3-D Monte Carlo device simulator for variability modeling of p-MOSFETs

Vinicius V.A. Camargo, Alan C.J. Rossetto, Dragica Vasileska, Gilson I. Wirth

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A device simulator for p-MOSFETs, based on the Monte Carlo method for the solution of the Boltzmann transport equation, was developed, and results and implementation challenges are presented and discussed in detail in this paper. By using a Monte Carlo device simulator (MCDS), it is possible to consider effects that affect state-of-the-art devices that cannot be adequately considered using other methods (drift–diffusion, hydrodynamic, etc.). Novel feature of the simulator is that it treats hole–hole and hole–impurity interactions in real space using particle–particle–particle–mesh coupling method, allowing the simulator to account for random dopant fluctuation and charged traps, responsible for random telegraph noise and bias temperature instability, while having a small computational cost enabling statistical simulations. The MCDS shows excellent agreement between experimental data for the hole drift velocity versus electric field and low-field hole mobility versus doping density.

Original languageEnglish (US)
Pages (from-to)668-676
Number of pages9
JournalJournal of Computational Electronics
Issue number2
StatePublished - Jun 1 2020


  • Device simulation
  • Ensemble Monte Carlo
  • Real-space treatment of the hole–hole and hole–ion interactions
  • Semiconductor device
  • p-MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


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