1.54-μm photoluminescence from Er-implanted GaN and AlN

R. G. Wilson; R. N. Schwartz; C. R. Abernathy; S. J. Pearton; N. Newman; M. Rubin; T. Fu; J. M. Zavada

doi:10.1063/1.112172

1.54-μm photoluminescence from Er-implanted GaN and AlN

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

191 Scopus citations

Abstract

We report the observation of the 1.54-μm luminescence of optically excited Er³⁺ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the ⁴I_13/2 first excited multiplet and the ⁴I_15/2 ground multiplet.

Original language	English (US)
Pages (from-to)	992-994
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	8
DOIs	https://doi.org/10.1063/1.112172
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "1.54-μm photoluminescence from Er-implanted GaN and AlN",

abstract = "We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.",

author = "Wilson, {R. G.} and Schwartz, {R. N.} and Abernathy, {C. R.} and Pearton, {S. J.} and N. Newman and M. Rubin and T. Fu and Zavada, {J. M.}",

year = "1994",

doi = "10.1063/1.112172",

language = "English (US)",

volume = "65",

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journal = "Applied Physics Letters",

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T1 - 1.54-μm photoluminescence from Er-implanted GaN and AlN

AU - Wilson, R. G.

AU - Schwartz, R. N.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Newman, N.

AU - Rubin, M.

AU - Fu, T.

AU - Zavada, J. M.

PY - 1994

Y1 - 1994

N2 - We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.

AB - We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.

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VL - 65

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EP - 994

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

1.54-μm photoluminescence from Er-implanted GaN and AlN

Abstract

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