12.4% efficient freestanding 30μm ultra-thin silicon solar cell using a-Si/c-Si heterostructure

Bhumika Chhabra, Robert L. Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

With 18 μs bulk lifetime and surface recombination velocity ∼ 84 cm/sec, we demonstrate an improved understanding of surface passivation properties and loss mechanisms in free-standing 30 μm ultra-thin silicon devices. It is demonstrated that even low quality silicon substrates can be used for fabrication of thin silicon solar cells without strict requirements of high bulk minority carrier lifetimes as required in thick solar cells. The use of a-Si/c-Si structure on very thin wafers allows low surface recombination velocities, low temperature processing and reduced structural and electronic interface defects, thus making them ideal for very thin, wafer-based solar cells.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages1325-1329
Number of pages5
DOIs
StatePublished - Dec 20 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Chhabra, B., Opila, R. L., & Honsberg, C. (2010). 12.4% efficient freestanding 30μm ultra-thin silicon solar cell using a-Si/c-Si heterostructure. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 1325-1329). [5614352] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614352