TY - GEN
T1 - 12.4% efficient freestanding 30μm ultra-thin silicon solar cell using a-Si/c-Si heterostructure
AU - Chhabra, Bhumika
AU - Opila, Robert L.
AU - Honsberg, Christiana
PY - 2010
Y1 - 2010
N2 - With 18 μs bulk lifetime and surface recombination velocity ∼ 84 cm/sec, we demonstrate an improved understanding of surface passivation properties and loss mechanisms in free-standing 30 μm ultra-thin silicon devices. It is demonstrated that even low quality silicon substrates can be used for fabrication of thin silicon solar cells without strict requirements of high bulk minority carrier lifetimes as required in thick solar cells. The use of a-Si/c-Si structure on very thin wafers allows low surface recombination velocities, low temperature processing and reduced structural and electronic interface defects, thus making them ideal for very thin, wafer-based solar cells.
AB - With 18 μs bulk lifetime and surface recombination velocity ∼ 84 cm/sec, we demonstrate an improved understanding of surface passivation properties and loss mechanisms in free-standing 30 μm ultra-thin silicon devices. It is demonstrated that even low quality silicon substrates can be used for fabrication of thin silicon solar cells without strict requirements of high bulk minority carrier lifetimes as required in thick solar cells. The use of a-Si/c-Si structure on very thin wafers allows low surface recombination velocities, low temperature processing and reduced structural and electronic interface defects, thus making them ideal for very thin, wafer-based solar cells.
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U2 - 10.1109/PVSC.2010.5614352
DO - 10.1109/PVSC.2010.5614352
M3 - Conference contribution
AN - SCOPUS:78650155334
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1325
EP - 1329
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -