3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects

S. N. Miličić; R. Akis; Dragica Vasileska; A. Gunther; Stephen Goodnick

doi:10.1006/spmi.2000.0949

3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects

S. N. Miličić, R. Akis, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journal › Article › peer-review

Abstract

We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.

Original language	English (US)
Pages (from-to)	461-467
Number of pages	7
Journal	Superlattices and Microstructures
Volume	28
Issue number	5-6
DOIs	https://doi.org/10.1006/spmi.2000.0949
State	Published - Nov 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We present simulation results obtained using a 3D coupled Schrodinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.",

author = "Mili{\v c}i{\'c}, {S. N.} and R. Akis and Dragica Vasileska and A. Gunther and Stephen Goodnick",

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AU - Gunther, A.

AU - Goodnick, Stephen

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