Abstract

MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages411-414
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Heterojunctions
Solar cells
Indium
Photoluminescence
Energy gap
Spectroscopic ellipsometry
Tin oxides
Amorphous silicon
Molecular beam epitaxy
Conversion efficiency
Electrodes

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Campbell, C. M., Zhao, Y., Suarez, E., Boccard, M., Zhao, X. H., He, Z. Y., ... Zhang, Y-H. (2016). 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 411-414). [7749622] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749622

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. / Campbell, Calli M.; Zhao, Yuan; Suarez, Ernesto; Boccard, Mathieu; Zhao, Xin Hao; He, Zhao Yu; Webster, Preston T.; Lassise, Maxwell B.; Johnson, Shane; Holman, Zachary; Zhang, Yong-Hang.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 411-414 7749622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Campbell, CM, Zhao, Y, Suarez, E, Boccard, M, Zhao, XH, He, ZY, Webster, PT, Lassise, MB, Johnson, S, Holman, Z & Zhang, Y-H 2016, 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749622, Institute of Electrical and Electronics Engineers Inc., pp. 411-414, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749622
Campbell CM, Zhao Y, Suarez E, Boccard M, Zhao XH, He ZY et al. 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 411-414. 7749622 https://doi.org/10.1109/PVSC.2016.7749622
Campbell, Calli M. ; Zhao, Yuan ; Suarez, Ernesto ; Boccard, Mathieu ; Zhao, Xin Hao ; He, Zhao Yu ; Webster, Preston T. ; Lassise, Maxwell B. ; Johnson, Shane ; Holman, Zachary ; Zhang, Yong-Hang. / 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 411-414
@inproceedings{ec5a7cbfd0734b3397d344ac4799b3b0,
title = "1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications",
abstract = "MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40{\%}. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13{\%} Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.",
author = "Campbell, {Calli M.} and Yuan Zhao and Ernesto Suarez and Mathieu Boccard and Zhao, {Xin Hao} and He, {Zhao Yu} and Webster, {Preston T.} and Lassise, {Maxwell B.} and Shane Johnson and Zachary Holman and Yong-Hang Zhang",
year = "2016",
month = "11",
day = "18",
doi = "10.1109/PVSC.2016.7749622",
language = "English (US)",
volume = "2016-November",
pages = "411--414",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

AU - Campbell, Calli M.

AU - Zhao, Yuan

AU - Suarez, Ernesto

AU - Boccard, Mathieu

AU - Zhao, Xin Hao

AU - He, Zhao Yu

AU - Webster, Preston T.

AU - Lassise, Maxwell B.

AU - Johnson, Shane

AU - Holman, Zachary

AU - Zhang, Yong-Hang

PY - 2016/11/18

Y1 - 2016/11/18

N2 - MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

AB - MgxCdi-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe /MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

UR - http://www.scopus.com/inward/record.url?scp=85003443918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003443918&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749622

DO - 10.1109/PVSC.2016.7749622

M3 - Conference contribution

VL - 2016-November

SP - 411

EP - 414

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -