2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused by the S-shape behavior of experimental J-V curves of standard interdigitated back contact cells can be recovered by making small openings in the intrinsic buffer layer. The small openings in the buffer layer also substantially reduce the influence of the relative dimensions of the silicon strips as when compared to cells with a continuous buffer layer.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages1390-1394
Number of pages5
DOIs
StatePublished - Dec 20 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Herasimenka, S., Ghosh, K., Bowden, S., & Honsberg, C. (2010). 2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 1390-1394). [5614394] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614394