1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

X. Jin; S. Q. Yu; Yu Cao; D. Ding; J. B. Wang; N. Samal; Y. Sadofyev; Shane Johnson; Yong-Hang Zhang

1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

X. Jin, S. Q. Yu, Yu Cao, D. Ding, J. B. Wang, N. Samal, Y. Sadofyev, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages	69-70
Number of pages	2
Volume	1
State	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003

Other

Other	2003 IEEE LEOS Annual Meeting Conference Proceedings
Country/Territory	United States
City	TUCSON, AZ
Period	10/26/03 → 10/30/03

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

@inproceedings{164d32a27c6b457284c100e5664b9aca,

title = "1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate",

abstract = "Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.",

author = "X. Jin and Yu, {S. Q.} and Yu Cao and D. Ding and Wang, {J. B.} and N. Samal and Y. Sadofyev and Shane Johnson and Yong-Hang Zhang",

year = "2003",

language = "English (US)",

volume = "1",

pages = "69--70",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

}

TY - GEN

T1 - 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

AU - Jin, X.

AU - Yu, S. Q.

AU - Cao, Yu

AU - Ding, D.

AU - Wang, J. B.

AU - Samal, N.

AU - Sadofyev, Y.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

AB - Bottom emitting 1.3 μm GaAsSb RCLEDS were demonstrated on GaAs that exhibit superior performance in spectral linewidth, beam shape, and characteristics temperature. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDS for optical data-communication modules.

UR - http://www.scopus.com/inward/record.url?scp=0345328215&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345328215&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0345328215

VL - 1

SP - 69

EP - 70

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

Abstract

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ASJC Scopus subject areas

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