1.54-μm photoluminescence from Er-implanted GaN and AlN

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, Nathan Newman, M. Rubin, T. Fu, J. M. Zavada

Research output: Contribution to journalArticle

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Abstract

An experimental results on the observation of optical emission spectrum near 1.54 μm from Er-implanted GaN/GaAs, AlN/GaAs, and GaN/sapphire is measured at 6, 77, and 300k is reported. For GaN/sapphire the optical activity is nearly as intense at room temperature as it is at 6 or 77 K, and discrete transitions among Stark levels of the first excited and the ground state are still resolved at room temperature. The depth distribution of implanted Er does not change with annealing up to 900 °C in GaN or AlN, as it does in other materials of narrower bang gap.

Original languageEnglish (US)
Pages (from-to)992-994
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number8
DOIs
StatePublished - Jan 1 1994
Externally publishedYes

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sapphire
photoluminescence
optical activity
room temperature
light emission
optical spectrum
emission spectra
annealing
ground state

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wilson, R. G., Schwartz, R. N., Abernathy, C. R., Pearton, S. J., Newman, N., Rubin, M., ... Zavada, J. M. (1994). 1.54-μm photoluminescence from Er-implanted GaN and AlN. Applied Physics Letters, 65(8), 992-994. https://doi.org/10.1063/1.112172

1.54-μm photoluminescence from Er-implanted GaN and AlN. / Wilson, R. G.; Schwartz, R. N.; Abernathy, C. R.; Pearton, S. J.; Newman, Nathan; Rubin, M.; Fu, T.; Zavada, J. M.

In: Applied Physics Letters, Vol. 65, No. 8, 01.01.1994, p. 992-994.

Research output: Contribution to journalArticle

Wilson, RG, Schwartz, RN, Abernathy, CR, Pearton, SJ, Newman, N, Rubin, M, Fu, T & Zavada, JM 1994, '1.54-μm photoluminescence from Er-implanted GaN and AlN', Applied Physics Letters, vol. 65, no. 8, pp. 992-994. https://doi.org/10.1063/1.112172
Wilson RG, Schwartz RN, Abernathy CR, Pearton SJ, Newman N, Rubin M et al. 1.54-μm photoluminescence from Er-implanted GaN and AlN. Applied Physics Letters. 1994 Jan 1;65(8):992-994. https://doi.org/10.1063/1.112172
Wilson, R. G. ; Schwartz, R. N. ; Abernathy, C. R. ; Pearton, S. J. ; Newman, Nathan ; Rubin, M. ; Fu, T. ; Zavada, J. M. / 1.54-μm photoluminescence from Er-implanted GaN and AlN. In: Applied Physics Letters. 1994 ; Vol. 65, No. 8. pp. 992-994.
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