1-Me-V-electron irradiation of GaInAsN cells

Sarah Kurtz, Richard King, K. M. Edmondson, D. J. Friedman, N. H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

GaInAsN cells are measured to retain 93±3% and 89±4% of their original efficiency after exposure to 5 × 1014 and 1 × 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by <1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1006-1009
Number of pages4
StatePublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period5/19/025/24/02

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Kurtz, S., King, R., Edmondson, K. M., Friedman, D. J., & Karam, N. H. (2002). 1-Me-V-electron irradiation of GaInAsN cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1006-1009)