200 nm deep ultraviolet photodetectors based on AlN

J. Li, Z. Y. Fan, R. Dahal, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

147 Scopus citations

Abstract

High quality AlN epilayers were grown on sapphire substrates by metal organic vapor deposition and exploited as active deep ultraviolet (DUV) optoelectronic materials through the demonstration of AlN metal-semiconductor- metal (MSM) photodetectors. DUV photodetectors with peak responsivity at 200 nm with a very sharp cutoff wavelength at 207 nm have been attained. The AlN MSM photodetectors are shown to possess outstanding features that are direct attributes of the fundamental properties of AlN, including extremely low dark current, high breakdown voltage, and high DUV to visible rejection ratio and high responsivity. The results demonstrate the high promise of AlN as an active material for DUV device applications.

Original languageEnglish (US)
Article number213510
JournalApplied Physics Letters
Volume89
Issue number21
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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