1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Calli M. Campbell, Yuan Zhao, Ernesto Suarez, Mathieu Boccard, Xin Hao Zhao, Zhao Yu He, Preston T. Webster, Maxwell B. Lassise, Shane Johnson, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Heterojunctions
Solar cells
Indium
Photoluminescence
Energy gap
Spectroscopic ellipsometry
Tin oxides
Amorphous silicon
Molecular beam epitaxy
Conversion efficiency
Electrodes
indium tin oxide

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Campbell, C. M., Zhao, Y., Suarez, E., Boccard, M., Zhao, X. H., He, Z. Y., ... Zhang, Y-H. (2018). 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366018

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. / Campbell, Calli M.; Zhao, Yuan; Suarez, Ernesto; Boccard, Mathieu; Zhao, Xin Hao; He, Zhao Yu; Webster, Preston T.; Lassise, Maxwell B.; Johnson, Shane; Holman, Zachary; Zhang, Yong-Hang.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Campbell, CM, Zhao, Y, Suarez, E, Boccard, M, Zhao, XH, He, ZY, Webster, PT, Lassise, MB, Johnson, S, Holman, Z & Zhang, Y-H 2018, 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366018
Campbell CM, Zhao Y, Suarez E, Boccard M, Zhao XH, He ZY et al. 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366018
Campbell, Calli M. ; Zhao, Yuan ; Suarez, Ernesto ; Boccard, Mathieu ; Zhao, Xin Hao ; He, Zhao Yu ; Webster, Preston T. ; Lassise, Maxwell B. ; Johnson, Shane ; Holman, Zachary ; Zhang, Yong-Hang. / 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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AU - He, Zhao Yu

AU - Webster, Preston T.

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AB - MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

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