = "461--467",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "5-6",

}

TY - JOUR

T1 - 3D modeling of discrete impurity effects in silicon quantum dots

T2 - energy level spacing and scarring effects

AU - Miličić, S. N.

AU - Akis, R.

AU - Vasileska, Dragica

AU - Gunther, A.

AU - Goodnick, Stephen

PY - 2000/11

Y1 - 2000/11

N2 - We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.

AB - We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.

UR - http://www.scopus.com/inward/record.url?scp=0342973194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342973194&partnerID=8YFLogxK

U2 - 10.1006/spmi.2000.0949

DO - 10.1006/spmi.2000.0949

M3 - Article

AN - SCOPUS:0342973194

VL - 28

SP - 461

EP - 467

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 5-6

ER -