@article{1ab538ed73864d32aa1384f26564d95f,
title = "2D MoS2-Based Threshold Switching Memristor for Artificial Neuron",
abstract = "In this work, we use a two-terminal 2D MoS2-based memristive device to emulate an artificial neuron. The Au/MoS2/Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 106, originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.",
keywords = "2D material, LIF neuron, MoS₂, SNN, TSM",
author = "Durjoy Dev and Adithi Krishnaprasad and Shawkat, {Mashiyat S.} and Zhezhi He and Sonali Das and Deliang Fan and Chung, {Hee Suk} and Yeonwoong Jung and Tania Roy",
note = "Funding Information: Manuscript received March 16, 2020; revised April 4, 2020; accepted April 13, 2020. Date of publication April 16, 2020; date of current version May 21, 2020. This work was supported in part by the NSF CAREER Award under Grant NSF-ECCS-1845331 and in part by the BAE Systems under Grant 1020180. The review of this letter was arranged by Editor D. Kuzum. (Corresponding author: Tania Roy.) Durjoy Dev, Adithi Krishnaprasad, Mashiyat S. Shawkat, and Sonali Das are with the Nanoscience Technology Center, University of Central Florida, Orlando, FL 32826 USA, and also with the Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32826 USA. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2020",
month = jun,
day = "1",
doi = "10.1109/LED.2020.2988247",
language = "English (US)",
volume = "41",
pages = "936--939",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}