1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Calli M. Campbell; Yuan Zhao; Ernesto Suarez; Mathieu Boccard; Xin Hao Zhao; Zhao Yu He; Preston T. Webster; Maxwell B. Lassise; Shane Johnson; Zachary Holman; Yong-Hang Zhang

doi:10.1109/PVSC.2016.7749622

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Calli M. Campbell, Yuan Zhao, Ernesto Suarez, Mathieu Boccard, Xin Hao Zhao, Zhao Yu He, Preston T. Webster, Maxwell B. Lassise, Shane Johnson, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	411-414
Number of pages	4
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749622
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2016.7749622

Cite this

Campbell, C. M., Zhao, Y., Suarez, E., Boccard, M., Zhao, X. H., He, Z. Y., Webster, P. T., Lassise, M. B., Johnson, S., Holman, Z., & Zhang, Y-H. (2016). 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 411-414). [7749622] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749622

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. / Campbell, Calli M.; Zhao, Yuan; Suarez, Ernesto et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 411-414 7749622.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Campbell, CM, Zhao, Y, Suarez, E, Boccard, M, Zhao, XH, He, ZY, Webster, PT, Lassise, MB, Johnson, S , Holman, Z & Zhang, Y-H 2016, 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749622, Institute of Electrical and Electronics Engineers Inc., pp. 411-414, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749622

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abstract = "MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.",

author = "Campbell, {Calli M.} and Yuan Zhao and Ernesto Suarez and Mathieu Boccard and Zhao, {Xin Hao} and He, {Zhao Yu} and Webster, {Preston T.} and Lassise, {Maxwell B.} and Shane Johnson and Zachary Holman and Yong-Hang Zhang",

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AU - Suarez, Ernesto

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AU - Zhao, Xin Hao

AU - He, Zhao Yu

AU - Webster, Preston T.

AU - Lassise, Maxwell B.

AU - Johnson, Shane

AU - Holman, Zachary

AU - Zhang, Yong-Hang

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N2 - MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

AB - MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

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1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

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