3-D simulation of geometrical variations impact on nanoscale FinFETs

Shimeng Yu, Yuning Zhao, Yuncheng Song, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations such as line edge roughness (LER) and oxide thickness fluctuations (OTF). A full 3-D statistical simulation is presented to investigate the impact of geometrical variations on the FinFETs performance. In this work, roughness is introduced by a Fourier analysis of the power spectrum of Gaussian autocorrelation function. The influence of different geometrical variation sources is compared and summarized. The results shows that FinFETs performance is most sensitive to the fin LER, which causes a remarkable shift and fluctuations in threshold voltage, drain induced barrier lower effect (DIBL) and leakage current. The impact of gate LER follows that of fin LER. The simulation also suggests quantum confinement effect accounts for the aggressive fluctuations due to fin LER.

Original languageEnglish (US)
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages408-411
Number of pages4
DOIs
StatePublished - Dec 1 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Yu, S., Zhao, Y., Song, Y., Du, G., Kang, J., Han, R., & Liu, X. (2008). 3-D simulation of geometrical variations impact on nanoscale FinFETs. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 408-411). [4734551] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734551