3-d tcad monte carlo device simulator: State-of-the-art finfet simulation

Gabriela F. Furtado, Vinícius V.A. Camargo, Dragica Vasileska, Gilson I. Wirth

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical modeling of FinFETs. The simulator was developed to consider variability effects properly and to be able to study deeply scaled devices operating in the ballistic and quasi-ballistic regimes. The impact of random dopants and trapped charges in the die-lectric is considered by treating electron-electron and electron-ion interactions in real-space. Metal gate granularity is in-cluded through the gate work function variation. The capability to evaluate these effects in nanometer 3D devices makes the pre-sented simulator unique, thus advancing the state-of-the-art. The phonon scattering mechanisms, used to model the transport of electrons in pure silicon material system, were validated by comparing simulated drift velocities with available experimental data. The proper behavior of the device simulator is dis-played in a series of studies of the electric potential in the device, the electron density, the carrier's energy and velocity, and the Id-Vg and Id-Vd curves.

Original languageEnglish (US)
JournalJournal of Integrated Circuits and Systems
Volume16
Issue number2
DOIs
StatePublished - Aug 23 2021

Keywords

  • Fin-FETs
  • Monte Carlo Method
  • TCAD Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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