30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique

Yuji Zhao; Junichi Sonoda; Chih Chien Pan; Stuart Brinkley; Ingrid Koslow; Kenji Fujito; Hiroaki Ohta; Steven P. DenBaars; Shuji Nakamura

doi:10.1143/APEX.3.102101

30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique

Yuji Zhao, Junichi Sonoda, Chih Chien Pan, Stuart Brinkley, Ingrid Koslow, Kenji Fujito, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.

Original language	English (US)
Article number	102101
Journal	Applied Physics Express
Volume	3
Issue number	10
DOIs	https://doi.org/10.1143/APEX.3.102101
State	Published - Oct 2010
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "30-mW-class high-power and high-efficiency blue semipolar (10{\=1}{\=1}) InGaN/GaN light-emitting diodes obtained by backside roughening technique",

abstract = "The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (10{\=1}{\=1}) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.",

author = "Yuji Zhao and Junichi Sonoda and Pan, {Chih Chien} and Stuart Brinkley and Ingrid Koslow and Kenji Fujito and Hiroaki Ohta and DenBaars, {Steven P.} and Shuji Nakamura",

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doi = "10.1143/APEX.3.102101",

language = "English (US)",

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journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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AU - Zhao, Yuji

AU - Sonoda, Junichi

AU - Pan, Chih Chien

AU - Brinkley, Stuart

AU - Koslow, Ingrid

AU - Fujito, Kenji

AU - Ohta, Hiroaki

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/10

Y1 - 2010/10

N2 - The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (101̄1̄) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.

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30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique

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