1.54-μm photoluminescence from Er-implanted GaN and AlN

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, J. M. Zavada

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Abstract

We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.

Original languageEnglish (US)
Pages (from-to)992-994
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number8
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wilson, R. G., Schwartz, R. N., Abernathy, C. R., Pearton, S. J., Newman, N., Rubin, M., Fu, T., & Zavada, J. M. (1994). 1.54-μm photoluminescence from Er-implanted GaN and AlN. Applied Physics Letters, 65(8), 992-994. https://doi.org/10.1063/1.112172