30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique

Yuji Zhao, Junichi Sonoda, Chih Chien Pan, Stuart Brinkley, Ingrid Koslow, Kenji Fujito, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura

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Abstract

The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.

Original languageEnglish (US)
Article number102101
JournalApplied Physics Express
Volume3
Issue number10
DOIs
StatePublished - Oct 1 2010
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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