1-Me-V-electron irradiation of GaInAsN cells

Sarah Kurtz; Richard King; K. M. Edmondson; D. J. Friedman; N. H. Karam

1-Me-V-electron irradiation of GaInAsN cells

Sarah Kurtz, Richard King, K. M. Edmondson, D. J. Friedman, N. H. Karam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaInAsN cells are measured to retain 93±3% and 89±4% of their original efficiency after exposure to 5 × 10¹⁴ and 1 × 10¹⁵ cm^-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by <1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	1006-1009
Number of pages	4
State	Published - 2002
Externally published	Yes
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: May 19 2002 → May 24 2002

Other

Other	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	5/19/02 → 5/24/02

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

@inproceedings{5b02fb638d024705a4f8f0e9806a2a04,

title = "1-Me-V-electron irradiation of GaInAsN cells",

abstract = "GaInAsN cells are measured to retain 93±3% and 89±4% of their original efficiency after exposure to 5 × 1014 and 1 × 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by <1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.",

author = "Sarah Kurtz and Richard King and Edmondson, {K. M.} and Friedman, {D. J.} and Karam, {N. H.}",

year = "2002",

language = "English (US)",

pages = "1006--1009",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - GEN

T1 - 1-Me-V-electron irradiation of GaInAsN cells

AU - Kurtz, Sarah

AU - King, Richard

AU - Edmondson, K. M.

AU - Friedman, D. J.

AU - Karam, N. H.

PY - 2002

Y1 - 2002

N2 - GaInAsN cells are measured to retain 93±3% and 89±4% of their original efficiency after exposure to 5 × 1014 and 1 × 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by <1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.

AB - GaInAsN cells are measured to retain 93±3% and 89±4% of their original efficiency after exposure to 5 × 1014 and 1 × 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by <1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.

UR - http://www.scopus.com/inward/record.url?scp=0036953689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036953689&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036953689

SP - 1006

EP - 1009

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

1-Me-V-electron irradiation of GaInAsN cells

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this