1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

X. Jin, S. Q. Yu, Yu Cao, D. Ding, J. B. Wang, N. Samal, Y. Sadofyev, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages69-70
Number of pages2
Volume1
StatePublished - 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

Other

Other2003 IEEE LEOS Annual Meeting Conference Proceedings
CountryUnited States
CityTUCSON, AZ
Period10/26/0310/30/03

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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