Abstract

The purpose of this work is to propose a methodology to compute 1/f noise in MOS transistors under cyclo-stationary operation using the standard BSIM4 noise model. The proposed technique relies on a transient simulation, prior to the noise simulation, in which the average carrier quasi Fermi level in the channel is computed. Using this average quasi Fermi level and an energy distribution of traps, flicker noise parameters—NOIA, NOIB and NOIC—are recalculated in order to account for cyclo-stationary conditions. With these recalculated parameters, a noise simulation, using standard BSIM4 noise model, is performed. Simulation results are presented and compared to experimental data available in the literature, indicating the validity of the method.

Original languageEnglish (US)
Pages (from-to)15-20
Number of pages6
JournalJournal of Computational Electronics
Volume14
Issue number1
DOIs
StatePublished - Feb 21 2015

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Keywords

  • 1/f noise
  • CMOS
  • Flicker noise
  • MOSFET
  • Noise reduction
  • SPICE simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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