Abstract
In this work, we use a two-terminal 2D MoS2-based memristive device to emulate an artificial neuron. The Au/MoS2/Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 106, originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.
Original language | English (US) |
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Article number | 9069258 |
Pages (from-to) | 936-939 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1 2020 |
Keywords
- 2D material
- LIF neuron
- MoS₂
- SNN
- TSM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering