1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

X. Jin, S. Q. Yu, Yu Cao, D. Ding, J. B. Wang, N. Samal, Y. Sadofyev, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages69-70
Number of pages2
Volume1
StatePublished - 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

Other

Other2003 IEEE LEOS Annual Meeting Conference Proceedings
CountryUnited States
CityTUCSON, AZ
Period10/26/0310/30/03

Fingerprint

Cavity resonators
Linewidth
Light emitting diodes
Communication
Substrates
Temperature

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Jin, X., Yu, S. Q., Cao, Y., Ding, D., Wang, J. B., Samal, N., ... Zhang, Y-H. (2003). 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 1, pp. 69-70)

1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate. / Jin, X.; Yu, S. Q.; Cao, Yu; Ding, D.; Wang, J. B.; Samal, N.; Sadofyev, Y.; Johnson, Shane; Zhang, Yong-Hang.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 2003. p. 69-70.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jin, X, Yu, SQ, Cao, Y, Ding, D, Wang, JB, Samal, N, Sadofyev, Y, Johnson, S & Zhang, Y-H 2003, 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 1, pp. 69-70, 2003 IEEE LEOS Annual Meeting Conference Proceedings, TUCSON, AZ, United States, 10/26/03.
Jin X, Yu SQ, Cao Y, Ding D, Wang JB, Samal N et al. 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1. 2003. p. 69-70
Jin, X. ; Yu, S. Q. ; Cao, Yu ; Ding, D. ; Wang, J. B. ; Samal, N. ; Sadofyev, Y. ; Johnson, Shane ; Zhang, Yong-Hang. / 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 2003. pp. 69-70
@inproceedings{164d32a27c6b457284c100e5664b9aca,
title = "1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate",
abstract = "Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.",
author = "X. Jin and Yu, {S. Q.} and Yu Cao and D. Ding and Wang, {J. B.} and N. Samal and Y. Sadofyev and Shane Johnson and Yong-Hang Zhang",
year = "2003",
language = "English (US)",
volume = "1",
pages = "69--70",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

}

TY - GEN

T1 - 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

AU - Jin, X.

AU - Yu, S. Q.

AU - Cao, Yu

AU - Ding, D.

AU - Wang, J. B.

AU - Samal, N.

AU - Sadofyev, Y.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

AB - Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

UR - http://www.scopus.com/inward/record.url?scp=0345328215&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345328215&partnerID=8YFLogxK

M3 - Conference contribution

VL - 1

SP - 69

EP - 70

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -