MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781509056057
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017


Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of '1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications'. Together they form a unique fingerprint.

Cite this