@inproceedings{77684152e37448d18fd70c095906d2cf,
title = "1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications",
abstract = "MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.",
author = "Campbell, {Calli M.} and Yuan Zhao and Ernesto Suarez and Mathieu Boccard and Zhao, {Xin Hao} and He, {Zhao Yu} and Webster, {Preston T.} and Lassise, {Maxwell B.} and Shane Johnson and Zachary Holman and Yong-Hang Zhang",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366018",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3245--3249",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}