1.3-micron GaAsSb/GaAs VCSELs

P. Dowd, Shane Johnson, S. A. Chaparro, S. A. Feld, M. P. Horning, M. Adamcyk, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages135-139
Number of pages5
Volume5248
StatePublished - 2003
EventSemiconductor Optoelectronic Devices for Lightwave Communication - Orlando, FL, United States
Duration: Sep 8 2003Sep 10 2003

Other

OtherSemiconductor Optoelectronic Devices for Lightwave Communication
CountryUnited States
CityOrlando, FL
Period9/8/039/10/03

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Keywords

  • GaAsSb
  • Long wavelength
  • VCSEL

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Dowd, P., Johnson, S., Chaparro, S. A., Feld, S. A., Horning, M. P., Adamcyk, M., & Zhang, Y-H. (2003). 1.3-micron GaAsSb/GaAs VCSELs. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5248, pp. 135-139)