Abstract

A silicon metal-semiconductor-field-effect-transistor (MESFET) power amplifier operating at 900 MHz fabricated on a 45 nm silicon-on-insulator CMOS process with no changes to the process flow is presented. The soft breakdown of the MESFET is 20 times that of the MOSFET and allowed a single transistor amplifier based on Class A bias conditions to operate at up to 32 dBm output power with an 8 V drain bias. The amplifier had a peak power added efficiency of 37.6%, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The device required only 0.125 mm2 of active area. Additionally, the depletion mode operation of the MESFET enables a simple input bias approach using an inductor to ground at the gate of the device.

Original languageEnglish (US)
Article number6469182
Pages (from-to)161-163
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume23
Issue number3
DOIs
StatePublished - Feb 28 2013

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Keywords

  • Metal-semiconductor-field-effect- transistor (MESFET)
  • power amplifiers (PAs)
  • silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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