30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique

Yuji Zhao, Junichi Sonoda, Chih Chien Pan, Stuart Brinkley, Ingrid Koslow, Kenji Fujito, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.

Original languageEnglish (US)
Article number102101
JournalApplied Physics Express
Volume3
Issue number10
DOIs
StatePublished - Oct 2010
Externally publishedYes

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Light emitting diodes
light emitting diodes
chips
output
Periodic structures
Quantum efficiency
microbalances
quantum efficiency
Materials properties
Substrates
Processing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique. / Zhao, Yuji; Sonoda, Junichi; Pan, Chih Chien; Brinkley, Stuart; Koslow, Ingrid; Fujito, Kenji; Ohta, Hiroaki; DenBaars, Steven P.; Nakamura, Shuji.

In: Applied Physics Express, Vol. 3, No. 10, 102101, 10.2010.

Research output: Contribution to journalArticle

Zhao, Yuji ; Sonoda, Junichi ; Pan, Chih Chien ; Brinkley, Stuart ; Koslow, Ingrid ; Fujito, Kenji ; Ohta, Hiroaki ; DenBaars, Steven P. ; Nakamura, Shuji. / 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique. In: Applied Physics Express. 2010 ; Vol. 3, No. 10.
@article{ba2770141d4d49598fd348330317394e,
title = "30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique",
abstract = "The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7{\%}. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.",
author = "Yuji Zhao and Junichi Sonoda and Pan, {Chih Chien} and Stuart Brinkley and Ingrid Koslow and Kenji Fujito and Hiroaki Ohta and DenBaars, {Steven P.} and Shuji Nakamura",
year = "2010",
month = "10",
doi = "10.1143/APEX.3.102101",
language = "English (US)",
volume = "3",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "10",

}

TY - JOUR

T1 - 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique

AU - Zhao, Yuji

AU - Sonoda, Junichi

AU - Pan, Chih Chien

AU - Brinkley, Stuart

AU - Koslow, Ingrid

AU - Fujito, Kenji

AU - Ohta, Hiroaki

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/10

Y1 - 2010/10

N2 - The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.

AB - The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.

UR - http://www.scopus.com/inward/record.url?scp=78549255552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78549255552&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.102101

DO - 10.1143/APEX.3.102101

M3 - Article

AN - SCOPUS:78549255552

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 10

M1 - 102101

ER -