Abstract

A silicon metal-semiconductor-field-effect-transistor (MESFET) power amplifier operating at 900 MHz fabricated on a 45 nm silicon-on-insulator CMOS process with no changes to the process flow is presented. The soft breakdown of the MESFET is 20 times that of the MOSFET and allowed a single transistor amplifier based on Class A bias conditions to operate at up to 32 dBm output power with an 8 V drain bias. The amplifier had a peak power added efficiency of 37.6%, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The device required only 0.125 mm2 of active area. Additionally, the depletion mode operation of the MESFET enables a simple input bias approach using an inductor to ground at the gate of the device.

Original languageEnglish (US)
Article number6469182
Pages (from-to)161-163
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume23
Issue number3
DOIs
StatePublished - 2013

Fingerprint

MESFET devices
SOI (semiconductors)
power amplifiers
Power amplifiers
CMOS
field effect transistors
transistor amplifiers
Silicon
metals
output
Transistors
silicon
power efficiency
inductors
depletion
amplifiers
breakdown
insulators

Keywords

  • Metal-semiconductor-field-effect- transistor (MESFET)
  • power amplifiers (PAs)
  • silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

32 dBm power amplifier on 45 nm SOI CMOS. / Wilk, Seth J.; Lepkowski, William; Thornton, Trevor.

In: IEEE Microwave and Wireless Components Letters, Vol. 23, No. 3, 6469182, 2013, p. 161-163.

Research output: Contribution to journalArticle

Wilk, Seth J. ; Lepkowski, William ; Thornton, Trevor. / 32 dBm power amplifier on 45 nm SOI CMOS. In: IEEE Microwave and Wireless Components Letters. 2013 ; Vol. 23, No. 3. pp. 161-163.
@article{5c2fd760781b46a89f738fba67bcd47e,
title = "32 dBm power amplifier on 45 nm SOI CMOS",
abstract = "A silicon metal-semiconductor-field-effect-transistor (MESFET) power amplifier operating at 900 MHz fabricated on a 45 nm silicon-on-insulator CMOS process with no changes to the process flow is presented. The soft breakdown of the MESFET is 20 times that of the MOSFET and allowed a single transistor amplifier based on Class A bias conditions to operate at up to 32 dBm output power with an 8 V drain bias. The amplifier had a peak power added efficiency of 37.6{\%}, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The device required only 0.125 mm2 of active area. Additionally, the depletion mode operation of the MESFET enables a simple input bias approach using an inductor to ground at the gate of the device.",
keywords = "Metal-semiconductor-field-effect- transistor (MESFET), power amplifiers (PAs), silicon-on-insulator (SOI) technology",
author = "Wilk, {Seth J.} and William Lepkowski and Trevor Thornton",
year = "2013",
doi = "10.1109/LMWC.2013.2245413",
language = "English (US)",
volume = "23",
pages = "161--163",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - 32 dBm power amplifier on 45 nm SOI CMOS

AU - Wilk, Seth J.

AU - Lepkowski, William

AU - Thornton, Trevor

PY - 2013

Y1 - 2013

N2 - A silicon metal-semiconductor-field-effect-transistor (MESFET) power amplifier operating at 900 MHz fabricated on a 45 nm silicon-on-insulator CMOS process with no changes to the process flow is presented. The soft breakdown of the MESFET is 20 times that of the MOSFET and allowed a single transistor amplifier based on Class A bias conditions to operate at up to 32 dBm output power with an 8 V drain bias. The amplifier had a peak power added efficiency of 37.6%, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The device required only 0.125 mm2 of active area. Additionally, the depletion mode operation of the MESFET enables a simple input bias approach using an inductor to ground at the gate of the device.

AB - A silicon metal-semiconductor-field-effect-transistor (MESFET) power amplifier operating at 900 MHz fabricated on a 45 nm silicon-on-insulator CMOS process with no changes to the process flow is presented. The soft breakdown of the MESFET is 20 times that of the MOSFET and allowed a single transistor amplifier based on Class A bias conditions to operate at up to 32 dBm output power with an 8 V drain bias. The amplifier had a peak power added efficiency of 37.6%, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The device required only 0.125 mm2 of active area. Additionally, the depletion mode operation of the MESFET enables a simple input bias approach using an inductor to ground at the gate of the device.

KW - Metal-semiconductor-field-effect- transistor (MESFET)

KW - power amplifiers (PAs)

KW - silicon-on-insulator (SOI) technology

UR - http://www.scopus.com/inward/record.url?scp=84874999380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874999380&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2013.2245413

DO - 10.1109/LMWC.2013.2245413

M3 - Article

AN - SCOPUS:84874999380

VL - 23

SP - 161

EP - 163

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 3

M1 - 6469182

ER -