2D Monte Carlo simulation of hole and electron transport in strained Si

Gabriele F. Formicone, Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)167-171
Number of pages5
JournalVLSI Design
Volume6
Issue number1-4
StatePublished - 1998

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Monte Carlo simulation
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

2D Monte Carlo simulation of hole and electron transport in strained Si. / Formicone, Gabriele F.; Vasileska, Dragica; Ferry, David K.

In: VLSI Design, Vol. 6, No. 1-4, 1998, p. 167-171.

Research output: Contribution to journalArticle

Formicone, GF, Vasileska, D & Ferry, DK 1998, '2D Monte Carlo simulation of hole and electron transport in strained Si', VLSI Design, vol. 6, no. 1-4, pp. 167-171.
Formicone, Gabriele F. ; Vasileska, Dragica ; Ferry, David K. / 2D Monte Carlo simulation of hole and electron transport in strained Si. In: VLSI Design. 1998 ; Vol. 6, No. 1-4. pp. 167-171.
@article{89a939f2f89541eb9f321580f51bb154,
title = "2D Monte Carlo simulation of hole and electron transport in strained Si",
author = "Formicone, {Gabriele F.} and Dragica Vasileska and Ferry, {David K.}",
year = "1998",
language = "English (US)",
volume = "6",
pages = "167--171",
journal = "VLSI Design",
issn = "1065-514X",
publisher = "Hindawi Publishing Corporation",
number = "1-4",

}

TY - JOUR

T1 - 2D Monte Carlo simulation of hole and electron transport in strained Si

AU - Formicone, Gabriele F.

AU - Vasileska, Dragica

AU - Ferry, David K.

PY - 1998

Y1 - 1998

UR - http://www.scopus.com/inward/record.url?scp=11544332228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11544332228&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:11544332228

VL - 6

SP - 167

EP - 171

JO - VLSI Design

JF - VLSI Design

SN - 1065-514X

IS - 1-4

ER -