TY - GEN
T1 - 2D Grating Pitch Mapping of a through Silicon Via (TSV) and Solder Ball Interconnect Region Using Laser Diffraction
T2 - 66th IEEE Electronic Components and Technology Conference, ECTC 2016
AU - Houghton, Todd
AU - Saxon, Michael
AU - Song, Zeming
AU - Nyugen, Hoa
AU - Jiang, Hanqing
AU - Yu, Hongbin
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/16
Y1 - 2016/8/16
N2 - Planar Strain mapping of interconnects, such as Ball Grid Arrays (BGA) and Through-Silicon Vias (TSVs), is an important step in the development and testing of electronics packages, as excessive strain can lead to device failure. Today, the two most widely adopted methods of experimental strain field measurement, Digital Image Correlation and Moiré Interferometry, encounter limitations when the average strain magnitude drops below 1μm on thermally loaded samples. DIC provides only limited fields of view and increases measurement complexity, while Moiré Interferometry suffers from resolution near material interfaces. If well bonded to a surface, changes in periodicity of a thin diffraction grating can be strongly dependent on the strain field. The local grating periodicity, can then be measured using laser diffraction. We present a means of mapping the pitch of a grating bonded to the surface of a through-silicon via interconnect in two dimensions over a wide field of view, with a high degree of repeatability at room and elevated temperature.
AB - Planar Strain mapping of interconnects, such as Ball Grid Arrays (BGA) and Through-Silicon Vias (TSVs), is an important step in the development and testing of electronics packages, as excessive strain can lead to device failure. Today, the two most widely adopted methods of experimental strain field measurement, Digital Image Correlation and Moiré Interferometry, encounter limitations when the average strain magnitude drops below 1μm on thermally loaded samples. DIC provides only limited fields of view and increases measurement complexity, while Moiré Interferometry suffers from resolution near material interfaces. If well bonded to a surface, changes in periodicity of a thin diffraction grating can be strongly dependent on the strain field. The local grating periodicity, can then be measured using laser diffraction. We present a means of mapping the pitch of a grating bonded to the surface of a through-silicon via interconnect in two dimensions over a wide field of view, with a high degree of repeatability at room and elevated temperature.
KW - Diffraction
KW - Grating
KW - Laser
KW - Strain
KW - TSV
UR - http://www.scopus.com/inward/record.url?scp=84987820352&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84987820352&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2016.309
DO - 10.1109/ECTC.2016.309
M3 - Conference contribution
AN - SCOPUS:84987820352
T3 - Proceedings - Electronic Components and Technology Conference
SP - 2222
EP - 2227
BT - Proceedings - ECTC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 31 May 2016 through 3 June 2016
ER -